Patent application number | Description | Published |
20100142580 | LASER DEVICE WITH COUPLED LASER SOURCE AND WAVEGUIDE - Laser device comprising:
| 06-10-2010 |
20100193766 | Process for Producing a PN Homojunction in a Nanostructure - The invention relates to a process for producing a p-n junction in a nanostructure, in which the nanostructure has one or more nanoconstituents made of a semiconductor material with a single type of doping having one conductivity type, characterized in that it includes a step consisting in forming a dielectric element ( | 08-05-2010 |
20110180776 | OPTOELECTRONIC DEVICE BASED ON NANOWIRES AND CORRESPONDING PROCESSES - The invention relates to a method for making optoelectronic devices comprising nanowire semiconductors, in which: the nanowires ( | 07-28-2011 |
20120164767 | METHOD OF MANUFACTURING A LIGHT EMISSION DEVICE BASED ON LIGHT EMITTING DIODES - A method of manufacturing a device based on LEDs includes the growth of semiconducting nanowires on a first electrode produced on an insulating face, and encapsulation thereof in planarising material; the formation, on the planarising material, of a second electrode with contact take-up areas. LEDs are formed by releasing a band of the first electrode around each take-up area, including forming a mask defining the bands on the second electrode, chemically etching the planarising material, stopped so as to preserve planarising material, chemically etching the portion of nanowires thus released, and then chemically etching the remaining planarising material. A trench is formed along each of the bands as far as the insulating face and the LEDs are placed in series by connecting the take-up areas and bands of the first electrode. | 06-28-2012 |
20130112945 | NANOWIRE-BASED OPTOELECTRONIC DEVICE FOR LIGHT EMISSION - An optoelectronic device includes:
| 05-09-2013 |
20130140521 | OPTOELECTRONIC DEVICE INCLUDING NANOWIRES WITH A CORE/SHELL STRUCTURE - Optoelectronic device including light-emitting means in the form of nanowires ( | 06-06-2013 |
20140077156 | IN-SERIES ELECTRICAL CONNECTION OF LIGHT-EMITTING NANOWIRES - An optoelectronic device includes at least first and second light-emitting nanowires on a support, each comprising an area for the injection of holes and an area for the injection of electrons, a series electric connection including a connection nanowire on the support, which includes a first region forming an electric path with the hole injection area of the first nanowire, a second region forming an electric path with the electron injection area of the second nanowire, and a third region enabling a current to flow between first and second regions. Also included are a first conductive area connecting the hole injection area of the first nanowire and the first region of the connection nanowire and electrically insulated from the second nanowire, and a second conductive area connecting the second region of the connection nanowire and electron injection area of the second nanowire and electrically insulated from the first nanowire. | 03-20-2014 |
20140327037 | METHOD FOR MANUFACTURING A SEMICONDUCTOR MICRO- OR NANO-WIRE, SEMICONDUCTOR STRUCTURE COMPRISING SUCH A MICRO- OR NANO-WIRE, AND METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE - A method of manufacturing at least one semiconducting micro- or nano-wire used for formation of an optoelectric structure, optoelectronic structures including the micro- or nano-wires, and a method enabling manufacture of the photoelectronic structures. The method includes providing a semiconducting substrate, forming a crystalline buffer layer on the substrate, the buffer layer having a first zone over at least part of its thickness composed mainly of magnesium nitride in a form Mg | 11-06-2014 |
20150255677 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME - An optoelectronic device comprises a substrate; pads on a surface of the substrate; semiconductor elements, each element resting on a pad; a portion covering at least the lateral sides of each pad, the portion preventing the growth of the semiconductor elements on the lateral sides; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair. A method of manufacturing an optoelectronic device is also disclosed. | 09-10-2015 |
20150280053 | OPTOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing an optoelectric device comprising a semiconductor substrate, pads on a surface of the substrate; semiconductor elements, each element being in contact with a pad; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair, the method successively comprising the forming of the pads and the forming of the region, wherein the region is formed by nitriding of the substrate, the method comprising the successive steps of: depositing a layer on the substrate; forming portions on the layer; etching the parts of the layer which are not covered with the portions to form the pads; removing the portions; and nitriding the pads and the parts of the substrate which are not covered with the pads, wherein the nitriding step successively comprises: a first step of nitriding of the pads at a first temperature; and a second step of nitriding of the parts of the substrate which are not covered with the pads at a second temperature different from the first temperature. | 10-01-2015 |
20150280060 | NANOWIRE-BASED OPTOELECTRONIC DEVICE FOR LIGHT-EMISSION - A light-emitting diode is provided, including an active semiconductor area for the radiative recombination of electron-hole pairs having a plurality of nanowires, each made of an unintentionally doped semiconductor material, a first semiconductor area for radially injecting holes into each nanowire, the first semiconductor area being made of a doped semiconductor material having a first conductivity type and having a bandgap that is greater than the bandgap of the semiconductor material of the nanowires, and a second semiconductor area for axially injecting electrons into each nanowire, the second semiconductor area being made of a doped semiconductor material having a second conductivity type that is opposite to that of the first conductivity type. | 10-01-2015 |
20160056330 | LIGHT-EMITTING DEVICE COMPRISING ACTIVE NANOWIRES AND CONTACT NANOWIRES AND METHOD OF FABRICATION - A light-emitting device comprises a set of nanowires over the whole surface of a substrate, comprising at least a first series of first nanowires and a second series of second nanowires; the first series comprising first nanowires emitting light under electrical control, connected between a first and a second type of electrical contact to emit light under electrical control, the first nanowires covered by at least one conducting layer transparent at the wavelength of the light-emitting device, layer in contact with the first type of electrical contact; the second series comprising second nanowires, encapsulated in a layer of metal allowing the first electrical contact to be formed; the second electrical contact being on the back face of the substrate, opposite to the face comprising the nanowires, and provided by a conducting layer facing the first series of nanowires. A method of fabrication of the light-emitting device is provided. | 02-25-2016 |
20160093666 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME - The invention relates to an optoelectronic device ( | 03-31-2016 |