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| 20090076989 | AUTOMATED CLASSIFICATION ALGORITHM COMPRISING AT LEAST ONE INPUT-INVARIANT PART - A classification algorithm is separated into one or more input-invariant parts and one or more input-dependent classification parts. The input-invariant parts of the classification algorithm capture the underlying and unchanging relationships between the plurality of data elements being operated upon by the classification algorithm, whereas the one or more classification parts embody the probabilistic labeling of the data elements according to the various classifications. For any given iteration, a user's input is used to modify at least one classification part of the algorithm. Recalculated classification parts (i.e., updated classification results) are determined based on computationally simple combinations of the one or more modified classification parts and the one or more input-invariant parts. Preferably, a graphical user interface is used to solicit user input. In this manner, wait times between user feedback iterations can be dramatically reduced, thereby making application of active learning to classification tasks a practical reality. | 03-19-2009 |
| 20100162402 | DATA ANONYMIZATION BASED ON GUESSING ANONYMITY - Privacy is defined in the context of a guessing game based on the so-called guessing inequality. The privacy of a sanitized record, i.e., guessing anonymity, is defined by the number of guesses an attacker needs to correctly guess an original record used to generate a sanitized record. Using this definition, optimization problems are formulated that optimize a second anonymization parameter (privacy or data distortion) given constraints on a first anonymization parameter (data distortion or privacy, respectively). Optimization is performed across a spectrum of possible values for at least one noise parameter within a noise model. Noise is then generated based on the noise parameter value(s) and applied to the data, which may comprise real and/or categorical data. Prior to anonymization, the data may have identifiers suppressed, whereas outlier data values in the noise perturbed data may be likewise modified to further ensure privacy. | 06-24-2010 |
| 20100169375 | Entity Assessment and Ranking - General entity retrieval and ranking is described. A first set of documents is retrieved from one or more document repositories based on a query formed according to the topic. The first set of documents is characterized based on its first set of metadata values. One or more candidate entities are identified based on the first set of documents and the original query is thereafter augmented according to a candidate entity. The second set of documents resulting from the augmented query is then characterized in a similar manner. For each candidate entity, the first and second document set characterizations are compared to determine their degree of similarity. Increasingly similar document set characterizations indicates that the candidate entity is increasingly relevant to the original query. Repeating this process for each of the one or more candidate entities can give rise to rankings according to the respective degrees of similarity. | 07-01-2010 |
| 20110054925 | CLAIMS ANALYTICS ENGINE - Methods and systems for processing claims (e.g., healthcare insurance claims) are described. For example, prior to payment of an unpaid claim, a prediction is made as to whether or not an attribute specified in the claim is correct. Depending on the prediction results, the claim can be flagged for an audit. Feedback from the audit can be used to update the prediction models in order to refine the accuracy of those models. | 03-03-2011 |
| 20110246467 | EXTRACTION OF ATTRIBUTES AND VALUES FROM NATURAL LANGUAGE DOCUMENTS - One or more classification algorithms are applied to at least one natural language document in order to extract both attributes and values of a given product. Supervised classification algorithms, semi-supervised classification algorithms, unsupervised classification algorithms or combinations of such classification algorithms may be employed for this purpose. The at least one natural language document may be obtained via a public communication network. Two or more attributes (or two or more values) thus identified may be merged to form one or more attribute phrases or value phrases. Once attributes and values have been extracted in this manner, association or linking operations may be performed to establish attribute-value pairs that are descriptive of the product. In a presently preferred embodiment, an (unsupervised) algorithm is used to generate seed attributes and values which can then support a supervised or semi-supervised classification algorithm. | 10-06-2011 |
| 20110307429 | AUTOMATED CLASSIFICATION ALGORITHM COMPRISING AT LEAST ONE INPUT-INVARIANT PART - A classification algorithm is separated into one or more input-invariant parts and one or more input-dependent classification parts. Classifiable electronic data is obtained via a communication network. Using the classification algorithm, classifications of a plurality of data elements in the classifiable data are identified, where the at least one classification part incorporates user input concerning classification of at least one data element of the plurality of data elements. | 12-15-2011 |
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| 20100153187 | DETERMINATION OF A PROFILE OF AN ENTITY BASED ON PRODUCT DESCRIPTIONS - Relative to a given product or products, one or more attributes and, for each attribute, a plurality of possible attribute values, are defined. For a given product and attribute, one or more descriptions of the product are obtained and analyzed to determine the correspondence of the description(s), and hence the product itself, to each of the plurality of possible attribute values. In one embodiment, this analysis is based on previously-labeled training data. A knowledge base can be populated with information identifying the products and their correspondence to the plurality of possible attribute values for each attribute. This technique may be used to develop a profile of an entity, which in turn may be used to develop appropriate marketing messages or recommendations for other products. | 06-17-2010 |
| 20110208569 | SYSTEM FOR INDIVIDUALIZED CUSTOMER INTERACTION - A method and system for using individualized customer models when operating a retail establishment is provided. The individualized customer models may be generated using statistical analysis of transaction data for the customer, thereby generating sub-models and attributes tailored to customer. The individualized customer models may be used in any aspect of a retail establishment's operations, ranging from supply chain management issues, inventory control, promotion planning (such as selecting parameters for a promotion or simulating results of a promotion), to customer interaction (such as providing a shopping list or providing individualized promotions). | 08-25-2011 |
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| 20080242037 | Semiconductor device having self-aligned epitaxial source and drain extensions - A method of forming a transistor with self-aligned source and drain extensions in close proximity to a gate dielectric layer of the transistor comprises forming a gate stack on a substrate, implanting a dopant into regions of the substrate adjacent to the gate stack, wherein the dopant increases the etch rate of the substrate and defines the location of the source and drain extensions, forming a pair of spacers on laterally opposite sides of the gate stack that are disposed atop the doped regions of the substrate, etching the doped regions of the substrate and portions of the substrate subjacent to the doped regions, wherein an etch rate of the doped regions is higher than an etch rate of the portions of the substrate subjacent to the doped regions, and depositing a silicon-based material in the etched portions of the substrate. | 10-02-2008 |
| 20090065808 | SEMICONDUCTOR TRANSISTOR HAVING A STRESSED CHANNEL - A process is described for manufacturing an improved PMOS semiconductor transistor. Recesses are etched into a layer of epitaxial silicon. Source and drain films are deposited in the recesses. The source and drain films are made of an alloy of silicon and germanium. The alloy is epitaxially deposited on the layer of silicon. The alloy thus has a lattice having the same structure as the structure of the lattice of the layer of silicon. However, due to the inclusion of the germanium, the lattice of the alloy has a larger spacing than the spacing of the lattice of the layer of silicon. The larger spacing creates a stress in a channel of the transistor between the source and drain films. The stress increases I | 03-12-2009 |
| 20090152589 | Systems And Methods To Increase Uniaxial Compressive Stress In Tri-Gate Transistors - A transistor structure that increases uniaxial compressive stress on the channel region of a tri-gate transistor comprises at least two semiconductor bodies formed on a substrate, each semiconductor body having a pair of laterally opposite sidewalls and a top surface, a common source region formed on one end of the semiconductor bodies, wherein the common source region is coupled to all of the at least two semiconductor bodies, a common drain region formed on another end of the semiconductor bodies, wherein the common drain region is coupled to all of the at least two semiconductor bodies, and a common gate electrode formed over the at least two semiconductor bodies, wherein the common gate electrode provides a gate electrode for each of the at least two semiconductor bodies and wherein the common gate electrode has a pair of laterally opposite sidewalls that are substantially perpendicular to the sidewalls of the semiconductor bodies. | 06-18-2009 |
| 20100102356 | Semiconductor transistor having a stressed channel - A process is described for manufacturing an improved PMOS semiconductor transistor. Recesses are etched into a layer of epitaxial silicon. Source and drain films are deposited in the recesses. The source and drain films are made of an alloy of silicon and germanium. The alloy is epitaxially deposited on the layer of silicon. The alloy thus has a lattice having the same structure as the structure of the lattice of the layer of silicon. However, due to the inclusion of the germanium, the lattice of the alloy has a larger spacing than the spacing of the lattice of the layer of silicon. The larger spacing creates a stress in a channel of the transistor between the source and drain films. The stress increases I | 04-29-2010 |
| 20100102401 | Semiconductor transistor having a stressed channel - A process is described for manufacturing an improved PMOS semiconductor transistor. Recesses are etched into a layer of epitaxial silicon. Source and drain films are deposited in the recesses. The source and drain films are made of an alloy of silicon and germanium. The alloy is epitaxially deposited on the layer of silicon. The alloy thus has a lattice having the same structure as the structure of the lattice of the layer of silicon. However, due to the inclusion of the germanium, the lattice of the alloy has a larger spacing than the spacing of the lattice of the layer of silicon. The larger spacing creates a stress in a channel of the transistor between the source and drain films. The stress increases IDSAT and I | 04-29-2010 |
| 20110147816 | SPIN TORQUE MAGNETIC INTEGRATED CIRCUITS AND DEVICES THEREFOR - Spin torque magnetic integrated circuits and devices therefor are described. A spin torque magnetic integrated circuit includes a first free ferromagnetic layer disposed above a substrate. A non-magnetic layer is disposed above the first free ferromagnetic layer. A plurality of write pillars and a plurality of read pillars are included, each pillar disposed above the non-magnetic layer and including a fixed ferromagnetic layer. | 06-23-2011 |
| 20110147828 | SEMICONDUCTOR DEVICE HAVING DOPED EPITAXIAL REGION AND ITS METHODS OF FABRICATION - Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial cap layer improves electron mobility at the channel region, reduces short channel effects and decreases parasitic resistance. | 06-23-2011 |
| 20110147842 | MULTI-GATE SEMICONDUCTOR DEVICE WITH SELF-ALIGNED EPITAXIAL SOURCE AND DRAIN - A channel strained multi-gate transistor with low parasitic resistance and method of manufacturing the same. A gate stack may be formed over a semiconductor fin having a gate-coupled sidewall height (H | 06-23-2011 |
| 20110147848 | Multiple transistor fin heights - The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming transistor fins of differing heights to obtain a performance improvement for a given type of integrated circuit within the microelectronic device. | 06-23-2011 |
| 20110156107 | Self-aligned contacts - A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations. | 06-30-2011 |
