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Godo
Hirokazu Godo, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090010004 | OPTICAL DEVICE AND ILLUMINATION DEVICE - An optical device guides illuminating light from a light source and includes a light-guiding unit including an incidence face which the illuminating light from the light source is incident upon, an emission face which emits the illuminating light and has a larger area than the incidence face, and a reflection face which guides rays of the illuminating light which are incident from the incidence face to the emission face, and a holder which secures the light-guiding unit in position with the light source. The light-guiding unit and the holder are connected together on the emission face side of the light-guiding unit. | 01-08-2009 |
Hiromichi Godo, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20090218576 | THIN-FILM TRANSISTOR AND DISPLAY DEVICE - A thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions so as to be overlapped at least partly with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of conductive layers which is overlapped over the gate insulating layers at least partly with the gate electrode and the impurity semiconductor layers, and is disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer which is in contact with the gate insulating layer and the pair of conductive layers and is extended between the pair of conductive layers. | 09-03-2009 |
| 20090236600 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - A thin film transistor is provided, which includes a gate insulating layer covering a gate electrode, a microcrystalline semiconductor layer provided over the gate insulating layer, an amorphous semiconductor layer overlapping the microcrystalline semiconductor layer and the gate insulating layer, and a pair of impurity semiconductor layers which are provided over the amorphous semiconductor layer and to which an impurity element imparting one conductivity type is added to form a source region and a drain region. The gate insulating layer has a step adjacent to a portion in contact with an end portion of the microcrystalline semiconductor layer. A second thickness of the gate insulating layer in a portion outside the microcrystalline semiconductor layer is smaller than a first thickness thereof in a portion in contact with the microcrystalline semiconductor layer. | 09-24-2009 |
Masato Godo, Matsumoto-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110239423 | MANUFACTURING METHOD OF PIEZOELECTRIC ACTUATOR - After the piezoelectric element forming process, in the etching process, etching is performed on a portion of at least the vibrating plate between the lead-out electrodes formed afterwards in the lead-out electrode forming process in a condition where the upper electrode film etching residual is removed and the vibrating plate is not removed. In the piezoelectric element forming process, even if the upper electrode film etching residual is generated between the lead-out electrodes, the upper electrode film etching residual is divided up due to the etching and it is possible to maintain insulation between the lead-out electrodes formed in the upper electrode film etching residual. Accordingly, it is possible to obtain the manufacturing method of the piezoelectric actuator which reduces driving defects in the piezoelectric actuator generated by short circuiting between the lead-out electrodes. | 10-06-2011 |
Shinsuke Godo, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110134581 | POWER SEMICONDUCTOR DEVICE FOR IGNITER - A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current flowing through the primary side of the ignition coil; an integrated circuit driving and controlling the semiconductor switching device; and a temperature sensing element sensing temperature of the semiconductor switching device, wherein the integrated circuit including an overheat protection circuit limiting a current through the semiconductor switching device to a value lower than a current through the semiconductor switching device during normal operation, when temperature sensed by the temperature sensing element is over predetermined temperature. | 06-09-2011 |
| 20110141640 | POWER SEMICONDUCTOR DEVICE FOR IGNITER - A power semiconductor device for an igniter comprises: a first semiconductor switching device; and an integrated circuit, wherein the integrated circuit includes: a second semiconductor switching device connected in parallel with the first semiconductor switching device and having a smaller current capacity than a current capacity of the first semiconductor switching device; a delay circuit delaying a control input signal so that the second semiconductor switching device is energized prior to the first semiconductor switching device; a third semiconductor switching device including a thyristor structure connected to a high voltage side main terminal of the second semiconductor switching device and being made conductive by a part of a main current flowing through the energized second semiconductor switching device; and a first excess voltage detection circuit stopping the first semiconductor switching device when voltage on the high voltage side main terminal is equal to or more than predetermined voltage. | 06-16-2011 |
| 20110141651 | POWER SEMICONDUCTOR DEVICE FOR IGNITER - A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current; and an integrated circuit driving and controlling the semiconductor switching device, wherein the integrated circuit includes: a first discharge device discharging charge accumulated on a control terminal of the semiconductor switching device and shutting off the semiconductor switching device so as to generate ignition plug spark voltage on a secondary side of the ignition coil during a normal operation; and a second discharge device slower discharging the charge accumulated on the control terminal in comparison with the first discharge device and shutting off the semiconductor switching device so that a voltage on the second side of the ignition coil is equal to or lower than the ignition plug spark voltage during an abnormal state. | 06-16-2011 |
Yasuharu Godo, Shiojiri-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080238956 | LIQUID DETECTION DEVICE, LIQUID CONTAINER USING THE SAME, AND METHOD OF PRODUCING LIQUID DETECTION DEVICE - A liquid detection device includes a casing main body in which a passage is formed and exposed in an opening, a sensor base that is disposed to face the passage of the casing main body, a sensor chip provided on the sensor base, a film that seals the opening in which the sensor base is held, and a partition wall that divides the passage into an upstream side and an downstream side. The sensor chip has a sensor cavity, and the sensor base has a first hole that guides a liquid from the upstream side to the sensor cavity, and a second hole that guides the liquid from the sensor cavity to the downstream side. The sensor base can come into contact with the casing main body through only the partition wall in a depth direction of the opening. | 10-02-2008 |