| Patent application number | Description | Published |
|---|
| 20090174428 | PROGRAMMABLE ELEMENT, AND MEMORY DEVICE OR LOGIC CIRCUIT - A multi-terminal programmable element. The programmable element includes a source electrode and a drain electrode on a base. The programmable element includes reference voltage contact that is not in contact with the source or drain electrode. The base includes a transition-metal oxide with oxygen vacancies for drifting under an applied electric field. Further, materials of the source electrode and the base are selected such that an interface of a source and/or drain electrode material and the transition metal oxide base material forms an energy barrier for electron injection from the electrode into the base material. The energy barrier has a height that depends on an oxygen vacancy concentration of the base material. Four non-volatile states are programmable into the programmable element. | 07-09-2009 |
| 20090174430 | LOGIC ELEMENT, AND INTEGRATED CIRCUIT OR FIELD PROGRAMMABLE GATE ARRAY - A complementary logic element including first and second transistor elements. The first and second gate electrodes of the two transistor elements are electrically parallel to form a common gate. Both the coupling layers of the first and the second transistor element include a resistance switching material, a conductivity of which may be altered by causing an ion concentration to alter if an electrical voltage signal of an appropriate polarity is applied. The first and second transistor elements also include an ion conductor layer that is capable of accepting ions from the coupling layer and of releasing ions into the coupling layer. The coupling layers and ion conductor layers are such that the application of an electrical signal of a given polarity to the gate enhances the electrical conductivity of the first coupling layer and diminishes the electrical conductivity of the second, or vice versa. | 07-09-2009 |
| 20090180728 | ELECTRO-OPTICAL DEVICE - An electro-optical device having a non-volatile programmable refractive index. The device includes: a waveguiding structure with waveguiding material, the waveguiding structure defining an optical beam path, where the waveguiding structure includes a transition metal oxide with oxygen vacancies that migrate when exposed to an electric field; and a plurality of electrodes for applying an electric field to a region including the transition metal oxide with oxygen vacancies; where the transition metal oxide and the electrodes are arranged such that under the applied electric field the oxygen vacancies migrate in a direction that has a component which is radial relative to a center of the beam path. Further, there is provided a method for making the electro-optical device, including: fabricating the waveguiding structure; positioning a plurality of electrodes for application of an electric field; and arranging the transition metal oxide and the electrodes. | 07-16-2009 |
| 20090275168 | PHASE CHANGE MATERIAL WITH FILAMENT ELECTRODE - The present invention, in one embodiment, provides a memory device that includes a phase change memory cell; a first electrode; and a layer of filamentary resistor material positioned between the phase change memory cell and the first electrode, wherein at least one bistable conductive filamentary pathway is present in at least a portion of the layer of filamentary resistor material that provides electrical communication between the phase change memory cell and the first electrode. | 11-05-2009 |
| 20090286350 | Nonvolatile Memory Cell Comprising a Chalcogenide and a Transition Metal Oxide - A memory cell for use in integrated circuits comprises a chalcogenide feature and a transition metal oxide feature. Both the chalcogenide feature and transition metal oxide feature each have at least two stable electrical resistance states. At least two bits of data can be concurrently stored in the memory cell by placing the chalcogenide feature into one of its stable electrical resistance states and by placing the transition metal oxide feature into one of its stable electrical resistance states. | 11-19-2009 |
| 20090302886 | PROGRAMMABLE DEVICE - A programmable device including a source-drain-gate structure. The device includes two programming electrodes and an antiferromagnetic multiferroic material between the two programming electrodes for switching the spontaneous polarization between a first spontaneous polarization direction and a second spontaneous polarization direction. The programmable device further includes a ferromagnetic material, which is in immediate contact with the multiferroic material. Magnetization of the ferromagnetic material is switchable by a transition between the first switching state and the second switching state of the multiferroic material by an exchange coupling between electronic states of the multiferroic material and the ferromagnetic material. The programmable device also includes means for determining a direction of the magnetization of the ferromagnetic material. A spin valve effect is used for causing an electrical resistance between the source and the drain electrode. | 12-10-2009 |
| 20100195381 | SWITCHABLE ELEMENT - A switchable element. The element includes a source electrode, a drain electrode, a conducting channel between the source electrode and the drain electrode, and a gate with multiferroic material being switchable, by application of an electrical signal to the gate, between a first switching state with a first spontaneous polarization direction and a second switching state with a second spontaneous polarization direction. The conducting channel is magnetoresistive, and a magnetic field strength at the conducting channel in the first switching state is different than a magnetic field strength in the second switching state, whereby a current-voltage characteristic of the conducting channel is dependent on the switching state of the multiferroic material. | 08-05-2010 |
| 20100296788 | ELECTRO-OPTICAL MEMORY CELL - An electro-optical memory cell having a non-volatile programmable refractive index and a method of making. The memory cell includes: a waveguiding structure having a transition metal oxide with oxygen vacancies; a plurality of electrodes for applying an electrical field; and an optical detector for detecting a state of the memory cell. The method includes: fabricating a waveguiding structure having a transition metal oxide with oxygen vacancies; positioning a plurality of electrodes for application of an electric field; arranging the transition metal oxide and the electrodes such that when an electric field is applied, the oxygen vacancies migrate in a direction that has a component which is radial relative to a center of the beam path; applying the electric field thereby programming the refractive index to set a state of the memory cell; and detecting the state of the memory cell using an optical detector. | 11-25-2010 |
| 20110149648 | PROGRAMMABLE DEVICE - A programmable device including a source-drain-gate structure. The device includes two programming electrodes and an antiferromagnetic multiferroic material between the two programming electrodes for switching the spontaneous polarization between a first spontaneous polarization direction and a second spontaneous polarization direction. The programmable device further includes a ferromagnetic material, which is in immediate contact with the multiferroic material. Magnetization of the ferromagnetic material is switchable by a transition between the first switching state and the second switching state of the multiferroic material by an exchange coupling between electronic states of the multiferroic material and the ferromagnetic material. The programmable device also includes means for determining a direction of the magnetization of the ferromagnetic material. A spin valve effect is used for causing an electrical resistance between the source and the drain electrode. | 06-23-2011 |
