Patent application number | Description | Published |
20080211568 | MuGFET POWER SWITCH - A multi-gate field effect transistor power switch is used to selectively couple a circuit to a supply voltage. In various embodiments, both n and p-type multi-gate field effect transistor power switches may be used to couple sub-circuits of varying granularity to different voltage supplies. | 09-04-2008 |
20080239859 | ACCESS DEVICE - P-type multi gate field effect transistor access devices are adapted to be coupled to a memory cell to provide access to the memory cell. A method is described that uses a power switch to switch off address decoding circuitry allowing word lines to float toward a high supply voltage, turning off the p-type multi gate field effect transistor access devices. | 10-02-2008 |
20080265290 | DOUBLE MESH FINFET - A multiple gate field-effect transistor is built from an overlapping mesh assembly. The assembly comprises a first layer comprising a semiconductor material formed into at least one fin, a least one source, and at least one drain. The first layer comprises a portion of a first mesh, electrically separated from the rest of the mesh. Similarly, a second layer is formed over the first layer and electrically isolated from the first layer, the second layer being electrically conductive and comprising a gate for the at least one fin of the transistor. The second layer comprises a portion of a second mesh offset from the first mesh and overlapping the first mesh, the second layer of the MuGFET device electrically separated from the rest of the second mesh. | 10-30-2008 |
20080296681 | CONTACT STRUCTURE FOR FINFET DEVICE - In accordance with an embodiment, a FinFET device includes: one or more fins, a dummy fin, a gate line, a gate contact landing pad, and a gate contact element. Each of the fins extends in a first direction above a substrate. The dummy fin extends in parallel with the fins in the first direction above the substrate. The gate line extends in a second direction above the substrate, and partially wraps around the fins. The gate contact landing pad is positioned adjacent to or above the dummy fin and electrically coupled to the gate line. The gate contact element is electrically coupled to the gate contact landing pad and is positioned to the top surface thereof. | 12-04-2008 |
20090115468 | Integrated Circuit and Method for Operating an Integrated Circuit - An integrated circuit, comprising a first data retention element configured to retain the data, the first data retention element having a first setup time, and a second data retention element configured to retain the data, the second data retention element having a second setup time, the second data retention element further having a data input. The second data retention element is connected in parallel with the first data retention element, and the second data retention element is configurable via the data input such that the second setup time is longer than the first setup time. | 05-07-2009 |
20100194400 | Circuit Arrangement With A Test Circuit And A Reference Circuit And Corresponding Method - Implementations are presented herein that include a test circuit and a reference circuit. | 08-05-2010 |
20120062257 | Semiconductor Device With A Test Circuit And A Reference Circuit - Implementations are presented herein that include a test circuit and a reference circuit. | 03-15-2012 |
20130339819 | ERROR-TOLERANT MEMORIES - Methods and apparatuses relating to error-tolerant memories are provided. In one example embodiment, output signals from at least three memory devices are supplied to an error correction device. The error correction device outputs a corrected data value in such a manner that, when the read data values match, this data value is output and, in at least one state in which the data values do not match, a previously output data value is retained. | 12-19-2013 |