| Patent application number | Description | Published |
|---|
| 20080201117 | DYNAMIC SAMPLING WITH EFFICIENT MODEL FOR OVERLAY - The present invention describes a method including: determining field-clustering scheme; selecting initial sample plan; establishing initial model of overlay, the initial model of overlay comprising components; and establishing efficient model of overlay from the initial model of overlay including: constructing matrices; identifying redundant components and eliminating the redundant components; and identifying highly-correlated components and determining whether to eliminate the highly-correlated components. | 08-21-2008 |
| 20080204694 | Controlling shape of a reticle with low friction film coating at backside - In an embodiment of the invention, an apparatus includes a reticle having a frontside including a pattern to be imaged onto a semiconductor wafer, a thin film located over a backside of the reticle to form a global convex shape and to reduce friction when sliding on a chuck, and the chuck having a topside to which the backside of the reticle conforms. | 08-28-2008 |
| 20090001525 | HIGH-K DUAL DIELECTRIC STACK - The present invention discloses a method including: providing a Group III-V component semiconductor material; forming a first layer over a surface of the Group III-V component semiconductor material, the first layer to unpin a Fermi level at the surface; forming a second layer over the first layer, the second layer for scaling an equivalent oxide thickness (EOT); and annealing the first layer before or after forming the second layer to remove bulk trap defects in the first layer. | 01-01-2009 |
| 20090004881 | HYBRID HIGH-K GATE DIELECTRIC FILM - The present invention discloses a method of forming a gate dielectric film including: providing a channel region in a transistor, the channel region including multiple segments having different sizes, some of which belong to a first surface portion while others belong to a second surface portion wherein the first surface portion and the second surface portion are adjacent; forming a hybrid high-k gate dielectric film over the channel region including: forming a first dielectric material over the first surface portion, the first dielectric material having a sub-monolayer thickness; forming a second dielectric material over the second surface portion, the second dielectric material having a sub-monolayer thickness, and forming a third dielectric film over the first dielectric film and the second dielectric film wherein the third dielectric film is high-k. | 01-01-2009 |
| 20090004882 | Method of forming high-k dual dielectric stack - The present invention discloses a method including: providing a Group III-V component semiconductor material; forming a first layer over a surface of the Group III-V component semiconductor material, the first layer to unpin a Fermi level at the surface; forming a second layer over the first layer, the second layer for scaling an equivalent oxide thickness (EOT); and annealing the first layer before or after forming the second layer to remove bulk trap defects in the first layer. | 01-01-2009 |
| 20100079955 | Microfins for cooling an ultramobile device - The present invention discloses a method of cooling an ultramobile device with microfins attached to an external wall of an enclosure surrounding the ultramobile device. | 04-01-2010 |
| 20100099238 | Laser-assisted chemical singulation of a wafer - The present invention discloses an apparatus including: a laser beam directed at a wafer held by a chuck mounted on a stage inside a process chamber; a focusing mechanism for the laser beam; a steering mechanism for the laser beam; an optical scanning mechanism for the laser beam; a mechanical scanning system for the stage; an etch chemical induced by the laser beam to etch the wafer and form volatile byproducts; a gas feed line to dispense the etch chemical towards the wafer; and a gas exhaust line to remove any excess of the etch chemical and the volatile byproducts. | 04-22-2010 |
| 20100129984 | WAFER SINGULATION IN HIGH VOLUME MANUFACTURING - The present invention discloses an apparatus including: a laser beam directed at a wafer held by a chuck in a process chamber; a focusing mechanism for the laser beam; a steering mechanism for the laser beam; an optical scanning mechanism for the laser beam; a mechanical scanning system for the chuck; an etch chemical induced by the laser beam to etch the wafer and form volatile byproducts; a gas feed line to dispense the etch chemical towards the wafer; and a gas exhaust line to remove any excess of the etch chemical and the volatile byproducts. | 05-27-2010 |
| 20100328428 | Optimized stereoscopic visualization - The present invention discloses a method comprising: calculating an X separation distance between a left eye and a right eye, said X separation distance corresponding to an interpupilary distance in a horizontal direction; and transforming geometry and texture only once for said left eye and said right eye. | 12-30-2010 |
