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Gotsmann
Bernd Gotsmann, Horgen CH
| Patent application number | Description | Published |
|---|---|---|
| 20080258577 | Microsystem and Method for Positioning a Second Element with Respect to a First Element in a Microsystem - A microsystem, comprising a first static element ( | 10-23-2008 |
| 20090073849 | HIGH DENSITY DATA STORAGE MEDIUM - A data storage system includes a read/write head having a tip connected to a resistive path locally exerting heat at the tip when an electrical current is applied; and a data storage medium from which information is reproduced by scanning a surface of the medium with a tip positioned in contact therewith, the medium comprising: a substrate; and a polymer recording surface within which data bit values are determined by the topographical state at the bit location, characterized in that the polymer contains thermally reversible crosslinkages. | 03-19-2009 |
Bernd W. Gotsmann, Rueschlikon CH
| Patent application number | Description | Published |
|---|---|---|
| 20100316960 | PATTERNING NANO-SCALE PATTERNS ON A FILM COMPRISING UNZIPPING POLYMER CHAINS - The invention concerns a method for patterning a surface of a material. A substrate having a polymer film thereon is provided. The polymer is a selectively reactive polymer (e.g. thermodynamically unstable): it is able to unzip upon suitable stimulation. A probe is used to create patterns on the film. During the patterning, the film is locally stimulated for unzipping polymer chains. Hence, a basic idea is to provide a stimulus to the polymeric material, which in turn spontaneously decomposes e.g. into volatile constituents. For example, the film is thermally stimulated in order to break a single bond in a polymer chain, which is sufficient to trigger the decomposition of the entire polymer chain. | 12-16-2010 |
Bernd W. Gotsmann, Switzerland CH
| Patent application number | Description | Published |
|---|---|---|
| 20110113517 | WEAR-LESS OPERATION OF A MATERIAL SURFACE WITH A SCANNING PROBE MICROSCOPE - A method and a scanning probe microscope (SPM) for scanning a surface of a material. The method and SPM have a cantilever sensor configured to exhibit both a first spring behavior and a second, stiffer spring behavior. While operating the SPM in contact mode, the sensor is scanned on the material surface and a first spring behavior of the sensor (e.g. a fundamental mode of flexure thereof) is excited by deflection of the sensor by the material surface. Also while operating the SPM in contact mode, excitation means are used to excite a second spring behavior of the sensor at a resonance frequency thereof (e.g. one or more higher-order resonant modes) of the cantilever sensor to modulate an interaction of the sensor and the material surface and thereby reduce the wearing of the material surface. | 05-12-2011 |
Bernd Walter Gotsmann, Horgen CH
| Patent application number | Description | Published |
|---|---|---|
| 20080205253 | HIGH DENSITY DATA STORAGE MEDIUM, METHOD AND DEVICE - A composition of matter for the recording medium of nanometer scale thermo-mechanical information storage devices and a nanometer scale thermo-mechanical information storage device. The composition includes: one or more polyaryletherketone copolymers, each of the one or more polyaryletherketone copolymers comprising (a) a first monomer including an aryl ether ketone and (b) a second monomer including an aryl ether ketone and a first phenylethynyl moiety, each of the one or more polyaryletherketone copolymers having two terminal ends, each terminal end having a phenylethynyl moiety the same as or different from the first phenylethynyl moiety. The one or more polyaryletherketone copolymers are thermally cured and the resulting cross-linked polyaryletherketone resin used as the recording layer in an atomic force data storage device. | 08-28-2008 |
| 20080219135 | METHOD FOR HIGH DENSITY DATA STORAGE AND IMAGING - An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging. | 09-11-2008 |
| 20100284264 | HIGH DENSITY DATA STORAGE MEDIUM, METHOD AND DEVICE - A composition of matter for the recording medium of nanometer scale thermo-mechanical information storage devices and a nanometer scale thermo-mechanical information storage device. The composition includes: one or more polyaryletherketone copolymers, each of the one or more polyaryletherketone copolymers comprising (a) a first monomer including an aryl ether ketone and (b) a second monomer including an aryl ether ketone and a first phenylethynyl moiety, each of the one or more polyaryletherketone copolymers having two terminal ends, each terminal end having a phenylethynyl moiety the same as or different from the first phenylethynyl moiety. The one or more polyaryletherketone copolymers are thermally cured and the resulting cross-linked polyaryletherketone resin used as the recording layer in an atomic force data storage device. | 11-11-2010 |
Bernd Walter Gotsmann, Horgan CH
| Patent application number | Description | Published |
|---|---|---|
| 20110128840 | HIGH DENSITY DATA STORAGE MEDIUM, METHOD AND DEVICE - A composition of matter for the recording medium of nanometer scale thermo-mechanical information storage devices and a nanometer scale thermo-mechanical information storage device. The composition includes: one or more polyaryletherketone polymers, each of the one or more polyaryletherketone polymers having two terminal ends, each terminal end having two or more phenylethynyl moieties. The one or more polyaryletherketone polymers are thermally cured and the resulting cross-linked polyaryletherketone resin used as the recording layers in atomic force data storage devices. | 06-02-2011 |