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| 20110155020 | SYSTEM AND METHOD FOR MAKING CEMENT AND CEMENT DERIVED THEREFROM - Integrated cement production systems and methods implementing the systems are disclosed, where the integrated cement production systems include a burnable fuel supply subsystem, a cement raw material supply subsystem, a kiln subsystem and a cement clinker composition storage subsystem. The burnable fuel supply subsystem is adapted to receive one or a plurality of used and/or unused healthcare materials. The burnable fuel supply subsystem can feed the materials directly into the kiln subsystem, can convert the materials into different form and feed the different form to the kiln subsystem or feed a combination of the materials, different forms and optionally conventional fuels to the kiln subsystem. | 06-30-2011 |
| 20110155029 | METHOD AND SYSTEM OF MAKING A BURNABLE FUEL - Methods and systems are disclosed for direct conversion of a used or waste material into a burnable fuel and to burnable fuels derived therefrom. | 06-30-2011 |
| 20110209392 | COATED PARTICULATE AND SHAPED FUELS AND METHODS FOR MAKING AND USING SAME - Methods and system are disclosed for making coated burnable fuels from source materials and to the coated burnable fuels derived therefrom. | 09-01-2011 |
| 20110303666 | SECURE CONTAINERS HAVING UNIDIRECTIONAL APPARATUSES FOR USED OR UNUSED MATERIALS AND METHODS FOR MAKING AND USING SAME - Secure containers are disclosed for disposal of unused, experimental, and/or expired pharmaceuticals, nutraceuticals, veterinary medicines, and/or similar materials, where the containers include at least one unidirectional apparatus for depositing materials into an interior of the container, while resisting normal attempts at retrieval of deposited materials. Methods are also disclosed for making and using the secure containers including a unidirectional member supporting deposition of materials into an interior of the container, while resisting withdrawal of deposited materials. | 12-15-2011 |
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| 20110139235 | CADMIUM TELLURIDE THIN FILM PHOTVOLTAIC DEVICES AND METHODS OF MANUFACTURING THE SAME - Methods for manufacturing a cadmium telluride based thin film photovoltaic device are generally disclosed. The method can include sputtering a resistive transparent layer on a transparent conductive oxide layer from an alloy target including zinc from about 5% by weight and about 33% by weight and tin. The method can also include forming a cadmium sulfide layer on the resistive transparent layer, forming a cadmium telluride layer on the cadmium sulfide layer, and forming a back contact layer on the cadmium telluride layer. Cadmium telluride thin film photovoltaic devices are also generally disclosed including a resistive transparent layer having a mixture of zinc oxide and tin oxide having a zinc oxide concentration between about 5% and about 33% by mole fraction. | 06-16-2011 |
| 20110139245 | THIN FILM INTERLAYER IN CADMIUM TELLURIDE THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MANUFACTURING THE SAME - A cadmium telluride thin film photovoltaic device is provided having a thin film interlayer positioned between a cadmium sulfide layer and a cadmium telluride layer. The thin film interlayer can be an oxide thin film layer (e.g., an amorphous silica layer, a cadmium stannate layer, a zinc stannate layer, etc.) or a nitride film, and can act as a chemical barrier at the p-n junction to inhibit ion diffusion between the layers. The device can include a transparent conductive layer on a glass superstrate, a cadmium sulfide layer on the transparent conductive layer, a thin film interlayer on the cadmium sulfide layer, a cadmium telluride layer on the thin film interlayer, and a back contact on the cadmium telluride layer. Methods are also provided of manufacturing such devices. | 06-16-2011 |
| 20110244251 | Methods Of Forming A Conductive Transparent Oxide Film Layer For Use In A Cadmium Telluride Based Thin Film Photovoltaic Device - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 10° C. to about 100° C. A cap layer including cadmium sulfide can be deposited directly on the transparent conductive oxide layer. The transparent conductive oxide layer can be annealed at an anneal temperature from about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. An intermediate substrate is also generally provided for use to manufacture a thin film photovoltaic device. | 10-06-2011 |
| 20110259732 | METHODS FOR HIGH-RATE SPUTTERING OF A COMPOUND SEMICONDUCTOR ON LARGE AREA SUBSTRATES - Methods are generally provided for sputtering thin films on individual substrates. Individual substrates can be conveyed into a vacuum chamber to draw a sputtering pressure that is less than about 50 mTorr. Then, the individual substrates can be conveyed into a sputtering chamber and past a planar magnetron continuously sputtering a target by an ionized gas at the sputtering pressure such that a thin film is formed on a surface of the individual substrate. The target is subjected to a high frequency power having a frequency from about 400 kHz to about 4 MHz at power levels of greater than about 1 kW. In one particular embodiment, the method can be generally directed to sputtering thin films on individual substrates defining a surface having a surface area of about 1000 cm | 10-27-2011 |
| 20110265868 | CADMIUM SULFIDE LAYERS FOR USE IN CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Cadmium telluride thin film photovoltaic devices are generally provided. The device can include a substrate, a transparent conductive oxide layer on the substrate; a resistive transparent buffer layer on the transparent conductive oxide layer; a cadmium sulfide layer on the resistive transparent buffer layer; a cadmium telluride layer on the cadmium sulfide layer; and, a back contact layer on the cadmium telluride layer. The cadmium sulfide layer can include oxygen in a molar percentage greater than 0% to about 20%. In one particular embodiment, a second cadmium sulfide layer substantially free from oxygen can be positioned between the cadmium sulfide layer and the cadmium telluride layer. | 11-03-2011 |
| 20110265874 | CADMIUM SULFIDE LAYERS FOR USE IN CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Methods are generally provided for forming a cadmium sulfide layer on a substrate. In one particular embodiment, the method can include sputtering a cadmium sulfide layer on a substrate in a sputtering atmosphere comprising an inorganic fluorine source gas. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. | 11-03-2011 |
| 20110266141 | SYSTEM AND METHODS FOR HIGH-RATE CO-SPUTTERING OF THIN FILM LAYERS ON PHOTOVOLTAIC MODULE SUBSTRATES - Systems and methods for deposition of a thin film layer on photovoltaic (PV) module substrates are generally provided. The system can include a sputtering chamber configured to receive the substrates, at least two targets positioned within the sputtering chamber, and an independent power source connected to each target. Each target can be positioned within the sputtering chamber to face the substrates such that the targets are simultaneously sputtered to supply source material to a plasma field for forming a thin film layer on a surface of the substrates. The multiple targets can also be positioned such that a facing axis extending perpendicularly from a center of each target converges at a point on the surface of the substrate. | 11-03-2011 |
| 20120003784 | METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE - Methods for forming a conductive oxide layer on a substrate are provided. The method can include sputtering a transparent conductive oxide layer (“TCO layer”) on a substrate from a target (e.g., including cadmium stannate) at a sputtering temperature of about 10° C. to about 100° C. The TCO layer can then be annealed in an anneal temperature comprising cadmium at an annealing temperature of about 500° C. to about 700° C. The method of forming the TCO layer can be used in a method for manufacturing a cadmium telluride based thin film photovoltaic device, further including forming a cadmium sulfide layer over the transparent conductive oxide layer and forming a cadmium telluride layer over the cadmium sulfide layer. | 01-05-2012 |
| 20120021536 | METHOD AND SYSTEM FOR APPLICATION OF AN INSULATING DIELECTRIC MATERIAL TO PHOTOVOLTAIC MODULE SUBSTRATES - A method and related system are provided for depositing a dielectric material into voids in one or more of the semiconductor material layers of a photovoltaic (PV) module substrate. A first side of the substrate is exposed to a light source such that light is transmitted through the substrate and any voids in the semiconductor material layers on the opposite side of the substrate. The light transmitted through the voids is detected and a printer is registered to the pattern of detected light to print a dielectric material and fill the voids. | 01-26-2012 |
| 20120024361 | ANISOTROPIC CONDUCTIVE LAYER AS A BACK CONTACT IN THIN FILM PHOTOVOLTAIC DEVICES - Thin film photovoltaic devices are generally provided. The device can include a transparent conductive oxide layer on a glass substrate, an n-type thin film layer on the transparent conductive layer, and a p-type thin film layer on the n-type layer. The n-type thin film layer and the p-type thin film layer form a p-n junction. An anisotropic conductive layer is applied on the p-type thin film layer, and includes a polymeric binder and a plurality of conductive particles. A metal contact layer can then be positioned on the anisotropic conductive layer. | 02-02-2012 |
| 20120024362 | REFRACTIVE INDEX MATCHING OF THIN FILM LAYERS FOR PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Thin film photovoltaic devices are generally provided. In one embodiment, the device includes a high index layer (e.g., having a refractive index of about 2 or more) on a glass substrate and a low index layer (e.g., having a refractive index of about 1.5 or less) on the high index layer. A transparent conductive oxide layer is positioned on the low index layer, and a photovoltaic heterojunction (e.g., a cadmium sulfide layer and a cadmium telluride layer) is positioned on the transparent conductive oxide layer. In an alternative embodiment, the device can include the low index layer on the glass substrate and the high index layer on the low index layer. Methods are also generally provided for manufacturing such thin film photovoltaic devices. | 02-02-2012 |
| 20120024692 | MIXED SPUTTERING TARGETS AND THEIR USE IN CADMIUM SULFIDE LAYERS OF CADMIUM TELLURIDE VASED THIN FILM PHOTOVOLTAIC DEVICES - Methods are generally provided of sputtering a cadmium sulfide layer on a substrate. The cadmium sulfide layer can be sputtered on a substrate from a mixed target including cadmium, sulfur, and oxygen. The cadmium sulfide layer can be used in methods of forming cadmium telluride thin film photovoltaic devices. | 02-02-2012 |
| 20120028407 | MULTI-LAYER N-TYPE STACK FOR CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MAKING - Thin film photovoltaic devices are provided that generally include a transparent conductive oxide layer on the glass, a multi-layer n-type stack on the transparent conductive oxide layer, and a cadmium telluride layer on the multi-layer n-type stack. The multi-layer n-type stack generally includes a first layer and a second layer, where the first layer comprises cadmium and sulfur and the second layer comprises cadmium and oxygen. The multi-layer n-type stack can, in certain embodiments, include additional layers (e.g., a third layer, a fourth layer, etc.). Methods are also generally provided for manufacturing such thin film photovoltaic devices. | 02-02-2012 |
| 20120028409 | METHODS OF FORMING AN ANISOTROPIC CONDUCTIVE LAYER AS A BACK CONTACT IN THIN FILM PHOTOVOLTAIC DEVICES - Thin film photovoltaic devices are generally provided. The device can include a transparent conductive oxide layer on a glass substrate, an n-type thin film layer on the transparent conductive layer, and a p-type thin film layer on the n-type layer. The n-type thin film layer and the p-type thin film layer form a p-n junction. An anisotropic conductive layer is applied on the p-type thin film layer, and includes a polymeric binder and a plurality of conductive particles. A metal contact layer can then be positioned on the anisotropic conductive layer. | 02-02-2012 |
| 20120061238 | SPUTTERING CATHODE HAVING A NON-BONDED SEMICONDUCTING TARGET - A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface and a back surface opposite to the sputtering surface. A backing plate can be positioned facing the back surface of the target and non-bonded to the back surface of the target. A non-bonding attachment mechanism can removably hold the target within the sputtering cathode such that the back surface is facing the backing plate during sputtering. | 03-15-2012 |
