Patent application number | Description | Published |
20110051310 | Memcapacitive Devices - A memcapacitive device includes a first electrode having a first end and a second end and a second electrode. The device has a memcapacitive matrix interposed between the first electrode and the second electrode. The memcapacitive matrix has a non-linear capacitance with respect to a voltage across the first electrode and the second electrode. The memcapacitive matrix is configured to alter a signal applied on the first end by at least one of a) changing at least one of a rise-time and a fall-time of the signal and b) delaying the transmission of the signal based on the application of a programming voltage across the first electrode and the second electrode. | 03-03-2011 |
20110309321 | MEMRISTORS WITH A SWITCHING LAYER COMPRISING A COMPOSITE OF MULTIPLE PHASES - A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed. | 12-22-2011 |
20120018698 | LOW-POWER NANOSCALE SWITCHING DEVICE WITH AN AMORPHOUS SWITCHING MATERIAL - A nanoscale switching device exhibits multiple desired properties including a low switching current level, being electroforming-free, and cycling endurance. The switching device has an active region disposed between two electrodes. The active region contains a switching material capable of transporting dopants under an electric field. The switching material is in an amorphous state and formed by deposition at or below room temperature. | 01-26-2012 |
20120030434 | Memory Device - A memory device includes a memory array and a memory controller for altering a performance characteristic of the memory array to increase a rate at which the memory device writes data in response to the memory device experiencing a demand for bandwidth above a threshold. A method for adjusting the performance characteristics of a memory device includes altering a performance characteristic of the memory device in response to the memory device experiencing a demand for bandwidth above a threshold. Altering the performance characteristic increases a rate at which the memory device writes data. | 02-02-2012 |
20120113706 | MEMRISTORS BASED ON MIXED-METAL-VALENCE COMPOUNDS - A memristor ( | 05-10-2012 |
20120120714 | MEMORY RESISTOR HAVING MULTI-LAYER ELECTRODES - Methods and means related to memory resistors are provided. A memristor includes two multi-layer electrodes and an active material layer. One multi-layer electrode forms an Ohmic contact region with the active material layer. The other multi-layer electrode forms a Schottky barrier layer with the active material layer. The active material layer is subject to oxygen vacancy profile reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events. | 05-17-2012 |
20120127780 | MEMORY RESISTOR ADJUSTMENT USING FEEDBACK CONTROL - Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings. | 05-24-2012 |
20120223286 | ELECTROFORMING-FREE NANOSCALE SWITCHING DEVICE - A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less. | 09-06-2012 |
20130009128 | NANOSCALE SWITCHING DEVICE - A nanoscale switching device has an active region containing a switching material. The switching device has a first electrode and a second electrode with nanoscale widths, and the active region is disposed between the first and second electrodes. A protective cladding layer surrounds the active region. The protective cladding layer is formed of a cladding material unreactive to the switching material. An interlayer isolation layer formed of a dielectric material is disposed between the first and second electrodes and outside the protective cladding layer. | 01-10-2013 |
20130026440 | NANOSCALE SWITCHING DEVICES WITH PARTIALLY OXIDIZED ELECTRODES - A nanoscale switching device is provided. The device comprises: a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region having a non-conducting portion comprising an electronically semiconducting or nominally insulating and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field and a source portion that acts as a source or sink for the dopants; and an oxide layer either formed on the first electrode, between the first electrode and the active region or formed on the second electrode, between the second electrode and the active region. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided. | 01-31-2013 |
20130112934 | NANOSCALE SWITCHING DEVICE - A nanoscale switching device has an active region disposed between two electrodes of nanoscale widths. The active region contains a switching material that carries mobile ionic dopants capable of being transported over the active region under an electric field to change a resistive state of the device. The switching material further carries immobile ionic dopants for inhibiting clustering of the mobile ionic dopants caused by switching cycles of the device. The immobile ionic dopants have a charge opposite in polarity to the charge of the mobile ionic dopants, and are less mobile under the electric field than the mobile ion dopants. | 05-09-2013 |
20130168629 | NANOSCALE SWITCHING DEVICE - A nanoscale switching device comprises a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region containing a switching material; an area within the active region that constrains current flow between the first electrode and the second electrode to a central portion of the active region; and an interlayer dielectric layer formed of a dielectric material and disposed between the first and second electrodes outside the active region. A nanoscale crossbar array and method of forming the nanoscale switching device are also disclosed. | 07-04-2013 |