| Patent application number | Description | Published |
|---|
| 20090032920 | LASER RELEASE PROCESS FOR VERY THIN SI-CARRIER BUILD - A laser release and glass chip removal process for a integrated circuit module avoiding carrier edge cracking is provided. | 02-05-2009 |
| 20090053908 | Metalized Elastomeric Electrical Contacts - Techniques for forming enhanced electrical connections are provided. In one aspect, an electrical connecting device comprises an electrically insulating carrier having one or more contact structures traversing a plane thereof. Each contact structure comprises an elastomeric material having an electrically conductive layer running along at least one surface thereof continuously through the plane of the carrier. | 02-26-2009 |
| 20090298292 | PROCESSING FOR OVERCOMING EXTREME TOPOGRAPHY - A process for overcoming extreme topographies by first planarizing a cavity in a semiconductor substrate in order to create a planar surface for subsequent lithography processing. As a result of the planarizing process for extreme topographies, subsequent lithography processing is enabled including the deposition of features in close proximity to extreme topographic surfaces (e.g., deep cavities or channels) and, including the deposition of features within a cavity. In a first embodiment, the process for planarizing a cavity in a semiconductor substrate includes the application of dry film resists having high chemical resistance. In a second embodiment, the process for planarizing a cavity includes the filling of cavity using materials such as polymers, spin on glasses, and metallurgy. | 12-03-2009 |
| 20090300914 | Metallized Elastomeric Electrical Contacts - Techniques for forming enhanced electrical connections are provided. In one aspect, a method of forming an electrical connecting device includes the steps of: depositing an elastomeric material on an electrically insulating carrier; and metallizing the elastomeric material so as to form an electrically conductive layer running continuously through a plane of the carrier and along a surface of the elastomeric material. | 12-10-2009 |
| 20100038126 | INTERPOSER STRUCTURES AND METHODS OF MANUFACTURING THE SAME - Flexible and rigid interposers for use in the semiconductor industry and methods for manufacturing the same are described. Auto-catalytic processes are used to minimize the costs associated with the production of flexible interposers, while increasing the yield and lifetime. Electrical contact regions are easily isolated and the risk of corrosion is reduced because all portions of the interposer are plated at once. Leads projecting from the flexible portion of the interposers accommodate a greater variety of components to be tested. Rigid interposers include a pin projecting from a probe pad affixed to a substrate. The rigidity of the pin penetrates oxides on a contact pad to be tested. Readily available semiconductor materials and processes are used to manufacture the flexible and rigid interposers according to the invention. The flexible and rigid interposers can accommodate pitches down to 25 μm. | 02-18-2010 |
| 20110130005 | PROCESSING FOR OVERCOMING EXTREME TOPOGRAPHY - A process for overcoming extreme topographies by first planarizing a cavity in a semiconductor substrate in order to create a planar surface for subsequent lithography processing. As a result of the planarizing process for extreme topographies, subsequent lithography processing is enabled including the deposition of features in close proximity to extreme topographic surfaces (e.g., deep cavities or channels) and, including the deposition of features within a cavity. In a first embodiment, the process for planarizing a cavity in a semiconductor substrate includes the application of dry film resists having high chemical resistance. In a second embodiment, the process for planarizing a cavity includes the filling of cavity using materials such as polymers, spin on glasses, and metallurgy. | 06-02-2011 |
