| Patent application number | Description | Published |
|---|
| 20100001209 | Halide-based scintillator nanomaterial - Scintillator material comprising nanoparticles (nanocrystals) comprising lead (Pb), iodine (I), and optionally one or both of oxygen (O) and hydrogen (H) wherein the nanoparticles exhibit room-temperature scintillation under gamma irradiation. The scintillator nanoparticles can comprise Pb | 01-07-2010 |
| 20100008390 | Light-emitting device having injection-lockable unidirectional semiconductor ring laser monolithically integrated with master laser - A unidirectional semiconductor ring laser (USRL) section is monolithically integrated with a DFB or DBR master laser section on a semiconductor substrate of a light-emitting device to provide an injection locking mode of operation that can result in low-cost ultrafast (over 100 GHz) functional chip that will be easy to use in practice. | 01-14-2010 |
| 20100034223 | Light-emitting device having injection-lockable semiconductor ring laser monolithically integrated with master laser - A semiconductor ring laser (SRL) section is monolithically integrated with a DFB or DBR master laser section on a semiconductor substrate of a light-emitting device to provide an injection locking mode of operation that can result in low-cost ultrafast (over 100 GHz) functional chip that will be easy to use in practice. | 02-11-2010 |
| 20100072374 | Lead-iodide-based scintillator materials - Scintillator material comprising nanoparticles (nanocrystals) comprising lead (Pb), iodine (I), and optionally one or both of oxygen (O) and hydrogen (H) wherein the nanoparticles exhibit room-temperature scintillation under gamma irradiation. The scintillator nanoparticles can comprise Pb | 03-25-2010 |
