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Godet
Angelique Godet, Paris FR
| Patent application number | Description | Published |
|---|---|---|
| 20120021999 | PRO-APOPTOTIC PEPTIDES - The invention relates to chimeric peptides useful as pro-apoptotic agents, for inhibition of in vitro cell proliferation and for treatment of tumors. | 01-26-2012 |
Christian Godet, Rennes FR
| Patent application number | Description | Published |
|---|---|---|
| 20090273394 | ADJUSTABLE CAPACITY DEVICE AND PROCESS THEREOF - The invention specifically concerns a device for varying the apparent level of a capacity, said device being characterized in that it compromises: —a dipole ( | 11-05-2009 |
Guillaume Godet, Antony FR
| Patent application number | Description | Published |
|---|---|---|
| 20080226253 | System and Method For Managing the Visual Effects Insertion in a Video Stream - A method and system are presented for use in real-time insertion of visual effects in a video stream. At least one reference image is used that contains a region of interest, which is to be involved in the video stream. the reference image is processed by defining a set of at least a few reference features therein, and inserting the visual effects into the reference image with a desired orientation of the visual effects with respect to the region of interest in the reference image. Successive video frames are grabbed in a sequence of a few video frames, and at least one of video frames is used as at least one snapshot image. The snapshot image(s) is/are process by selecting therein at least two from the reference features and determining a reference transformation between the snapshot image and the reference image. Independently of this processing of the snapshot image, the snapshot image and other video frames are processed to determine a sequence of transformations between them. These data are utilized to determine an operative transformation between the reference image and either one of the video frames, thereby enabling real-time management of the appearance of the visual effects in the video stream by using the operative transformation for the insertion of the visual effects in other video frames. | 09-18-2008 |
Ludo Godet, Boston, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20120000421 | CONTROL APPARATUS FOR PLASMA IMMERSION ION IMPLANTATION OF A DIELECTRIC SUBSTRATE - A control apparatus for plasma immersion ion implantation of a dielectric substrate which includes an electrode disposed above a generated plasma in a plasma chamber. The electrode is biased with negative voltage pulses at a potential that is higher than a potential of a substrate or cathode configured to receive ion implantation. The electrode is more negative to give the electrons generated as secondary electrons from the electrode sufficient energy to overcome the negative voltage of the high voltage sheath around the substrate thereby reaching the substrate. These electrons are accelerated toward the substrate to neutralize charge build-up on the substrate. | 01-05-2012 |
Ludovic Godet, Wakefield, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20090084987 | CHARGE NEUTRALIZATION IN A PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a process chamber, a source configured to generate a plasma in the process chamber, and a platen configured to support a workpiece in the process chamber. The platen is biased with a pulsed platen signal having pulse ON and OFF time periods to accelerate ions from the plasma towards the workpiece during the pulse ON time periods and not the pulse OFF time periods. A plate is positioned in the process chamber. The plate is biased with a plate signal to accelerate ions from the plasma towards the plate to cause an emission of secondary electrons from the plate during at least a portion of one of the pulse OFF time periods of the pulsed platen signal to at least partially neutralize charge accumulation on the workpiece. | 04-02-2009 |
| 20090200461 | Closed Loop Control And Process Optimization In Plasma Doping Processes Using A Time of Flight Ion Detector - A method of controlling a plasma doping process using a time-of-flight ion detector includes generating a plasma comprising dopant ions in a plasma chamber proximate to a platen supporting a substrate. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A spectrum of ions present in the plasma is measured as a function of ion mass with a time-of-flight ion detector. The total number ions impacting the substrate is measured with a Faraday dosimetry system. An implant profile is determined from the measured spectrum of ions. An integrated dose is determined from the measured total number of ions and the calculated implant profile. At least one plasma doping parameter is modified in response to the calculated integrated dose. | 08-13-2009 |
Ludovic Godet, N. Reading, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20090283670 | Technique for Monitoring and Controlling A PLasma Process - A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to selectively attract ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions. | 11-19-2009 |
Ludovic Godet, Boston, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20110124186 | APPARATUS AND METHOD FOR CONTROLLABLY IMPLANTING WORKPIECES - A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation. | 05-26-2011 |
| 20110186749 | ION SOURCE - An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled. | 08-04-2011 |
| 20110223546 | METHOD AND SYSTEM FOR MODIFYING SUBSTRATE RELIEF FEATURES USING ION IMPLANTION - A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure. | 09-15-2011 |
| 20110259408 | METHOD FOR PATTERNING A SUBSTRATE USING ION ASSISTED SELECTIVE DEPOSITION - A method of patterning a substrate includes providing a focusing plate adjacent to a plasma chamber containing a plasma, the focusing plate configured to extract ions from the plasma through at least one aperture that provides focused ions towards the substrate. The method further includes directing first ions through the at least one aperture to one or more first regions of the substrate so as to condense first gaseous species provided in ambient of the substrate on the one or more first regions of the substrate. | 10-27-2011 |
| 20110300696 | METHOD FOR DAMAGE-FREE JUNCTION FORMATION - Embodiments of this doping method may be used to improve junction formation. An implant species, such as helium or another noble gas, is implanted into a workpiece to a first depth. A dopant is deposited on a surface of the workpiece. During an anneal, the dopant diffuses to the first depth. The noble gas ions may at least partially amorphize the workpiece during the implant. The workpiece may be planar or non-planar. The implant and deposition may occur in a system without breaking vacuum. | 12-08-2011 |
| 20110309049 | TECHNIQUES FOR PLASMA PROCESSING A SUBSTRATE - Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration. | 12-22-2011 |
Pascal Godet, Jouy En Josas FR
| Patent application number | Description | Published |
|---|---|---|
| 20090080280 | Electronic memory device - An electronic memory device includes a bank of memories provided with a cache, a sequencer for providing physical access to said bank of memories, a physical interface for receiving high level memory access requests, a request manager between the physical interface and the sequencer, said request manager includes an input queue for storing the high level memory access requests and an arbitration function which takes account of the data of the cache and the data of the input queue to designate a request which is to be executed, thus allowing the memory bank, the sequencer and the request manager to be provided on a single chip, the physical interface providing the connection of the chip with the outside. | 03-26-2009 |
Sylvain Godet, Saint-Cezert FR
| Patent application number | Description | Published |
|---|---|---|
| 20110260757 | METHOD AND SYSTEM FOR GENERATING A PULSE SIGNAL OF THE ULTRA WIDE BAND TYPE - System for generating a pulsed signal of the ultra wideband type, comprising a device for direct digital frequency synthesis (DDS) comprising a phase accumulator (ACCP) able to deliver at a first frequency (Fclk) phases coded on i bits and spaced apart by a phase increment (Δp) differing by a power of two and situated in the vicinity of 2 | 10-27-2011 |
Sylvain Godet, Launaget FR
| Patent application number | Description | Published |
|---|---|---|
| 20090079441 | ELECTRONIC CIRCUIT COMPRISING A DEVICE TO MEASURE PHASE NOISE OF AN OSCILLATING AND/OR RESONANT DEVICE - An electronic circuit includes several (at least two) oscillating and/or resonant devices. The circuit uses a measuring device to measure the phase noise of one of the two oscillating/resonant devices. This measuring device is integrated on a chip on which said oscillating/resonant device to be measured is also integrated. The circuits and methods described find application in the area of radiofrequency/high frequency electronics RF/HF, in particular adapted to general public applications in mobile communication systems and/or to metrology. | 03-26-2009 |
Thierry Godet, Nueil-Les-Aubiers FR
| Patent application number | Description | Published |
|---|---|---|
| 20090152906 | Swinging and sliding sunroof device for motor vehicles - A sliding roof device ( | 06-18-2009 |
Yann Godet, Nantes FR
| Patent application number | Description | Published |
|---|---|---|
| 20110212098 | Novel Melanoma Antigen Peptide and Uses Thereof - The present invention relates to novel melanoma antigen peptides and specific T lymphocytes directed to said peptides and the use thereof for treating melanoma. | 09-01-2011 |