Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Gautsch
Josef Gautsch, Graz AT
| Patent application number | Description | Published |
|---|---|---|
| 20100162798 | Method for Determining the Viscosity of Fluids, and Viscosimeter - In a method for determining the viscosity of fluids, especially liquids, the fluid is brought into and moved through a tapering gap bounded by two opposite wall surfaces. Accordingly, a distance or the change of the distance between the opposite wall surfaces is measured by pressure exerted by the material moved through the preferably steadily tapering or narrowing gap onto the walls and is used or evaluated as a measurement value for the viscosity of the fluid. | 07-01-2010 |
Michael L. Gautsch, Jericho, VT US
| Patent application number | Description | Published |
|---|---|---|
| 20100117122 | Optimized Device Isolation - A structure for a semiconductor device includes an isolated MOSFET (e.g., NFET) having triple-well technology adjacent to an isolated PFET which itself is adjacent to an isolated NFET. The structure includes a substrate in which is formed a deep n-band region underneath any n-wells, p-wells and p-band regions within the substrate. One p-band region is formed above the deep n-band region and underneath the isolated p-well for the isolated MOSFET, while another p-band region is formed above the deep n-band region and underneath all of the p-wells and n-wells, including those that are part of the isolated PFET and NFET devices within the substrate. The n-wells for the isolated MOSFET are connected to the deep n-band region. The resulting structure provides for improved device isolation and reduction of noise propagating from the substrate to the FETs while maintaining the standard CMOS spacing layout spacing rules and electrical biasing characteristics both external and internal to the triple-well isolation regions. | 05-13-2010 |
Michael Lawrence Gautsch, Jericho, VT US
| Patent application number | Description | Published |
|---|---|---|
| 20100164075 | TRENCH FORMING METHOD AND STRUCTURE - An electrical structure and method of forming. The method includes providing a semiconductor structure comprising a semiconductor substrate, a buried oxide layer (BOX) formed over the semiconductor substrate, and a silicon on insulator layer (SOI) formed over and in contact with the BOX layer. The SOI layer comprises shallow trench isolation (STI) structures formed between electrical devices. A first photoresist layer is formed over the STI structures and the electrical devices. Portions of said first photoresist layer, portions of the STI structures, and portions of the BOX layer are removed resulting in formed trenches. Ion implants are formed within portions of the semiconductor substrate. Remaining portions of the first photoresist layer are removed. A dielectric layer is formed over the electrical devices and within the trenches. A second photoresist layer is formed over the dielectric layer. Portions of the second photoresist layer are removed. | 07-01-2010 |
Robert Gautsch, Belton, SC US
| Patent application number | Description | Published |
|---|---|---|
| 20100077898 | ADJUSTABLE POMMEL HANDLE FOR POWER TOOL - An adjustable handle for a power tool is disclosed. The adjustable handle may be rotated about the longitudinal axis of the handle to a position desired by the user and locked into the desired position by a locking member. The adjustable handle may be positioned into one of a plurality of predetermined handle positions. | 04-01-2010 |