Patent application number | Description | Published |
20100246094 | METHODS FOR IMPROVING THE DIELECTRIC PROPERTIES OF A POLYMER, AND RELATED ARTICLES AND DEVICES - In one aspect of the present invention, a method for increasing the dielectric breakdown strength of a polymer is described. The method comprises providing the polymer and contacting a surface of the polymer in a reaction chamber with a gas plasma, under specified plasma conditions. The polymer is selected from the group consisting of a polymer having a glass transition temperature of at least about 150° C., and a polymer composite comprising at least one inorganic constituent. The contact with the gas plasma is carried out for a period of time sufficient to incorporate additional chemical functionality into a surface region of the polymer film, to provide a treated polymer. Also provided are an article and method of manufacture. | 09-30-2010 |
20110008525 | CONDENSATION AND CURING OF MATERIALS WITHIN A COATING SYSTEM - Present embodiments are directed to a system and method for condensing and curing organic materials within a deposition chamber. Present embodiments may include condensing an organic component from a gas phase into a liquid phase on a target surface within the deposition chamber, wherein the gas phase of the organic component might be mixed with an inert gas. Further, present embodiments may include solidifying the liquid phase of the organic component into a solid phase within the deposition chamber using an inert plasma formed from the inert gas. | 01-13-2011 |
20110086183 | BARRIER COATING WITH REDUCED PROCESS TIME - The present techniques provide systems and methods for protecting electronic devices such as organic light emitting devices (OLEDs) from adverse environmental effects using a thin film encapsulation with reduced process time. In some embodiments, the process time of forming a graded barrier over the OLED structure may take less than 5 minutes, and may result in substantially similar barrier properties as those of metal and epoxy sealants and/or typical thin film encapsulations. The process time of forming the barrier may be reduced by increasing deposition rates for organic and/or inorganic materials, reducing the thicknesses of organic and/or inorganic layers, and/or varying the number of zones in the barrier. | 04-14-2011 |
20110151200 | EDGE SEALING METHOD USING BARRIER COATINGS - The present techniques provide systems and methods for protecting electronic devices, such as organic light emitting devices (OLEDs) from adverse environmental effects. The edges of the devices may also be protected by a edge protection coating to reduce the adverse affects of a lateral ingress of adverse environmental conditions. In some embodiments, inorganic materials, or a combination of inorganic and organic materials, are deposited over the device to form a edge protection coating which extends approximately 3 millimeter or less beyond the edges of the device. In other embodiments, the device may be encapsulated with an organic region, and with an inorganic region, or the device may be encapsulated with inorganic materials, which may form the edge protection coating and may be combined with ultra high barrier technology. The coatings formed over the device may extend beyond the edges of the device to ensure lateral protection. | 06-23-2011 |
20110211795 | HERMETICALLY SEALED FIBER SENSING CABLE - In one aspect, the present invention provides a hermetically sealed fiber sensing cable comprising: a core fiber comprising at least one Bragg grating region, an outer surface and a length; a fiber cladding in contact with the core fiber along the entire length of the core fiber, the fiber cladding having an outer surface and a length; a carbon layer disposed upon the outer surface of the fiber cladding along the entire length of the fiber cladding, the carbon layer comprising diamond-like carbon; a hydrogen ion absorption layer in contact with the carbon layer, the hydrogen ion absorption layer being disposed on the outer surface of the carbon layer; and an outer sleeve. Also provided in another aspect of the present invention, is a component for a hermetically sealed fiber sensing cable. | 09-01-2011 |
20120164785 | METHOD OF MAKING A TRANSPARENT CONDUCTIVE OXIDE LAYER AND A PHOTOVOLTAIC DEVICE - In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10 | 06-28-2012 |
20120219791 | COATED POLYMER DIELECTRIC FILM - Present invention provides a film and an article including the film. The film includes first layer, second layer and third layer. The first layer includes a polymer dielectric material. The second layer is disposed on at least one surface of the first layer and includes inorganic oxide dielectric material. The third layer is disposed on the first or second layer and includes a nitride or oxynitride material. | 08-30-2012 |
20130109124 | METHODS OF MAKING A TRANSPARENT LAYER AND A PHOTOVOLTAIC DEVICE | 05-02-2013 |
20130133731 | CADMIUM DOPED TIN OXIDE BUFFER LAYER FOR THIN FILM PHOTOVOLTAIC DEVICES AND THEIR METHODS OF MANUFACTURE - Methods for forming a resistive transparent buffer layer on a substrate are provided. The method can include depositing a resistive transparent buffer layer on a transparent conductive oxide layer on a substrate. The resistive transparent buffer layer can comprise a cadmium doped tin oxide that has an as-deposited stoichiometry where cadmium is present in an atomic amount that is less than 33% of a total atomic amount of tin and cadmium. Zinc may also be provided in the resistive transparent buffer layer in certain embodiments. Additionally, thin film photovoltaic devices having such resistive transparent buffer layers are provided. | 05-30-2013 |
20130157405 | MANUFACTURING METHODS FOR SEMICONDUCTOR DEVICES - A method of manufacturing semiconductor assemblies is provided. The manufacturing method includes thermally processing a first semiconductor assembly comprising a first semiconductor layer disposed on a first support and thermally processing a second semiconductor assembly comprising a second semiconductor layer disposed on a second support. The first and second semiconductor assemblies are thermally processed simultaneously, and the first and second semiconductor assemblies are arranged such that the first semiconductor layer faces the second semiconductor layer during the thermal processing. | 06-20-2013 |