Patent application number | Description | Published |
20090010004 | OPTICAL DEVICE AND ILLUMINATION DEVICE - An optical device guides illuminating light from a light source and includes a light-guiding unit including an incidence face which the illuminating light from the light source is incident upon, an emission face which emits the illuminating light and has a larger area than the incidence face, and a reflection face which guides rays of the illuminating light which are incident from the incidence face to the emission face, and a holder which secures the light-guiding unit in position with the light source. The light-guiding unit and the holder are connected together on the emission face side of the light-guiding unit. | 01-08-2009 |
20110313254 | LIGHT SOURCE DEVICE AND ENDOSCOPIC APPARATUS - An object is to provide a light source device that can readily synchronize the lighting cycle of light sources and the rotation cycle of a light guide rod. Provided is a light source device ( | 12-22-2011 |
20130193875 | LIGHT SOURCE APPARATUS - A light source apparatus includes: a first light source unit; a second light source unit; and a light source control section that, divides a plurality of light sources in the first light source unit into a first light source group, light from which enters near an optical axis, and a second light source group surrounding the first light source group, and divides a plurality of light sources in the second light source unit into a third light source group, light from which enters near the optical axis, and a fourth light source group surrounding the third light source group, and performs control to decrease an output of the second light source group to be lower than an output of the first light source group and decrease an output of the fourth light source group to be lower than an output of the third light source group. | 08-01-2013 |
20140031624 | ENDOSCOPE APPARATUS - An endoscope apparatus according to a present embodiment has a CCD and an LED control section which controls LED1 and LED2. The LED control section sequentially drives the two LEDs, LED1 and LED2, on the basis of an image pickup start timing signal corresponding to each image pickup cycle S for the CCD within the image pickup cycle S such that driving time periods for LED1 and LED2 do not overlap. The LED control section also variably controls the driving time periods for LED1 and LED2 to adjust an amount of exposure within the image pickup cycle S and performs control so as to conduct, within the image pickup cycle S, at least a first drive within the image pickup cycle S of LED2 that is a second or subsequent one to be driven with reference to a timing for driving of LED1 that is driven earlier. | 01-30-2014 |
Patent application number | Description | Published |
20090218576 | THIN-FILM TRANSISTOR AND DISPLAY DEVICE - A thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions so as to be overlapped at least partly with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of conductive layers which is overlapped over the gate insulating layers at least partly with the gate electrode and the impurity semiconductor layers, and is disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer which is in contact with the gate insulating layer and the pair of conductive layers and is extended between the pair of conductive layers. | 09-03-2009 |
20090236600 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - A thin film transistor is provided, which includes a gate insulating layer covering a gate electrode, a microcrystalline semiconductor layer provided over the gate insulating layer, an amorphous semiconductor layer overlapping the microcrystalline semiconductor layer and the gate insulating layer, and a pair of impurity semiconductor layers which are provided over the amorphous semiconductor layer and to which an impurity element imparting one conductivity type is added to form a source region and a drain region. The gate insulating layer has a step adjacent to a portion in contact with an end portion of the microcrystalline semiconductor layer. A second thickness of the gate insulating layer in a portion outside the microcrystalline semiconductor layer is smaller than a first thickness thereof in a portion in contact with the microcrystalline semiconductor layer. | 09-24-2009 |
20150380417 | Field-Effect Transistor, and Memory and Semiconductor Circuit Including the Same - Provided is a field-effect transistor (FET) having small off-state current, which is used in a miniaturized semiconductor integrated circuit. The field-effect transistor includes a thin oxide semiconductor which is formed substantially perpendicular to an insulating surface and has a thickness of greater than or equal to 1 nm and less than or equal to 30 nm, a gate insulating film formed to cover the oxide semiconductor, and a strip-like gate which is formed to cover the gate insulating film and has a width of greater than or equal to 10 nm and less than or equal to 100 nm. In this structure, three surfaces of the thin oxide semiconductor are covered with the gate, so that electrons injected from a source or a drain can be effectively removed, and most of the space between the source and the drain can be a depletion region; thus, off-state current can be reduced. | 12-31-2015 |
Patent application number | Description | Published |
20110134581 | POWER SEMICONDUCTOR DEVICE FOR IGNITER - A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current flowing through the primary side of the ignition coil; an integrated circuit driving and controlling the semiconductor switching device; and a temperature sensing element sensing temperature of the semiconductor switching device, wherein the integrated circuit including an overheat protection circuit limiting a current through the semiconductor switching device to a value lower than a current through the semiconductor switching device during normal operation, when temperature sensed by the temperature sensing element is over predetermined temperature. | 06-09-2011 |
20110141640 | POWER SEMICONDUCTOR DEVICE FOR IGNITER - A power semiconductor device for an igniter comprises: a first semiconductor switching device; and an integrated circuit, wherein the integrated circuit includes: a second semiconductor switching device connected in parallel with the first semiconductor switching device and having a smaller current capacity than a current capacity of the first semiconductor switching device; a delay circuit delaying a control input signal so that the second semiconductor switching device is energized prior to the first semiconductor switching device; a third semiconductor switching device including a thyristor structure connected to a high voltage side main terminal of the second semiconductor switching device and being made conductive by a part of a main current flowing through the energized second semiconductor switching device; and a first excess voltage detection circuit stopping the first semiconductor switching device when voltage on the high voltage side main terminal is equal to or more than predetermined voltage. | 06-16-2011 |
20110141651 | POWER SEMICONDUCTOR DEVICE FOR IGNITER - A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current; and an integrated circuit driving and controlling the semiconductor switching device, wherein the integrated circuit includes: a first discharge device discharging charge accumulated on a control terminal of the semiconductor switching device and shutting off the semiconductor switching device so as to generate ignition plug spark voltage on a secondary side of the ignition coil during a normal operation; and a second discharge device slower discharging the charge accumulated on the control terminal in comparison with the first discharge device and shutting off the semiconductor switching device so that a voltage on the second side of the ignition coil is equal to or lower than the ignition plug spark voltage during an abnormal state. | 06-16-2011 |
20110310645 | SEMICONDUCTOR DEVICE AND SNUBBER DEVICE - A semiconductor device of the present invention includes a switching transistor, and a recovery diode and a snubber device which are mounted on a single conductive substrate (frame) on which the switching transistor is also mounted. The snubber device includes a SiC-MOSFET connected between an output terminal C and a reference terminal E of the switching transistor, a Zener diode formed between a gate terminal G and a drain terminal D of the SiC-MOSFET, and a resistor formed between the gate terminal G and a source terminal S of the SiC-MOSFET. The reference terminal E of the switching transistor, the source terminal S of the SiC-MOSFET, and an anode terminal of the recovery diode are commonly connected. | 12-22-2011 |
20120307532 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a parallel connection structure | 12-06-2012 |
20150381170 | SEMICONDUCTOR DEVICE - The present invention has an object to provide a semiconductor device that has protective functions and is capable of achieving miniaturization and cost reduction. A semiconductor device according to the present invention includes a switching element, a drive circuit, and a control circuit. When a high-level drive control signal is output from the drive circuit, the control circuit stops driving of the switching element and charges an electric charge storing capacitor. When a low-level drive control signal is output from the drive circuit, the control circuit drives the switching element using electric charges stored in the electric charge storing capacitor. | 12-31-2015 |