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Gi Yeon
Gi Yeon Nam, Seognam-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100140656 | Semiconductor Light-Emitting Device - The present disclosure relates to a semiconductor light-emitting device generating light by recombination of electrons and holes. The semiconductor light-emitting device includes: a first bonding electrode and a second bonding electrode supplying the current for the recombination of the electrons and holes; a first branch electrode and a second branch electrode extended from the first bonding electrode; and a third branch electrode extended from the second bonding electrode, located between the first branch electrode and the second branch electrode, and having a first interval from the first branch electrode and a second interval smaller than the first interval from the second branch electrode. The second branch electrode is located farther from the center of the light-emitting device than the first branch electrode, and the second branch electrode is located farther from the center of the light-emitting device than the third branch electrode. | 06-10-2010 |
Gi Yeon Nam, Gyunggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20090020771 | III-Nitride Semiconductor Light Emitting Device And Method For Manufacturing The Same - The present disclosure relates to an III-nitride compound semiconductor light emitting device and a method of manufacturing the same. The III-nitride compound semiconductor light emitting device includes a substrate with a groove formed therein, a plurality of nitride compound semiconductor layers being grown on the substrate, and including an active layer for generating light by recombination of electron and hole, and an opening formed on the groove along the plurality of nitride compound semiconductor layers. | 01-22-2009 |
| 20090166662 | III-Nitride Semiconductor Light Emitting Device - The present disclosure relates to a III-nitride semiconductor light emitting device comprising: a plurality of III-nitride semiconductor layers with an active layer generating light by recombination of holes and electrons; and a branch electrode provided with an arm extended from the p-side bonding pad toward the n-side electrode and two fingers branched off toward the n-side electrode from the arm. | 07-02-2009 |
| 20090283789 | Semiconductor Light Emitting Device - The present disclosure relates to a semiconductor light emitting device which generates light by recombination of electrons and holes, and which includes: a first finger electrode for supplying one of the electrons and holes, a second finger electrode supplying the other of the electrons and holes, and spaced apart from the first finger electrode at a first interval; and a third finger electrode electrically connected to the first finger electrode, and spaced apart from the second finger electrode at a second interval which is smaller than the first interval. | 11-19-2009 |
Gi Yeon Nam, Kyunggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20080315240 | III-Nitride Semiconductor light Emitting Device - The present disclosure relates to an III-nitride semiconductor light emitting device, particularly, an electrode structure thereof. The III-nitride semiconductor light emitting device includes a substrate, a plurality of III-nitride semiconductor layers grown on the substrate, and composed of a first III-nitride semiconductor layer with first conductivity, a second III-nitride semiconductor layer with second conductivity different from the first conductivity, and an active layer positioned between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer, for generating light by recombination of electrons and holes, and a hole passing through the substrate and the plurality of III-nitride semiconductor layers. | 12-25-2008 |