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Genji
Genji Iwasaki, Ibaraki Pref. JP
| Patent application number | Description | Published |
|---|---|---|
| 20090054467 | Pyrrolo Pyrimidines as Agents for the Inhibition of Cystein Proteases - The invention provides compounds of Formula I or a pharmaceutically acceptable salt or ester thereof wherein the symbols have meaning as defined, which are inhibitors of cathepsin K and find use pharmaceutically for treatment of diseases and medical conditions in which cathepsin K is implicated, e.g. various disorders including inflammation, rheumatoid arthritis, osteoarthritis, osteoporosis and tumors. | 02-26-2009 |
Genji Iwasaki, Tsukuba-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080275127 | Arylsulfonamido-substituted hydroxamic acid derivatives - α-Amino hydroxamic acid derivative of the formula I, | 11-06-2008 |
Genji Iwasaki, Tsukuba JP
| Patent application number | Description | Published |
|---|---|---|
| 20090186889 | SPIRO-SUBSTITUTED PYRROLOPYRIMIDINES - The invention provides compounds of formula I or a pharmaceutically acceptable salt or ester thereof formula I | 07-23-2009 |
Genji Morimoto, Wakayama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110065363 | Scale Removing Method and Scale Removing Apparatus - A scale removing apparatus | 03-17-2011 |
Genji Nakamura, Nirasaki-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080274370 | Method for Forming Insulation Film - In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency. | 11-06-2008 |
| 20100096707 | Method for Forming Insulation Film - In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency. | 04-22-2010 |
| 20100105215 | METHOD OF MODIFYING INSULATING FILM - An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film. | 04-29-2010 |
Genji Nakamura, Ibaraki-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20080268655 | Method for Manufacturing Semiconductor Device - The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film. | 10-30-2008 |
Genji Nakamura, Yamanashi-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20080233764 | Formation of Gate Insulation Film - A method of forming a gate insulation film | 09-25-2008 |
Genji Sakata, Susono-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100151150 | PLASMA PROCESSING APPARATUS AND MANUFACTURING METHOD OF DEPOSITION-INHIBITORY MEMBER - A plasma processing apparatus of the present invention performs on a substrate to be processed, plasma processing with a noble metal material and a ferroelectric material and is provided with a constituent member that is exposed to plasma while being heated. The constituent member is formed with an aluminum alloy of at least 99% aluminum purity. | 06-17-2010 |