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Goodner
Aron Y. Goodner, Minneapolis, MN US
| Patent application number | Description | Published |
|---|---|---|
| 20100125120 | POLYMERIC COMPOSITIONS AND METHOD OF MAKING AND ARTICLES THEREOF - Described herein are substantially linear copolymeric compositions having at least two azide groups and at least two non-activated acetylene groups. The azide groups and the non-activated acetylene groups are reacted to cure the substantially linear copolymer composition. Also, described are methods of making and using such substantially linear copolymeric compositions. | 05-20-2010 |
Aron Y. Goodner, Bozeman, MT US
| Patent application number | Description | Published |
|---|---|---|
| 20110135861 | FLUOROPOLYMER COMPOSITIONS AND METHOD OF MAKING AND USING THEREOF - Compositions having a fluoropolymer with a nitrile-containing cure site and at least a) a mono azide with at least one functional group in the beta position, or b) a polyazide, as a curing agent as well as methods and articles thereof are described. Articles of this disclosure are found to exhibit excellent chemical resistance and thermal stability. | 06-09-2011 |
Barry Goodner, Fort Mill, SC US
| Patent application number | Description | Published |
|---|---|---|
| 20090032205 | BLACK-OUT PANELS - Blackout panels include a first blackout panel and a second blackout panel, each having opposing inner and outer surfaces and a pair of opposing vertical edge portions and top and bottom portions. At least one of the vertical edge portions of each panel includes a first elongate fastening strip comprising hooks or loops. The elongate strip extends for at least a major portion of a length of the panel and terminates a distance of between about 5-20 inches below the top portion of the respective blackout panel. | 02-05-2009 |
Duane Goodner, Boise, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20110129991 | Methods Of Patterning Materials, And Methods Of Forming Memory Cells - Some embodiments include methods of patterning materials. A mass may be formed over a material, and a first mask may be formed over the mass. First spacers may be formed along features of the first mask, and then the first mask may be removed to leave a second mask corresponding to the first spacers. A pattern of the second mask may be partially transferred into the mass to form an upper portion of the mass into a third mask. The first spacers may be removed from over the third mask, and then second spacers be formed along features of the third mask. The second spacers are a fourth mask. A pattern of the fourth mask may be transferred into a bottom portion of the mass, and then the bottom portion may be used as a mask during processing of the underlying material. | 06-02-2011 |
Michael D. Goodner, Hillsboro, OR US
| Patent application number | Description | Published |
|---|---|---|
| 20090133908 | INTERCONNECT STRUCTURE FOR A MICROELECTRONIC DEVICE, METHOD OF MANFACTURING SAME, AND MICROELECTRONIC STRUCTURE CONTAINING SAME - An interconnect structure for a microelectronic device includes an electrically conductive material ( | 05-28-2009 |
| 20100210072 | Buffer coating having a physical mixture of high toughness polymer and a low shrinkage polymer - Embodiments of buffer coatings for semiconductor and integrated circuit manufacturing are presented herein. | 08-19-2010 |