| Patent application number | Description | Published |
|---|
| 20100003468 | Method of forming microfined resist pattern - The present invention provides a pattern-producing method for fining a developed resist pattern without increasing the production cost or impairing the production efficiency seriously. This method comprises the step of bringing a resist pattern after development into contact with a treating solution preferably containing a nonionic surfactant for 60 seconds or more, so as to reduce the effective size of the resist pattern formed by the development. The present invention also provides a resist pattern fined by that method. | 01-07-2010 |
| 20100021700 | Method for formation of miniaturized pattern and resist substrate treatment solution for use in the method - The present invention provides a method for miniaturizing a pattern without seriously increasing the production cost or impairing the production efficiency. This invention also provides a fine resist pattern and a resist substrate-treating solution used for forming the fine pattern. The pattern formation method comprises a treatment step. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development. The present invention also relates to a resist pattern formed by that method, and further relates to a treating solution used in the method. | 01-28-2010 |
| 20100028817 | Solution for treatment of resist substrate after development processing and method for treatment of resist substrate using the same - The present invention provides a resist substrate-treating solution for improving defects on a developed pattern surface, and also provides a resist substrate treatment method employing the treating solution. The resist substrate-treating solution comprises a solvent and a nitrogen-containing or oxygen-containing water-soluble polymer such as a polyamine, a polyol or a polyether. In the treatment method, a developed resist pattern is treated with the resist substrate-treating solution and then washed with pure water. | 02-04-2010 |
| 20100062363 | COMPOSITION FOR UPPER SURFACE ANTIREFLECTION FILM, AND METHOD FOR PATTERN FORMATION USING THE SAME - The present invention provides a composition for forming a top anti-reflection coating and also provides a pattern formation method employing that composition. The composition prevents pattern failures caused by light reflected in the resist layer in the exposure step, and it further avoids troubles caused by residues produced in the etching step. The composition contains a solvent and fine particles having a mean particle size of 1 to 100 nm. In the pattern formation method of the present invention, a top anti-reflection coating is formed from the composition. The composition and the method according to the present invention can be used to form a composite film composed of a resist layer and a top anti-reflection coating. | 03-11-2010 |
| 20100233634 | Processing Liquid for Resist Substrate and Method of Processing Resist Substrate Using the Same - The present invention provides a resist substrate treating solution and a method for pattern formation using that treating solution, and thereby problems such as foreign substances on the substrate surface, pattern collapse and pattern roughness can be easily solved at the same time. The treating solution comprises water and an alkylene oxide adduct of a primary amine having a hydrocarbon group of 11 to 30 carbon atoms or of ammonia. The method for pattern formation according to the invention comprises a step of treating the developed pattern with that treating solution. | 09-16-2010 |
| 20100279235 | COMPOSITION FOR FORMATION OF TOP ANTI-REFLECTIVE FILM, AND PATTERN FORMATION METHOD USING THE COMPOSITION - The present invention provides a composition for forming a top anti-reflection coating having a low refractive index, realizing a gradual swing curve and giving a small swing ratio. This composition comprises a solvent and an anthracene skeleton-containing polymer having a hydrophilic group. The composition forms an anti-reflection coating on a photoresist film, and can be used in a photolithographic process for forming a pattern by use of light having a wavelength of 160 to 260 nm. | 11-04-2010 |
| 20100286318 | COMPOSITION FOR FORMATION OF TOP ANTIREFLECTIVE FILM, AND PATTERN FORMATION METHOD USING THE COMPOSITION - Disclosed is a composition for forming a top antireflective film, which comprises at least one fluorine-containing compound and a quaternary ammonium compound represented by the formula (1) [wherein at least one of R | 11-11-2010 |
| 20100308015 | SUPERFINE-PATTERNED MASK, METHOD FOR PRODUCTION THEREOF, AND METHOD EMPLOYING THE SAME FOR FORMING SUPERFINE-PATTERN - There is provided a method for forming a superfine pattern, which can simply produce a superfine pattern with high mass productivity. | 12-09-2010 |
