Patent application number | Description | Published |
20080258598 | Heat Exchange Enhancement - A heat exchange device that includes a structural section and a thin layer of material attached to a surface of the structural section. The thin layer of material has a thickness less than 100 microns. The combination of the structural section and the thin layer of material has a higher thermal transfer coefficient than the structural section alone, the thermal transfer coefficient representing an ability to exchange thermal energy with an ambient gas. | 10-23-2008 |
20080283403 | Heat exchange enhancement - A heat exchange device that includes a structural section and a thin layer of material attached to a surface of the structural section. The thin layer of material has a thickness less than 100 microns. The combination of the structural section and the thin layer of material has a higher thermal transfer coefficient than the structural section alone, the thermal transfer coefficient representing an ability to exchange thermal energy with an ambient gas. | 11-20-2008 |
20080285298 | Heat Exchange Enhancement - A heat exchange device that includes a structural section and a thin layer of material attached to a surface of the structural section. The thin layer of material has a thickness less than 100 microns. The combination of the structural section and the thin layer of material has a higher thermal transfer coefficient than the structural section alone, the thermal transfer coefficient representing an ability to exchange thermal energy with an ambient gas. | 11-20-2008 |
20080285329 | RECORDABLE ELECTRICAL MEMORY - A memory device includes a plurality of memory cells each including a recordable layer between two metal layers, the recordable layer including a first sub-cell and a second sub-cell. Each memory cell is constructed and designed to change from an as-deposited state to an initialized state upon application of an initialization signal, from the initialized state to a first inscribed state upon application of a first write signal, and from the initialized state to a second inscribed state upon application of a second write signal. The memory cell has a resistor-like current-voltage (I-V) characteristic when in the as-deposited state, a diode-like I-V characteristic when in the initialized state, and resistor-like I-V characteristics when in the first and second inscribed states for voltages within a predetermined range. | 11-20-2008 |
20080285337 | RECORDABLE ELECTRICAL MEMORY - A memory device includes memory cells each having a recordable layer between two metal layers, each memory cell being constructed and designed to change from a first state to a second state upon application of an initialization signal, and change from the second state to a third state upon application of a write signal. For a voltage within a specified range that is applied across the two metal layers, the memory cell has a lower resistance in the first state than in the second state, and has a higher resistance in the second state than in the third state. | 11-20-2008 |
20080286544 | Heat exchange enhancement - A heat exchange device that includes a structural section and a thin layer of material attached to a surface of the structural section. The thin layer of material has a thickness less than 100 microns. The combination of the structural section and the thin layer of material has a higher thermal transfer coefficient than the structural section alone, the thermal transfer coefficient representing an ability to exchange thermal energy with an ambient gas. | 11-20-2008 |
20080286955 | Fabrication of Recordable Electrical Memory - A memory cell of a memory device is fabricated by forming a first electrode on a substrate, positioning a photo mask at a first position relative to the substrate, and forming a first material layer on the first electrode based on a pattern on the photo mask. The photo mask is positioned at a second position relative to the substrate, and a second material layer is formed above the first material layer based on the pattern on the photo mask, the second material layer being offset from the first material layer so that a first sub-cell of the memory cell includes the first material layer and not the second material layer, and a second sub-cell of the memory cell includes both the first and second material layers. A second electrode is formed above the first and second material layers. | 11-20-2008 |
20090015125 | Heat Exchange Enhancement - A heat exchange structure includes elongated air ducts. Each air duct has a first opening and a second opening at two ends of the air duct to allow air to enter and exit the air duct, respectively. The heat exchange structure includes an exterior heat exchange surface and interior heat exchange surfaces, in which the exterior heat exchange surface is configured to receive thermal energy from heat generators that are mounted on the exterior heat exchange surface, and the exterior heat exchange surface dissipates a portion of the thermal energy received from the heat generators and transfers another portion of the thermal energy to the interior heat exchange surfaces. The interior heat exchange surfaces are in the elongated air ducts and configured to exchange thermal energy with air flowing in the air ducts, enhancing air flow in the air ducts by buoyancy of heated air. | 01-15-2009 |
20090084530 | Heat Exchange Enhancement - A heat exchange structure includes a plurality of elongated air ducts. The heat exchange structure has an exterior heat exchange surface and interior heat exchange surfaces, the interior surfaces being in the elongated air ducts. The heat exchange structure includes a plurality of heat generators that are distributed on the exterior heat exchange surface along an elongated direction of the air ducts, in which air flowing in the air duct is heated successively by heat from the heat generators, and air flow in the air duct is enhanced by buoyancy of heated air. | 04-02-2009 |