Patent application number | Description | Published |
20110228234 | REFLECTIVE OPTICAL ELEMENT AND METHOD FOR PRODUCTION OF SUCH AN OPTICAL ELEMENT - In order to produce stress-reduced reflective optical elements ( | 09-22-2011 |
20120250144 | REFLECTIVE OPTICAL ELEMENT AND METHOD FOR OPERATING AN EUV LITHOGRAPHY APPARATUS - In order to reduce the adverse influence of contamination composed of silicon dioxide, hydrocarbons and/or metals within an EUV lithography apparatus on the reflectivity, a reflective optical element ( | 10-04-2012 |
20120314281 | REFLECTIVE OPTICAL ELEMENT AND METHOD FOR PRODUCTION OF SUCH AN OPTICAL ELEMENT - In order to produce stress-reduced reflective optical elements ( | 12-13-2012 |
20130038929 | MIRROR FOR THE EUV WAVELENGTH RANGE, SUBSTRATE FOR SUCH A MIRROR, PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY COMPRISING SUCH A MIRROR OR SUCH A SUBSTRATE, AND PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY COMPRISING SUCH A PROJECTION OBJECTIVE | 02-14-2013 |
20140199543 | REFLECTIVE OPTICAL ELEMENT AND OPTICAL SYSTEM FOR EUV LITHOGRAPHY - In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element ( | 07-17-2014 |
20140211178 | METHOD FOR PRODUCING A CAPPING LAYER COMPOSED OF SILICON OXIDE ON AN EUV MIRROR, EUV MIRROR, AND EUV LITHOGRAPHY APPARATUS - A method for producing a capping layer ( | 07-31-2014 |
20140211179 | EUV MIRROR COMPRISING AN OXYNITRIDE CAPPING LAYER HAVING A STABLE COMPOSITION, EUV LITHOGRAPHY APPARATUS, AND OPERATING METHOD | 07-31-2014 |
20150055108 | Mirror for the EUV Wavelength Range, Method for Producing such a Mirror, and Projection Exposure Apparatus Comprising such a Mirror | 02-26-2015 |