| Patent application number | Description | Published |
|---|
| 20090078003 | Free-surface mixing method and apparatus therefor - A method of mixing a viscous liquid comprising flowing the viscous liquid through an aperture to form a stream that falls through a free space volume by gravity. The viscous liquid may be directed through any combination of apertures. The corresponding streams of viscous liquid may be allowed to undergo fluid buckling as the streams fall, with the streams spreading the inhomogeneities and then recombining with each other, thereby mixing the viscous liquid globally and locally. A jet of gas may be directed against the falling streams to intertwine the streams, thereby mixing the viscous liquid. Alternatively, the streams may be manipulated with an electromagnetic field to create intertwining. | 03-26-2009 |
| 20090297395 | Methods of treating semiconducting materials and treated semiconducting materials - A method for treating semiconducting materials is disclosed. In the disclosed method, a semiconducting material having a crystalline structure is provided, at least a portion of the semiconducting material is exposed to a heat source to create a melt pool, and the semiconducting material is then cooled. Semiconducting materials treated by the method are also disclosed. | 12-03-2009 |
| 20100219549 | METHODS OF MAKING AN UNSUPPORTED ARTICLE OF SEMICONDUCTING MATERIAL BY CONTROLLED UNDERCOOLING - The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as semiconducting material that may be useful in making photovoltaic cells. | 09-02-2010 |
| 20100279068 | EMBOSSED GLASS ARTICLES FOR ANTI-FINGERPRINTING APPLICATIONS AND METHODS OF MAKING - A process for creating hydrophobic and oleophobic glass surfaces. The process consists of heating a glass article to temperatures near the glass softening point and pressing a textured mold into the glass article to create surface texture. The mold texture is selected to have dimensions that convey hydrophobicity and oleophobicity to the glass article when combined with appropriate surface chemistry. The surface features are controlled through choice of mold texture and through process parameters including applied pressure, temperature, and pressing time. Articles made by this process are also described. | 11-04-2010 |
| 20100290946 | METHODS OF MAKING AN ARTICLE OF SEMICONDUCTING MATERIAL ON A MOLD COMPRISING SEMICONDUCTING MATERIAL - The invention relates to methods of making articles of semiconducting material on a mold comprising semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells. | 11-18-2010 |
| 20110033643 | METHODS OF MAKING AN UNSUPPORTED ARTICLE OF PURE OR DOPED SEMICONDUCTING MATERIAL - The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells. | 02-10-2011 |
| 20110101281 | METHOD OF MAKING AN ARTICLE OF SEMICONDUCTING MATERIAL - A method of making an article of a semiconducting material involves withdrawing from a melt of molten semiconducting material a solid mold having already formed on an external surface of the mold a solid layer of the semiconducting material. During the act of withdrawal, one or more of a temperature, a force, and a relative rate of withdrawal are controlled in order to achieve one or more desired attributes in a solid overlayer of semiconductor material that is formed over the solid layer during the withdrawal. | 05-05-2011 |
| 20110133202 | HIGH THROUGHPUT RECRYSTALLIZATION OF SEMICONDUCTING MATERIALS - Methods for making and/or treating articles of semiconducting material are disclosed. In various methods, a first article of semiconducting material is provided, the first article of semiconducting material is heated sufficiently to melt the semiconducting material, and the melted semiconducting material is solidified in a direction substantially parallel to a shortest dimension of the melted article of semiconducting material. Articles of semiconducting materials made by methods described herein are also disclosed. | 06-09-2011 |
