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Golberg
Christian Golberg, Gelsenkirchen DE
| Patent application number | Description | Published |
|---|---|---|
| 20110011393 | ATOMIZER - An atomizer for a fluid, in particular, a fluid for medical aerosol therapy. In order to allow simplified operation and improved safety in use, the atomizer has a counter device for counting the number of operations of the atomizer and the number of containers inserted. The atomizer is locked against further operation and/or against removal of the current container or insertion of a new container, if a certain number of operations of the atomizer and/or a certain number of containers inserted has/have been reached or exceeded. | 01-20-2011 |
Cindy Golberg, Austin, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20080197487 | Semiconductor Device Including a Coupled Dielectric Layer and Metal Layer, Method of Fabrication Thereof, and Material for Coupling a Dielectric Layer and a Metal Layer in a Semiconductor Device - A passivating coupling material for, on the one hand, passivating a dielectric layer in a semiconductor device, and on the other hand, for permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. In a particular example, the dielectric layer may be a porous material having a desirably decreased dielectric constant k, and the passivating coupling material provides steric shielding groups that substantially block the adsorption and uptake of ambient moisture into the porous dielectric layer. The passivating coupling materials also provides metal nucleation sides for promoting the deposition of a metal thereon in liquid phase, in comparison with metal deposition without the presence of the passivating coupling material. The use of a liquid phase metal deposition process facilitates the subsequent manufacture of the semiconductor device. In one example, the passivating coupling material has multiple Si atoms in its chemical composition, which desirably increases the thermal stability of the material. | 08-21-2008 |
| 20100139526 | SEMICONDUCTOR DEVICE INCLUDING A COUPLED DIELECTRIC LAYER AND METAL LAYER, METHOD OF FABRICATION THEREOR, AND MATERIAL FOR COUPLING A DIELECTRIC LAYER AND A METAL LAYER IN A SEMICONDUCTOR DEVICE - A passivating coupling material for, on the one hand, passivating a dielectric layer in a semiconductor device, and on the other hand, for permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. In a particular example, the dielectric layer may be a porous material having a desirably decreased dielectric constant k, and the passivating coupling material provides steric shielding groups that substantially block the adsorption and uptake of ambient moisture into the porous dielectric layer. The passivating coupling materials also provides metal nucleation sides for promoting the deposition of a metal thereon in liquid phase, in comparison with metal deposition without the presence of the passivating coupling material. The use of a liquid phase metal deposition process facilitates the subsequent manufacture of the semiconductor device. In one example, the passivating coupling material has multiple Si atoms in its chemical composition, which desirably increases the thermal stability of the material. | 06-10-2010 |
Dmitri Golberg, Ibaraki JP
| Patent application number | Description | Published |
|---|---|---|
| 20110033707 | SPHERICAL BORON NITRIDE NANOPARTICLES AND SYNTHETIC METHOD THEREOF - Spherical boron nitride nanoparticles having an average particle diameter is less than 50 nm is obtained by a method of synthesizing spherical boron nitride nanoparticles including the following steps; heating a mixture of boric acid ester and nitrogen gas in ammonia gas and argon gas to form reaction product; crystallizing reaction product to form precursor of spherical boron nitride nanoparticles; and, heating the precursor in inert gas. | 02-10-2011 |
| 20110086965 | BORON NITRIDE NANOSHEET, METHOD FOR PRODUCING BORON NITRIDE NANOSHEET THEREOF AND COMPOSITION CONTAINING BORON NITRIDE NANOSHEET THEREOF - A boron nitride nanosheet containing three-layered hexagonal boron nitride, which is in a form of multi-layered hexagonal boron nitride with some its layers peeled, can be produced by dispersing pristine hexagonal boron nitride powder in an organic solvent and by subjecting the fluid dispersion to ultrasonication. | 04-14-2011 |
Dmitri Golberg, Tsukuba-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090221734 | RESIN COMPOSITION AND PROCESS FOR THE PRODUCTION THEREOF - The object of this invention is to provide a polyamide resin composition excellent in insulating properties, mechanical properties and dimensional stability. This invention is a resin composition containing 100 parts by weight of a polyamide resin and 0.01 to 50 parts by weight of boron nitride nanotubes. The invention also includes a formed article from the resin composition and processes for the production of the resin composition and the formed article. | 09-03-2009 |
| 20100108276 | BORON NITRIDE-BASED FIBER PAPER AND MANUFACTURING PROCESS THEREOF - A boron nitride fiber paper having a very small fiber diameter and exhibiting excellent heat resistance, mechanical properties and heat conductivity. The fiber paper is composed of a fiber assembly which contains boron nitride fibers having a fiber diameter of not more than 1 μm in an amount of not less than 40 wt %. | 05-06-2010 |