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Ghandehari
Hamidreza Ghandehari, Salt Lake City, UT US
| Patent application number | Description | Published |
|---|---|---|
| 20100099644 | HPMA - DOCETAXEL OR GEMCITABINE CONJUGATES AND USES THEREFORE - Disclosed are water-soluble compositions of gemcitabine and docetaxel formed by conjugating the gemcitabine or docetaxel to a water-soluble polymer such as N-2-hydroxypropyl methacrylamide (HPMA). Also disclosed are methods of using the compositions of the invention for the treatment of cancer. | 04-22-2010 |
Kouros Ghandehari, Santa Clara, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100009536 | MULTILAYER LOW REFLECTIVITY HARD MASK AND PROCESS THEREFOR - A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multilayer anti-reflective coating structure can be utilized to form gate stacks comprised of polysilicon and a dielectric layer. A photoresist is applied above the multilayer anti-reflective coating which can include silicon oxynitride (SiON) and silicon rich nitride (SiRN). | 01-14-2010 |
Kouros Ghandehari, Fremont, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090294969 | SEMICONDUCTOR CONTACT FORMATION SYSTEM AND METHOD - The present invention is a semiconductor contact formation system and method. Contact insulation regions are formed with multiple etch stop sublayers that facilitate formation of contacts. This contact formation process provides relatively small substrate connections while addressing critical lithographic printing limitation concerns in forming contact holes with small dimensions. In one embodiment, a multiple etch stop insulation layer comprising multiple etch stop layers is deposited. A contact region is formed in the multiple etch stop insulation layer by selectively removing (e.g., etching) some of the multiple etch stop insulation layer. In one embodiment, a larger portion of the multiple etch stop insulation layer is removed close to the metal layer and a smaller portion is removed closer to the substrate. The different contact region widths are achieved by performing multiple etching processes controlled by the multiple etch stop layers in the multiple etch stop insulation layer and spacer formation to shrink contact size at a bottom portion. Electrical conducting material (e.g., tungsten) is deposited in the contact region. | 12-03-2009 |