| Patent application number | Description | Published |
|---|
| 20080224217 | MUGFET SWITCH - An electronic circuit on a semiconductor substrate having isolated multiple field effect transistor circuit blocks is disclosed. In some embodiment, an apparatus includes a substrate, a first semiconductor circuit formed above the substrate, a second semiconductor circuit formed above the substrate, and a MuGFET device overlying the substrate and electrically coupled to the first semiconductor circuit and the second semiconductor circuit, wherein the MuGFET device provides a signal path between the first semiconductor circuit and the second semiconductor circuit in response to an input signal. | 09-18-2008 |
| 20080303593 | MUGFET CIRCUIT FOR INCREASING OUTPUT RESISTANCE - In an embodiment, an apparatus includes a MuGFET device coupled to a reference source, the MuGFET device configured to receive an input signal at a gate thereof; and Also includes a further MuGFET device coupled between the MuGFET device and a first terminal of a load, a second terminal of the load coupled to a further reference source, the further MuGFET device configured to receive a further input signal at a gate thereof, and wherein the MuGFET device and the further MuGFET device are disposed above a substrate and configured to provide an output signal at the first terminal of the load. | 12-11-2008 |
| 20090050973 | INTEGRATED CIRCUIT INCLUDING A FIRST CHANNEL AND A SECOND CHANNEL - An integrated circuit is disclosed. In one embodiment, the integrated circuit includes a first area and a second area. The first area is stress engineered to provide enhanced mobility in a first channel that has a first width. The second area is stress engineered to provide enhanced mobility in a second channel that has a second width. The first channel and the second channel provide a combined current that is greater than a single current provided via a single channel having a single width that is substantially equal to the sum of the first width and the second width. | 02-26-2009 |
| 20090250763 | INTEGRATED CIRCUIT INCLUDING A FIRST CHANNEL AND A SECOND CHANNEL - An integrated circuit is disclosed. In one embodiment, the integrated circuit includes a first area and a second area. The first area is stress engineered to provide enhanced mobility in a first channel that has a first width. The second area is stress engineered to provide enhanced mobility in a second channel that has a second width. The first channel and the second channel provide a combined current that is greater than a single current provided via a single channel having a single width that is substantially equal to the sum of the first width and the second width. | 10-08-2009 |
| 20110043293 | DeMOS VCO - The present disclosure relates voltage controlled oscillators (VCO) and digitally controlled oscillators (DCO). In one implementation, a VCO is implemented with drain extended MOS transistors (DeMOS). In another implementation, a DCO is implemented with DeMOS devices. | 02-24-2011 |
| 20110043294 | DeMOS DCO - The present disclosure relates voltage controlled oscillators (VCO) and digitally controlled oscillators (DCO). In one implementation, a VCO is implemented with drain extended MOS transistors (DeMOS). In another implementation, a DCO is implemented with DeMOS devices. | 02-24-2011 |
