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Gilberto Morales, Arlington US

Gilberto Morales, Arlington, TX US

Patent application numberDescriptionPublished
20090007681SMALL GAUGE PRESSURE SENSOR USING WAFER BONDING AND ELECTROCHEMICAL ETCH STOPPING - A gauge pressure sensor apparatus and a method of forming the same. A constraint wafer can be partially etched to set the diaphragm size, followed by bonding to a top wafer. The thickness of the top wafer is either the desired diaphragm thickness or is thinned to the desired thickness after bonding. The bonding of top wafer and constraint wafer enables electrochemical etch stopping. This allows the media conduit to be etched through the back of the constraint wafer and an electrical signal produced when the etching reaches the diaphragm. The process prevents the diaphragm from being over-etched. The invention allows the die size to be smaller than die where the diaphragm size is set by etching from the back side.01-08-2009
20090096040Sensor geometry for improved package stress isolation - The sensor geometry for improved package stress isolation is disclosed. A counterbore on the backing plate improves stress isolation properties of the sensor. The counterbore thins the wall of the backing plate maintaining the contact area with the package. The depth and diameter of the counterbore can be adjusted to find geometry for allowing the backing plate to absorb more package stresses. Thinning the wall of the backing plate make it less rigid and allows the backing plate to absorb more of the stresses produced at the interface with the package. The counterbore also keeps a large surface area at the bottom of the backing plate creating a strong bond with the package.04-16-2009
20090206424HALL-EFFECT DEVICE WITH MERGED AND/OR NON-MERGED COMPLEMENTARY STRUCTURE - A Hall-effect device with a merged and/or non-merged complementary structure in order to cancel stress induced offsets includes an n-type epitaxial Hall element and a p-type Hall element. The p-type Hall element can be implanted directly on top of the n-type epitaxial Hall element. The merged Hall elements can be biased in parallel to provide a zero-bias depletion layer throughout for isolation. The output of the p-type Hall element can be connected to the geometrically corresponding output of the n-type epitaxial Hall element through a suitable resistance. The output signal can be taken at the outputs of the n-type element. The Hall-effect device can be constructed utilizing standard processes.08-20-2009
20090288492MEDIA ISOLATED DIFFERENTIAL PRESSURE SENSOR WITH CAP - A differential pressure sensor includes two pressure ports for allowing media to pass into contact with both the top and bottom sides of the diaphragm. A silicon pressure sensor die can be attached between the pressure ports using die attach materials for sensing a differential pressure between the media to evaluate media differential pressure. A cap with an opening can be placed on topside of a diaphragm formed in the silicon pressure die. The silicon pressure die can include die bond pads that can be electrically connected to the diaphragm to output electrical signals. The cap can seal the die bond pads from the harsh media and route the electrical signals therein. Media can pass through the opening in the cap such that a media path to the top of the diaphragm is not exposed to the die bond pads of the silicon pressure die to ensure long-term sensor reliability.11-26-2009
20100018324PRESSURE-BASED FLUID FLOW SENSOR - A volumetric fluid flow sensor (01-28-2010
20100122580FLOW SENSOR APPARATUS AND METHOD WITH MEDIA ISOLATED ELECTRICAL CONNECTIONS - A flow sensor apparatus that utilizes a pressure sensor with media isolated electrical connections. A cap can be attached to topside of the pressure sensor over a diaphragm to protect bond pads and wire bonds from a fluid media. A flow channel can be etched on the cap with an opening and exit on the sides of the cap so that liquid can flow through the flow channel. An inlet port and an outlet port can be attached to the channel's opening and exit to allow for fluid flow over the diaphragm. The flow channel creates a larger pressure over portions of the diaphragm that increases the deflection of the diaphragm, which increases an output signal of the pressure sensor. V-grooves can be created on two sides of the pressure sensor and in the cap to create the channel for the fluid in and out of the cap's cavity.05-20-2010
20100212434FLOW SENSOR APPARATUS AND METHOD WITH MEDIA ISOLATED ELECTRICAL CONNECTIONS - A flow sensor apparatus that utilizes a pressure sensor with media isolated electrical connections. A cap can be attached to topside of the pressure sensor over a diaphragm to protect bond pads and wire bonds from a fluid media. A flow channel can be etched on the cap with an opening and exit on the sides of the cap so that liquid can flow through the flow channel. An inlet port and an outlet port can be attached to the channel's opening and exit to allow for fluid flow over the diaphragm. The flow channel creates a larger pressure over portions of the diaphragm that increases the deflection of the diaphragm, which increases an output signal of the pressure sensor. V-grooves can be created on two sides of the pressure sensor and in the cap to create the channel for the fluid in and out of the cap's cavity.08-26-2010
20100301435SENSOR GEOMETRY FOR IMPROVED PACKAGE STRESS ISOLATION - The sensor geometry for improved package stress isolation is disclosed. A counterbore on the backing plate improves stress isolation properties of the sensor. The counterbore thins the wall of the backing plate maintaining the contact area with the package. The depth and diameter of the counterbore can be adjusted to find geometry for allowing the backing plate to absorb more package stresses. Thinning the wall of the backing plate make it less rigid and allows the backing plate to absorb more of the stresses produced at the interface with the package. The counterbore also keeps a large surface area at the bottom of the backing plate creating a strong bond with the package.12-02-2010

Patent applications by Gilberto Morales, Arlington, TX US