Geha
Makram Geha, Indianapolis, IN US
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20130325355 | Multivariate Genetic Evaluation Of Maize For Grain Yield And Moisture Content - A method for genetic evaluation of an inbred plant includes construction of a phenotypic trait database incorporating at least two numerically representable phenotypic traits in a first plant population. Methods for selecting an inbred plant or hybrid plant based on genetic values can be obtained using a multivariate mixed model analysis of such a relationship matrix comprising at least two numerically representable phenotypic traits. | 12-05-2013 |
Marie Geha, Fremont, CA US
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20150226955 | BANGLE WITH MAGNIFYING LENS AND ILLUMINATION DEVICE - A bangle is provided having a toroidal, tubular or cylindrical main body with at least inner and outer surfaces. A cut-out portion is provided in the main body extending from the outer surface towards the inner surface. A cavity extends at least partially through the main body and communicates with an opening formed in a wall of the cut-out portion. A magnifying lens is removably disposed in the cavity. An end of the magnifying lens is coupled to an illumination housing having an illumination device disposed therein. The illumination housing is configured to be placed in the cut-out section of the main body and substantially complete the shape of the main body. A protrusion is formed on an outer surface of the illumination housing for retracting the magnifying lens and the illumination housing from the cavity and cut-out portion, respectively. | 08-13-2015 |
Sam G. Geha, Cupertino, CA US
Patent application number | Description | Published |
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20140284696 | OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS - A method of fabricating a memory device is described. Generally, the method includes: forming a tunneling layer on a substrate; forming on the tunneling layer a multi-layer charge storing layer including at least a first charge storing layer comprising an oxygen-rich oxynitride overlying the tunneling layer, and a second charge storing layer overlying the first charge storing layer comprising a silicon-rich and nitrogen-rich oxynitride layer that is oxygen-lean relative to the first charge storing layer and comprises a majority of charge traps distributed in the multi-layer charge storing layer; and forming a blocking layer on the second oxynitride layer; and forming a gate layer on the blocking layer. Other embodiments are also described. | 09-25-2014 |