| Patent application number | Description | Published |
|---|
| 20080315746 | Method of Manufacturing Fine Structure, Fine Structure, Display Unit, Method of Manufacturing Recoding Device, and Recoding Device - A method of manufacturing a fine structure capable of accurately controlling formation positions of tubular structures made of carbon or the like is provided. Column-shaped protrusions ( | 12-25-2008 |
| 20090121605 | METHOD OF MANUFACTURING TUBULAR CARBON MOLECULE AND TUBULAR CARBON MOLECULE, METHOD OF MANUFACTURING RECORDING APPARATUS AND RECORDING APPARATUS, METHOD OF MANUFACUTRING FIELD ELECTRON EMISSION DEVICE AND FIELD ELECTRON EMISSION DEVICE - A method of manufacturing a tubular carbon molecule capable of regularly aligning a carbon nanotube with a finer spacing is provided. A catalyst is arranged on a material substrate ( | 05-14-2009 |
| 20090194760 | Memory element and display device - Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in which a channel region, and an input terminal and an output terminal located on both sides of the channel region, respectively, are formed, and a gate electrode overlapping the channel region through an insulating film to become a control terminal, the resistance change element including one conductive layer connected to the input terminal side of the thin film transistor, the other conductive layer connected to the output terminal side of the thin film transistor, and at least one oxide film layer disposed between the one conductive layer and the other conductive layer. | 08-06-2009 |
| 20090230390 | THIN FILM TRANSISTOR AND DISPLAY - A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer. | 09-17-2009 |
| 20100097838 | OPTICAL SENSOR ELEMENT, IMAGING DEVICE, ELECTRONIC EQUIPMENT AND MEMORY ELEMENT - An optical sensor element has a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage. | 04-22-2010 |
| 20100171120 | DISPLAY AND METHOD FOR MANUFACTURING DISPLAY - In the case of forming switching elements and light sensor elements over the same substrate, an increase in the film thickness of active layers in an attempt to enhance the sensitivity of the light sensor elements would adversely affect the characteristics of the switching elements (TFTs). In a configuration of a display in which a channel layer | 07-08-2010 |
