| Patent application number | Description | Published |
|---|
| 20080199649 | VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY - A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and <11-20> directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm | 08-21-2008 |
| 20080265379 | Laser Diode Orientation on Mis-Cut Substrates - A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate ( | 10-30-2008 |
| 20080303033 | FORMATION OF NITRIDE-BASED OPTOELECTRONIC AND ELECTRONIC DEVICE STRUCTURES ON LATTICE-MATCHED SUBSTRATES - A method of forming an AlInGaN alloy-based electronic or optoelectronic device structure on a nitride substrate and subsequent removal of the substrate. An AlInGaN alloy-based electronic or optoelectronic device structure formed on a nitride substrate is freed from the substrate on which it was grown. | 12-11-2008 |
| 20090034201 | OPTOELECTRONIC DEVICE WITH UPCONVERTING LUMINOPHORIC MEDIUM - A microelectronic device that in operation generates or includes component(s) that generate heat, in which the device comprises a heat conversion medium that converts such heat into a light emission having a shorter wavelength than such heat, to thereby cool the device and dissipate the unwanted heat by such light output. The heat conversion medium can include an upconverting luminophoric material, e.g., an anti-Stokes phosphor or phosphor composition. The provision of such heat conversion medium enables thermal management of microelectronic devices, e.g., optoelectronic devices, to be achieved in an efficient manner, to prolong the operational service life of devices such as LEDs, laser diodes, etc. that are degraded in performance by excessive heat generation in their operation. | 02-05-2009 |
| 20090152565 | PENDEO EPITAXIAL STRUCTURES AND DEVICES - A substrate comprising a trench lateral epitaxial overgrowth structure including a trench cavity, wherein the trench cavity includes a growth-blocking layer or patterned material supportive of a coalescent Pendeo layer thereon, on at least a portion of an inside surface of the trench. Such substrate is suitable for carrying out lateral epitaxial overgrowth to form a bridged lateral overgrowth formation overlying the trench cavity. The bridged lateral overgrowth formation provides a substrate surface on which epitaxial layers can be grown in the fabrication of microelectronic devices such as laser diodes, high electron mobility transistors, ultraviolet light emitting diodes, and other devices in which low dislocation density is critical. The epitaxial substrate structures of the invention can be formed without the necessity for deep trenches, such as are required in conventional Pendeo epitaxial overgrowth structures. | 06-18-2009 |
| 20090195137 | LIGHT EMISSION DEVICE AND METHOD UTILIZING MULTIPLE EMITTERS - A light emission device includes multiple electrically activated solid state emitters (e.g., LEDs) having differing spectral output from one another; and/or phosphor material including one or more phosphors arranged to receive spectral output from at least one of the solid state emitters and to responsively emit a phosphor output, to provide spectral output. In one arrangement, at least four electrically activated solid state emitters each have different spectral outputs in the visible range, with the emitters arranged in an array positioned on a single reflector cup or other support, with at least two solid state emitters differing substantially in size. Aggregated output may include white light having a color temperature in any of several desired ranges. | 08-06-2009 |
| 20100134024 | LED THERMAL MANAGEMENT SYSTEM AND METHOD - A thermal management system for reducing or eliminating heat-mediated degradation of LED performance and/or operating life. The system may include a thermal controller arranged to respond to an LED operating condition, and to responsively limit temperature in the LED. The thermal controller in one implementation includes a bypass circuit containing a bypass control element, such as a varistor, Zener diode, or antifuse device, and arranged to divert current from flowing to the LED so that the LED remains in a cool state, e.g., below 75° C. The system may be arranged to (I) at least partially attenuate the power supplied to an LED so as to reduce heat generation in such LED and maintain the LED below a threshold temperature and/or (II) remove heat from the LED to maintain temperature of the LED below a threshold temperature. | 06-03-2010 |
| 20100134176 | ELECTRONIC DEVICE INCLUDING CIRCUITRY COMPRISING OPEN FAILURE-SUSCEPTIBLE COMPONENTS, AND OPEN FAILURE-ACTUATED ANTI-FUSE PATHWAY - An electronic device including series-connected open failure-susceptible components and re-routing assemblies for directing current through an ancillary current path to maintain operability of the series array despite an open-failed component therein. The re-routing assembly can be constituted as an ancillary circuit containing a bypass control element arranged to maintain the ancillary circuit in a non-current flow condition when none of the open failure-susceptible components has experienced open failure, and to re-route current from a main circuit around an open-failed component therein and through the ancillary circuit and back to the main circuit, to bypass the open-failed component so that all non-failed series components of the main circuit remain operative when electrically energized. | 06-03-2010 |
| 20100148320 | VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY - A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and <11-20> directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm | 06-17-2010 |
| 20100289122 | III-V NITRIDE SUBSTRATE BOULE AND METHOD OF MAKING AND USING THE SAME - A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 10 | 11-18-2010 |
| 20100301351 | HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME - The present invention relates to various switching device structures including Schottky diode, P—N diode, and P—I—N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers of low dopant concentration (<1E16 cm | 12-02-2010 |
| 20110050125 | MULTI-CHIP LIGHT EMITTING DEVICE LAMPS FOR PROVIDING HIGH-CRI WARM WHITE LIGHT AND LIGHT FIXTURES INCLUDING THE SAME - A multi-chip lighting emitting device (LED) lamp for providing white light includes a submount including first and second die mounting regions thereon. A first LED chip is mounted on the first die mounting region, and a second LED chip is mounted on the second die mounting region. The LED lamp is configured to emit light having a spectral distribution including at least four different color peaks to provide the white light. For example, a first conversion material may at least partially cover the first LED chip, and may be configured to absorb at least some of the light of the first color and re-emit light of a third color. In addition, a second conversion material may at least partially cover the first and/or second LED chips, and may be configured to absorb at least some of the light of the first and/or second colors and re-emit light of a fourth color. Related light fixtures and methods are also disclosed. | 03-03-2011 |
| 20110089536 | ORIENTATION OF ELECTRONIC DEVICES ON MIS-CUT SUBSTRATES - A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate. In an illustrative implementation, a laser diode is oriented on a GaN substrate wherein the GaN substrate includes a GaN (0001) surface off-cut from the <0001> direction predominantly towards either the <11 | 04-21-2011 |
