Patent application number | Description | Published |
20100059822 | METHOD AND SYSTEM FOR MONOLITHIC INTEGRATION OF PHOTONICS AND ELECTRONICS IN CMOS PROCESSES - Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on a single CMOS wafer with different silicon layer thicknesses. The devices may be fabricated on a semiconductor-on-insulator (SOI) wafer utilizing a bulk CMOS process and/or on a SOI wafer utilizing a SOI CMOS process. The different thicknesses may be fabricated utilizing a double SOI process and/or a selective area growth process. Cladding layers may be fabricated utilizing one or more oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafer. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions. Silicon dioxide or silicon germanium integrated in the CMOS wafer may be utilized as an etch stop layer. | 03-11-2010 |
20110042553 | Method and System for Optoelectronic Receivers Utilizing Waveguide Heterojunction Phototransistors Integrated in a CMOS SOI Wafer - A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (HPTs) integrated in a CMOS SOI wafer are disclosed and may include receiving optical signals via optical fibers operably coupled to a top surface of the chip. Electrical signals may be generated utilizing HPTs that detect the optical signals. The electrical signals may be amplified via voltage amplifiers, or transimpedance amplifiers, the outputs of which may be utilized to bias the HPTs by a feedback network. The optical signals may be coupled into opposite ends of the HPTs. A collector of the HPTs may comprise a silicon layer and a germanium layer, a base may comprise a silicon germanium alloy with germanium composition ranging from 70% to 100%, and an emitter including crystalline or poly Si or SiGe. The optical signals may be demodulated by communicating a mixer signal to a base terminal of the HPTs. | 02-24-2011 |
20110305416 | METHOD AND SYSTEM FOR MULTI-MODE INTEGRATED RECEIVERS - A method and system for multi-mode integrated receivers are disclosed and may include receiving an optical signal from an optical fiber coupled to a chip comprising a photonic circuit. The photonic circuit may comprise an optical coupler, one or more multi-mode optical waveguides, and a detector. The received optical signal may be coupled to a plurality of optical modes in the one or more multi-mode optical waveguides, which are communicated to a detector to generate an electrical signal from the communicated modes. The optical coupler may comprise a grating coupler. The chip may comprise a CMOS chip, and the optical fiber may comprise a single-mode or a multi-mode fiber. The detector may comprise a germanium or silicon-germanium photodiode, and/or a waveguide detector. The optical fiber may be coupled to a top surface of the chip and the multi-mode optical waveguides may comprise rib waveguides. | 12-15-2011 |
20120132993 | Monolithic Integration Of Photonics And Electronics In CMOS Processes - Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on two CMOS wafers with different silicon layer thicknesses for the photonic and electronic devices bonded to at least a portion of each of the wafers together, where a first of the CMOS wafers includes the photonic devices and a second of the CMOS wafers includes the electronic devices. The electrical devices may be coupled to optical devices utilizing through-silicon vias. The different thicknesses may be fabricated utilizing a selective area growth process. Cladding layers may be fabricated utilizing oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafers. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions. | 05-31-2012 |
20120135566 | Monolithic Integration Of Photonics And Electronics In CMOS Processes - Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on two CMOS wafers with different silicon layer thicknesses for the photonic and electronic devices with at least a portion of each of the wafers bonded together, where a first of the CMOS wafers includes the photonic devices and a second of the CMOS wafers includes the electronic devices. The electrical devices may be coupled to optical devices utilizing through-silicon vias. The different thicknesses may be fabricated utilizing a selective area growth process. Cladding layers may be fabricated utilizing oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafers. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions. | 05-31-2012 |
20120301149 | Method And System For Hybrid Integration Of Optical Communication Systems - Methods and systems for hybrid integration of optical communication systems are disclosed and may include receiving continuous wave (CW) optical signals in a silicon photonics die (SPD) from an optical source external to the SPD. The received CW optical signals may be processed based on electrical signals received from an electronics die bonded to the SPD via metal interconnects. Modulated optical signals may be received in the SPD from optical fibers coupled to the SPD. Electrical signals may be generated in the SPD based on the received modulated optical signals and communicated to the electronics die via the metal interconnects. The CW optical signals may be received from an optical source assembly coupled to the SPD and/or from one or more optical fibers coupled to the SPD. The received CW optical signals may be processed utilizing one or more optical modulators, which may comprise Mach-Zehnder interferometer modulators. | 11-29-2012 |
20140084144 | METHOD AND SYSTEM FOR OPTOELECTRONIC RECEIVERS UTILIZING WAVEGUIDE HETEROJUNCTION PHOTOTRANSISTORS INTEGRATED IN A CMOS SOI WAFER - A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (HPTs) integrated in a CMOS SOI wafer are disclosed and may include receiving optical signals via a top surface of a photonically-enabled CMOS chip; and generating electrical signals in the chip utilizing one or more HPTs that detect optical signals. The HPTs may comprise a base and a split collector, with the split collector comprising a silicon-on-insulator (SOI) layer and a germanium layer. The thickness of the germanium layer may be such that carriers in the base do not interact with defects from an interface between the SOI layer and the germanium layer. The electrical signals may be amplified by amplifiers, the outputs of which may be utilized to bias the HPTs by a feedback network. An electrode formed longitudinally in the direction of light travel through the HPTs may bias the base of the HPTs. | 03-27-2014 |
20140286647 | Method And System For A Low-Voltage Integrated Silicon High-Speed Modulator - Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias. | 09-25-2014 |