| Patent application number | Description | Published |
|---|
| 20090010033 | ACTIVE DIODE - An active diode is disclosed. One embodiment provides a method for operating a device. The electronic device includes a transistor connected between a first and a second connection of the electronic device; a control device coupled to a control connection of the transistor; and an energy storage device coupled to the control device. | 01-08-2009 |
| 20090086512 | Driving a primary-side switch and a secondary-side rectifier element in a switching converter - An apparatus, comprising a transformer comprising a first winding and a second winding; a first switch coupled to the first winding and configured to alternate between an off state and an on state in response to a pulsed first signal; a rectifier coupled to the second winding and configured to alternate between an off state and an on state in response to a pulsed second signal; and a drive circuit configured to generate the first and second signals such that the first switch and the rectifier are switched to the on state in a temporally offset relation with each other. | 04-02-2009 |
| 20090140707 | Circuit for an Active Diode and Method for Operating an Active Diode - Embodiments of the invention relate to a circuit for an active diode, a method for operating an active diode, and, based thereon, an integrated active diode system, a rectifier, and a system for voltage conversion and/or regulation, comprising at least one transistor by which a current defined as positive from a first connection to a second connection of the transistor can be controlled, and at least one measuring/control circuit (for determining the current by means of which the at least one transistor can be switched on for currents under and at most up to a predetermined, non-positive threshold value (i1<=ith<=0), and can otherwise be switched off. | 06-04-2009 |
| 20090212843 | SEMICONDUCTOR DEVICE ARRANGEMENT AND METHOD - A semiconductor device arrangement and a method. One embodiment includes at least one power transistor and at least one gate resistor located between a gate of the power transistor and a connecting point in the drive circuit of the power transistor. The semiconductor device arrangement includes a switchable element between the connecting point and a source of the power transistor. | 08-27-2009 |
| 20090302814 | SYSTEM AND METHOD FOR CONTROLLING A CONVERTER - A system and method for controlling a converter. One embodiment provides the cyclic actuation of a first switching element, used for applying an input voltage to an inductive storage element. A second switching element is used as a first rectifier element in a rectifier arrangement, in a step-up converter. An actuating circuit is provided for the first and second switching elements. | 12-10-2009 |
| 20090322293 | SWITCHING CONVERTER INCLUDING A RECTIFIER ELEMENT WITH NONLINEAR CAPACITANCE - A switching converter including a rectifier element with nonlinear capacitance. One embodiment provides a switching element configured to be driven in the on state and in the off state. A first capacitive element is between the load path terminals of the switching element and has a nonlinear capacitance characteristic curve dependent on a voltage between the load path connections. A rectifier element is coupled between the inductive storage element and the capacitive storage element such that it enables a current flow between the inductive storage element and the capacitive storage element when the switching element is driven in the off state. A second capacitive element is between the load path terminals of the rectifier element and has a nonlinear capacitance characteristic curve dependent on a voltage between the load path connections. | 12-31-2009 |
| 20100044788 | SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE AND PROCESS - A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas. | 02-25-2010 |
| 20100045361 | POWER CIRCUIT - A power circuit. One embodiment provides a circuit for driving a power transistor having a control electrode and a load path. The circuit includes a driver circuit configured to change the power transistor to a completely on or off state with the aid of a control signal supplied to the control electrode. A series circuit includes a semiconductor switching element and a capacitor. The series circuit is connected in parallel with the load path and the capacitor provides a supply voltage for the driver circuit. | 02-25-2010 |
| 20100046263 | RECTIFIER CIRCUIT WITH A VOLTAGE SENSOR - A rectifier circuit with a synchronously controlled semiconductor element comprising at least one field effect transistor with a control electrode and two switching electrodes. The control electrode operates the reverse state and the forward state between the switching electrodes. For this, the rectifier circuit comprises at least one driver which cooperates with a voltage sensor of the field effect transistor. During the diode operating state of the field effect transistor, the driver operates this to the forward state. The voltage sensor thereby forms at least one part of a non-linear voltage divider which comprises at least one monolithically integrated measuring capacitance. | 02-25-2010 |
| 20100079191 | CIRCUIT FOR ACTUATION OF A TRANSISTOR - A circuit for actuation of a transistor. One embodiment provides an actuation output for connection to the actuation connection of the transistor. A measurement arrangement is provided for ascertaining a load current flowing through the load path or a voltage across the load path and for providing a measurement signal. An actuation current source having an actuation current output is connected to the actuation output and supplied with the measurement signal and designed to produce an actuation current at the actuation current output. The actuation current is at a current level dependent on the measurement signal. | 04-01-2010 |
| 20100327942 | SEMICONDUCTOR DEVICE ARRANGEMENT AND METHOD - A semiconductor device arrangement and a method. One embodiment includes at least one power transistor and at least one gate resistor located between a gate of the power transistor and a connecting point in the drive circuit of the power transistor. The semiconductor device arrangement includes a switchable element between the connecting point and a source of the power transistor. | 12-30-2010 |
| 20110109283 | SYSTEM AND METHOD FOR CONTROLLING A CONVERTER - A system and method for controlling a converter. One embodiment provides the cyclic actuation of a first switching element, used for applying an input voltage to an inductive storage element. A second switching element is used as a first rectifier element in a rectifier arrangement, in a step-up converter. An actuating circuit is provided for the first and second switching elements. | 05-12-2011 |
| 20110121437 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A semiconductor device includes a drift zone of a first conductivity type formed within a semiconductor body, wherein one side of opposing sides of the drift zone adjoins a first zone within the semiconductor body and the other side adjoins a second zone within the semiconductor body. First semiconductor subzones of a second conductivity type different from the first conductivity type are formed within each of the first and second zones opposing each other along a lateral direction extending parallel to a surface of the semiconductor body. A second semiconductor subzone is formed within each of the first and second zones and between the first semiconductor subzones along the lateral direction. An average concentration of dopants within the second semiconductor subzone along 10% to 90% of an extension of the second semiconductor subzone along a vertical direction perpendicular to the surface is smaller than the average concentration of dopants along a corresponding section of extension within the drift zone. | 05-26-2011 |
