Patent application number | Description | Published |
20080273566 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF PRODUCING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, BACKLIGHT, DISPLAY UNIT, ELECTRONIC DEVICE, AND LIGHT-EMITTING UNIT - A semiconductor light-emitting element includes a nitride-based Group III-V compound semiconductor, wherein the semiconductor light-emitting element has a structure in which an active layer including one or a plurality of well layers is sandwiched between a p-side cladding layer and an n-side cladding layer, and the composition of at least one of the well layers of the active layer is modulated in the direction perpendicular to the thickness direction of the least one of the well layers. | 11-06-2008 |
20090008648 | GALLIUM NITRIDE-BASED SEMICONDUCTOR ELEMENT, OPTICAL DEVICE USING THE SAME, AND IMAGE DISPLAY APPARATUS USING OPTICAL DEVICE - A GaN-based semiconductor element which can suppress a leakage current generated during reverse bias application, an optical device using the same, and an image display apparatus using the optical device are provided. The GaN-based semiconductor element has a first GaN-based compound layer including an n-type conductive layer; a second GaN-based compound layer including a p-type conductive layer; and an active layer provided between the first GaN-based compound layer and the second GaN-based compound layer. In this GaN-based semiconductor element, the first GaN-based compound layer includes an underlayer having an n-type impurity concentration in the range of 3×10 | 01-08-2009 |
20090206325 | GAN BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING SAME - A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an n-conductivity type; an active layer; a second GaN based compound semiconductor layer; an underlying layer composed of a GaN based compound semiconductor, the underlying layer being disposed between the first GaN based compound semiconductor layer and the active layer; and a superlattice layer composed of a GaN based compound semiconductor doped with a p-type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer. | 08-20-2009 |
20090230878 | GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT ASSEMBLY, LIGHT-EMITTING APPARATUS, METHOD OF MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF DRIVING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND IMAGE DISPLAY APPARATUS - A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side. | 09-17-2009 |
20090242874 | GaN BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING SAME - A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an n-conductivity type; an active layer; a second GaN based compound semiconductor layer; an underlying layer composed of a GaN based compound semiconductor, the underlying layer being disposed between the first GaN based compound semiconductor layer and the active layer; and a superlattice layer composed of a GaN based compound semiconductor doped with a p-type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer. | 10-01-2009 |
20090256494 | GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT ASSEMBLY, LIGHT-EMITTING APPARATUS, METHOD OF DRIVING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND IMAGE DISPLAY APPARATUS - A GaN-based semiconductor light-emitting element is provided and includes a first GaN-based compound semiconductor layer; an active layer having a multi-quantum well structure; and a second GaN-based compound semiconductor layer. At least one of barrier layers constituting the active layer is composed of a varying-composition barrier layer, and the composition of the varying-composition barrier layer varies in the thickness direction thereof so that the band-gap energy in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the second GaN-based compound semiconductor layer and the varying-composition barrier layer, is lower than that in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the first GaN-based compound semiconductor layer and the varying-composition barrier layer. | 10-15-2009 |
20120223345 | LIGHT EMITTING UNIT AND DISPLAY DEVICE - A light emitting unit including plural kinds of light emitting elements with different light emitting wavelengths, wherein, among the light emitting elements, at least one kind of light emitting element includes a semiconductor layer configured by laminating a first conductive layer, an active layer and a second conductive layer and having a side surface exposed by the first conductive layer, the active layer and the second conductive layer; a first electrode electrically connected to the first conductive layer; a second electrode electrically connected to the second conductive layer; a first insulation layer contacting at least an exposed surface of the active layer in the surface of the semiconductor layer; and a metal layer contacting at least a surface, which is opposite to the exposed surface of the active layer, in the surface of the first insulation layer, and electrically separated from the first electrode and the second electrode. | 09-06-2012 |
20140077682 | DISPLAY DEVICE AND LIGHT-EMITTING ELEMENT - There is provided a display device including a light-emitting element body part, a low refractive index layer part which is provided over a light output surface of the light-emitting element body part and has a first refractive index, and a packaging member which is provided to seal the light-emitting element body part and the low refractive index layer part inside the packaging member, has a planar light output surface, and has a second refractive index which is greater than the first refractive index. | 03-20-2014 |
20140235037 | CRYSTAL FILM, CRYSTAL SUBSTRATE, AND SEMICONDUCTOR DEVICE - A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate ( | 08-21-2014 |