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| 20090281990 | System and Method for Dissemination of Relevant Knowledge - A method comprises extracting one or more document identifiers from a document currently displayed on the user's computer screen. The method further comprises searching an enterprise network, using the one or more document identifiers, for one or more related documents that are related to the document currently displayed on the user's computer screen. The one or more related documents may then be filtered, and the user may be notified of the one or more filtered related documents. | 11-12-2009 |
| 20100125664 | System, Method, and Software for Integrating Cloud Computing Systems - A method for integrating cloud computing systems includes establishing a connection between a cloud computing system architecture and cloud computing systems. Each of the cloud computing systems includes computing resources. The method further includes integrating the computing resources with an external integration architecture by establishing a second connection between the cloud computing system architecture and the external integration architecture. The external integration architecture includes IT Information Library (ITIL) software components. The cloud computing system architecture includes management components that provide integration points to connect the ITIL software components with the computing resources. | 05-20-2010 |
| 20110307408 | System and Method for Assigning a Business Value Rating to Documents in an Enterprise - A system and method for managing information in an enterprise is disclosed. In one embodiment, the method comprises receiving a document from a component of an enterprise network, determining one or more characteristics associated with the document, assigning a priority score to a user associated with the document, assigning a business value rating to the document, and performing an operation with the document based on the business value rating. In another embodiment, the system includes a processor operable to receive a document, determine one or more characteristics associated with the document, determine a priority score to a user associated with the document, assign a business value rating to the document, and perform an operation with the document based on the business value rating. | 12-15-2011 |
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| 20110127128 | FREQUENCY TUNABLE MAGNETIC DAMPING APPARATUS - A damping apparatus is disclosed comprising at least one pair of magnets and a conducting member. The at least one pair of magnets define a gap therebetween. The conducting member is coupled to a payload and positioned within the gap. The conducting member is configured to vibrate in response to a vibration of the payload. The conducting member comprises a conducting material. Vibration of the conducting member generates eddy currents in the conducting member, and the eddy currents generate a frequency-dependent damping force. The frequency-dependent damping force is adjustable based on the conducting material and a thickness of the conducting member. The conducting material and the thickness are selected to adjust the frequency-dependent damping force. | 06-02-2011 |
| 20110147146 | ENHANCED DAMPING USING CRYOGENIC COOLING - A damping apparatus is disclosed having at least one magnet, a conducting member movable relative to the magnet, a cryogenic fluid, and a channel that confines the cryogenic fluid in contact with the conducting member. The cryogenic fluid may maintain the conducting member at cryogenic temperatures, thereby increasing a damping force provided by the conducting member to a payload. | 06-23-2011 |
| 20110148236 | TEMPERATURE COMPENSATION TUNABLE MAGNETIC DAMPING - A damping apparatus is disclosed including at least one pair of magnets, a conducting member, a magnetic shunt, and a temperature sensing mechanism. The pair of magnets defines a gap therebetween. The magnets generate a magnetic flux circuit having a magnetic flux path within the gap and a magnetic flux return path outside the gap. The conducting member is positioned at least partially within the gap. The magnetic shunt is positioned at least partially within the magnetic flux return path of the magnets. The temperature sensing mechanism is coupled to the magnetic shunt. The temperature sensing mechanism is configured to control a position of the magnetic shunt based on a sensed temperature. | 06-23-2011 |
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| 20080285304 | LIGHT EXTRACTION FILM SYSTEM - A backlight comprises in order a lightguide plate with a sidelit light source and bonded thereto a light extraction unit containing in order from the lightguide plate, a first polymeric layer, an adhesive layer, a second polymeric layer bearing features at least partly embedded in the adhesive layer wherein the materials of the first polymeric layer, the adhesive layer, and the second polymeric layer differ by less than 0.05 in refractive index, the interstitial regions between the non-embedded portions of the features containing a material having a refractive index at least 0.1 lower than that of the material comprising the features. | 11-20-2008 |
| 20080285310 | ELONGATED ILLUMINATORS CONFIGURATION FOR LCD DISPLAYS - A solid waveguide comprises opposite TIR surfaces further comprising: | 11-20-2008 |
| 20090050855 | POLYMERIC CONDUCTOR DONOR AND TRANSFER METHOD - The present invention relates to a donor laminate for transfer of a conductive layer comprising at least one electronically conductive polymer on to a receiver, wherein the receiver is a component of a device. The present invention also relates to methods pertinent to such transfers. | 02-26-2009 |
| 20110026273 | Optical coupling device for light guiding film - A uniform light source having a substrate for providing structural and functional support to the assembly. A bottom reflector provided on the substrate. A plurality of solid state light sources provided in an opening of the bottom reflector for providing a point light source. A plurality of light films and having light redirecting areas provided between the plurality of solid state light sources for redirecting and spreading the point light source to a uniform plane of light; a joining clip comprising a top capping portion and a bottom support portion, the bottom support portion being aligned perpendicular to the top capping portion and having a height sufficient to house the plurality of light films. A top diffuser for diffusing the uniform plane of light. The plurality of light films has a thickness between 0.1 mm to 1.0 mm. | 02-03-2011 |
| 20110026274 | Backlight illumination assembly having a joining clip with diffusion means - A uniform light source having a substrate for providing structural and functional support to the assembly. A bottom reflector provided on the substrate. A plurality of solid state light sources provided in an opening of the bottom reflector for providing a point light source. A plurality of light films and having light redirecting areas provided between the plurality of solid state light sources for redirecting and spreading the point light source to a uniform plane of light; a joining clip comprising a top capping portion and a bottom support portion, the bottom support portion being aligned perpendicular to the top capping portion and having a height sufficient to house the plurality of light films. A top diffuser for diffusing the uniform plane of light. The plurality of light films has a thickness between 0.1 mm to 1.0 mm. In addition, the joining clip further comprises a light diffusion means. | 02-03-2011 |
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| 20080286494 | ULTRALOW DIELECTRIC CONSTANT LAYER WITH CONTROLLED BIAXIAL STRESS - A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa. | 11-20-2008 |
| 20080311744 | MULTILAYER HARDMASK SCHEME FOR DAMAGE-FREE DUAL DAMASCENE PROCESSING OF SiCOH DIELECTRICS - Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa. | 12-18-2008 |
| 20090146265 | ULTRA LOW k PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESSES USING A SINGLE BIFUNCTIONAL PRECURSOR CONTAINING BOTH A SiCOH MATRIX FUNCTIONALITY AND ORGANIC POROGEN FUNCTIONALITY - A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH | 06-11-2009 |
| 20090297823 | ULTRA LOW K (ULK) SiCOH FILM AND METHOD - The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater. The multiphase, ultra low k film is prepared by plasma enhanced chemical vapor deposition in which one of the following alternatives is utilized: at least one precursor gas comprising siloxane molecules containing at least three Si—O bonds; or at least one precursor gas comprising molecules containing reactive groups that are sensitive to e-beam radiation. Electronic structures including the multiphase, ultra low k film are also disclosed. | 12-03-2009 |
| 20090304951 | ULTRALOW DIELECTRIC CONSTANT LAYER WITH CONTROLLED BIAXIAL STRESS - A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than | 12-10-2009 |
