Patent application number | Description | Published |
20090013930 | GAS DISTRIBUTOR WITH PRE-CHAMBERS DISPOSED IN PLANES - A gas distributor for a CVD or OVPD reactor comprises two or more gas volumes ( | 01-15-2009 |
20090025639 | GAS INLET ELEMENT FOR A CVD REACTOR - The invention relates to a gas inlet element ( | 01-29-2009 |
20090107401 | DEVICE FOR VAPORIZING CONDENSED SUBSTANCES - The invention relates to a device for the vaporisation of condensed (solid or liquid) materials, in particular, of starting materials for OLED production, comprising a container ( | 04-30-2009 |
20090178620 | Process for Depositing Thin Layers on a Substrate in a Process Chamber of Adjustable Height - An apparatus for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of the process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of the chamber consisting of a gas inlet element. The cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through the gas exit surface. The height of the process chamber is variable before the beginning of the deposition process and/or during the deposition process, which height is defined by the distance between the substrate bearing surface and the gas exit surface. | 07-16-2009 |
20090283040 | DEVICE FOR TEMPERATURE-CONTROLLED ACCOMMODATION OF A CONTAINER - The invention relates to a device for the tempered storage of a container ( | 11-19-2009 |
20100012034 | Process And Apparatus For Depositing Semiconductor Layers Using Two Process Gases, One Of Which is Preconditioned - A method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder, is provided. The layer includes of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy. | 01-21-2010 |
20120149212 | CVD METHOD AND CVD REACTOR - The invention relates to a device and a method for depositing semiconductor layers, in particular made of a plurality of components on one or more substrates ( | 06-14-2012 |
20120156396 | CVD REACTOR - The invention relates to a CVD reactor comprising a heatable body ( | 06-21-2012 |
20120263877 | CVD Reactor Having Gas Inlet Zones that Run in a Strip-Like Manner and a Method for Deposition of a Layer on a Substrate in a CVD Reactor of this Kind - The invention relates to a CVD reactor having a process chamber ( | 10-18-2012 |
20130040054 | COATING DEVICE AND METHOD FOR OPERATING A COATING DEVICE HAVING A SHIELDING PLATE - A device for treating a substrate ( | 02-14-2013 |