| Patent application number | Description | Published |
|---|
| 20080283861 | Power light emitting die package with reflecting lens and the method of making the same - A light emitting die package and a method of manufacturing the die package are disclosed. The die package includes a leadframe, at least one light emitting device (LED), a molded body, and a lens. The leadframe includes a plurality of leads and has a top side and a bottom side. A portion of the leadframe defines a mounting pad. The LED device is mounted on the mounting pad. The molded body is integrated with portions of the leadframe and defines an opening on the top side of the leadframe, the opening surrounding the mounting pad. The molded body further includes latches on the bottom side of the leadframe. The lens is coupled to the molded body. A composite lens is used as both reflector and imaging tool to collect and direct light emitted by LED(s) for desired spectral and luminous performance. | 11-20-2008 |
| 20090026487 | LIGHT-EMITTING DEVICES HAVING AN ACTIVE REGION WITH ELECTRICAL CONTACTS COUPLED TO OPPOSING SURFACES THEREOF AND METHODS OF FORMING THE SAME - A light-emitting device includes a substrate having first and second opposing surfaces, an active region on the first surface of the substrate, a via in the substrate between the first and second opposing surfaces, a contact plug in the via, a first electrical contact on the active region, and a second electrical contact adjacent to the second surface that is coupled to the active region by the contact plug. The via and the first electrical contact are offset with respect to each other relative to an axis that is substantially perpendicular to the first and second surfaces of the substrate. | 01-29-2009 |
| 20090134421 | SOLID METAL BLOCK SEMICONDUCTOR LIGHT EMITTING DEVICE MOUNTING SUBSTRATES AND PACKAGES - A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces. The first metal face includes an insulating layer and a conductive layer on the insulating layer. The conductive layer is patterned to provide first and second conductive traces that connect to a semiconductor light emitting device. The second metal face may include heat sink fins therein. A flexible film including an optical element, such as a lens, also may be provided, overlying the semiconductor light emitting device. | 05-28-2009 |
| 20090159918 | SEMICONDUCTOR LIGHT EMITTING DEVICES AND SUBMOUNTS AND METHODS FOR FORMING THE SAME - A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member and methods for forming the same are also provided. | 06-25-2009 |
| 20090250710 | SEMICONDUCTOR LIGHT EMITTING DEVICES INCLUDING MULTIPLE SEMICONDUCTOR LIGHT EMITTING ELEMENTS IN A SUBSTRATE CAVITY - Semiconductor light emitting devices include a substrate having a cavity, multiple light emitting devices in the cavity and remote phosphor layers, scattering layers and/or lenses for the light emitting devices. | 10-08-2009 |
| 20090309124 | LED Fabrication via Ion Implant Isolation - A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. | 12-17-2009 |
| 20100133555 | SOLID METAL BLOCK SEMICONDUCTOR LIGHT EMITTING DEVICE MOUNTING SUBSTRATES - A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces. The first metal face includes an insulating layer and a conductive layer on the insulating layer. The conductive layer is patterned to provide first and second conductive traces that connect to a semiconductor light emitting device. The second metal face may include heat sink fins therein. A flexible film including an optical element, such as a lens, also may be provided, overlying the semiconductor light emitting device. | 06-03-2010 |
| 20110062478 | SEMICONDUCTOR LIGHT EMITTING DEVICES INCLUDING FLEXIBLE UNITARY FILM HAVING AN OPTICAL ELEMENT THEREIN - A semiconductor light emitting device includes a substrate having a face, a flexible unitary film that includes an optical element therein on the face, and a semiconductor light emitting element between the substrate and the flexible film that is configured to emit light through the optical element. The flexible unitary film extends conformally on the face of the substrate outside the semiconductor light emitting element and also extends on the semiconductor light emitting element. | 03-17-2011 |
| 20110068362 | Light-Emitting Devices Having Multiple Encapsulation Layers With at Least One of the Encapsulation Layers Including Nanoparticles and Methods of Forming the Same - A light-emitting device includes an active region that is configured to emit light responsive to a voltage applied thereto. A first encapsulation layer at least partially encapsulates the active region and includes a matrix material and nanoparticles, which modify at least one physical property of the first encapsulation layer. A second encapsulation layer at least partially encapsulates the first encapsulation layer. | 03-24-2011 |
