Patent application number | Description | Published |
20140367787 | METHODS OF FORMING TRANSISTORS WITH RETROGRADE WELLS IN CMOS APPLICATIONS AND THE RESULTING DEVICE STRUCTURES - A method includes forming a layer of silicon-carbon on an N-active region, performing a common deposition process to form a layer of a first semiconductor material on the layer of silicon-carbon and on the P-active region, masking the N-active region, forming a layer of a second semiconductor material on the first semiconductor material in the P-active region and forming N-type and P-type transistors. A device includes a layer of silicon-carbon positioned on an N-active region, a first layer of a first semiconductor positioned on the layer of silicon-carbon, a second layer of the first semiconductor material positioned on a P-active region, a layer of a second semiconductor material positioned on the second layer of the first semiconductor material, and N-type and P-type transistors. | 12-18-2014 |
20150035016 | NITRIDE SPACER FOR PROTECTING A FIN-SHAPED FIELD EFFECT TRANSISTOR (FINFET) DEVICE - Approaches for protecting a semiconductor device (e.g., a fin field effect transistor device (FinFET)) using a nitride spacer are provided. Specifically, a nitride spacer is formed over an oxide and a set of fins of the FinFET device to mitigate damage during subsequent processing. The nitride spacer is deposited before the block layers to protect the oxide on top of a set of gates in an open area of the FinFET device uncovered by a photoresist. The oxide on top of each gate will be preserved throughout all of the block layers to provide hardmask protection during subsequent source/drain epitaxial layering. Furthermore, the fins that are open and uncovered by the photoresist or the set of gates remain protected by the nitride spacer. Accordingly, fin erosion caused by amorphization of the fins exposed to resist strip processes is prevented, resulting in improved device yield. | 02-05-2015 |
20150076654 | ENLARGED FIN TIP PROFILE FOR FINS OF A FIELD EFFECT TRANSISTOR (FINFET) DEVICE - Approaches for providing enlarged fin tips for a set of fins of a fin field effect transistor device (FinFET) are disclosed. Specifically, approaches are provided for patterning a hardmask formed over a substrate; forming a set of fin tips from the substrate using a first etch; and forming a set of fins from the substrate using a second etch, wherein each of the set of fin tips has a width greater than a most narrow section of each of the set of fins. Each of the fin tips has a tapered profile that enlarges towards a top end thereof to compensate for erosion losses during processing. | 03-19-2015 |
20150097197 | FINFET WITH SIGMA CAVITY WITH MULTIPLE EPITAXIAL MATERIAL REGIONS - Embodiments of the present invention provide an improved finFET and methods of fabrication. A sigma cavity is used with an n-type finFET to allow multiple epitaxial layers to be disposed adjacent to a finFET gate. In some embodiments, stacking faults may be formed in the epitaxial layers using a stress memorization technique. | 04-09-2015 |
20150115371 | FINFET SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATING SAME - The invention provides a method of forming a semiconductor structure, which include: providing an intermediate semiconductor structure having semiconductor substrate, a fin having an EG oxide layer in contact with at least a portion of the fin, and a gate stack disposed over a portion of the fin; forming a silicon nitride layer over portions of the fin that are not located under the gate stack; and after forming the silicon nitride layer, performing one or more ion implantation steps on the intermediate semiconductor structure. The invention also provides a method of forming a semiconductor structure including: providing an intermediate semiconductor structure having a semiconductor substrate, a fin having an EG oxide layer in contact with at least a portion of the fin, and a gate material disposed over the fin; forming, over the fin and gate material of the intermediate semiconductor structure, a gate stack hardmask including an oxide layer; forming a silicon nitride barrier layer on the oxide layer of the gate stack hardmask; performing one or more gate stack hardmask patterning steps; removing the EG oxide layer from portions of the fin that are not located under the gate; and subsequent to removing the EG oxide layer from portions of the fin that are not located under the gate, performing one or more ion implantation steps. | 04-30-2015 |
20150214345 | DOPANT DIFFUSION BARRIER TO FORM ISOLATED SOURCE/DRAINS IN A SEMICONDUCTOR DEVICE - Approaches for isolating source and drain regions in an integrated circuit (IC) device (e.g., a metal-oxide-semiconductor field-effect transistor (MOSFET)) are provided. Specifically, the device comprises a gate structure formed over a substrate, a source and drain (S/D) embedded within the substrate adjacent the gate structure, and a liner layer (e.g., silicon-carbon) between the S/D and the substrate. In one approach, the liner layer is formed atop the S/D as well. As such, the liner layer formed in the junction prevents dopant diffusion from the source/drain. | 07-30-2015 |
Patent application number | Description | Published |
20140070358 | METHOD OF TAILORING SILICON TRENCH PROFILE FOR SUPER STEEP RETROGRADE WELL FIELD EFFECT TRANSISTOR - A methodology is disclosed enabling the formation of silicon trench profiles for devices, such as SSRW FETs, having a resultant profile that enables desirable epitaxial growth of semiconductor materials. Embodiments include forming a trench in a silicon wafer between STI regions, thermally treating the silicon surfaces of the trench, and forming Si:C in the trench. The process eliminates a need for an isotropic silicon etch to achieve a desirable flat surface. Further, the flat bottom surface provides a desirable surface for epitaxial growth of semiconductor materials, such as Si:C. | 03-13-2014 |
20140183551 | BLANKET EPI SUPER STEEP RETROGRADE WELL FORMATION WITHOUT Si RECESS - A method of forming SSRW FETs with controlled step height between a field oxide and epitaxially grown silicon and the resulting devices are provided. Embodiments include providing a SiN layer on a substrate, forming first, second, and third spaced STI regions of field oxide through the SiN layer and into the substrate, removing a top portion of the field oxide for each STI region by a controlled deglaze, removing the SiN layer, forming an n-type region in the substrate between the first and second STI regions and a p-type region in the substrate between the second and third STI regions, and epitaxially growing a Si based layer on the substrate over the n-type and p-type regions. | 07-03-2014 |
20140197411 | METHOD OF FORMING STEP DOPING CHANNEL PROFILE FOR SUPER STEEP RETROGRADE WELL FIELD EFFECT TRANSISTOR AND RESULTING DEVICE - A methodology enabling the formation of steep channel profiles for devices, such as SSRW FETs, having a resultant channel profiles that enables suppression of threshold voltage variation and the resulting device are disclosed. Embodiments include providing STI regions in a silicon wafer; performing a deep well implantation of a dopant into the silicon wafer between STI regions; forming a recess in the doped silicon wafer between the STI regions; performing a shallow well implantation of the dopant into the silicon wafer in the recess; and forming Si:C on the doped silicon wafer in the recess. | 07-17-2014 |
20150053981 | METHOD OF FORMING STEP DOPING CHANNEL PROFILE FOR SUPER STEEP RETROGRADE WELL FIELD EFFECT TRANSISTOR AND RESULTING DEVICE - A methodology enabling the formation of steep channel profiles for devices, such as SSRW FETs, having a resultant channel profiles that enables suppression of threshold voltage variation and the resulting device are disclosed. Embodiments include providing STI regions in a silicon wafer; performing a deep well implantation of a dopant into the silicon wafer between STI regions; forming a recess in the doped silicon wafer between the STI regions; performing a shallow well implantation of the dopant into the silicon wafer in the recess; and forming Si:C on the doped silicon wafer in the recess. | 02-26-2015 |
Patent application number | Description | Published |
20080262530 | DEVICE AND METHOD FOR TREATMENT OF GASTROESOPHAGEAL REFLUX DISEASE - A lower esophageal sphincter tightening device for treating gastroesophageal reflux disease which includes an insertion device, an energy source, and an energy transmitting device. The insertion device, by insertion through a body opening, positions the energy transmitting device in the proximity of the lower esophageal sphincter. The energy source generates and transmits energy via the insertion device to the energy transmitting device which directs the transmitted energy onto the lower esophageal sphincter which is comprised largely of collagen. The energy source transmits energy at a level sufficient to cause heating of the sphincter's collagen resulting in a shrinkage of the collagen and a tightening of the sphincter. | 10-23-2008 |
20100286753 | Device and Method for Treatment of Gastroesophageal Reflux Disease - A lower esophageal sphincter tightening device for treating gastroesophageal reflux disease which includes an insertion device, an energy source, and an energy transmitting device. The insertion device, by insertion through a body opening, positions the energy transmitting device in the proximity of the lower esophageal sphincter. The energy source generates and transmits energy via the insertion device to the energy transmitting device which directs the transmitted energy onto the lower esophageal sphincter which is comprised largely of collagen. The energy source transmits energy at a level sufficient to cause heating of the sphincter's collagen resulting in a shrinkage of the collagen and a tightening of the sphincter. | 11-11-2010 |
20120330298 | SYSTEM AND METHOD OF TREATING ABNORMAL TISSUE IN THE HUMAN ESOPHAGUS - An ablation catheter system and method of use is provided to endoscopically access portions of the human esophagus experiencing undesired growth of columnar epithelium. The ablation catheter system and method includes controlled depth of ablation features and use of either radio frequency spectrum, non-ionizing ultraviolet radiation, warm fluid or microwave radiation, which may also be accompanied by improved sensitizer agents. | 12-27-2012 |
20130046146 | Device and Method for Treatment of Gastroesophageal Reflux Disease - A lower esophageal sphincter tightening device for treating gastroesophageal reflux disease which includes an insertion device, an energy source, and an energy transmitting device. The insertion device, by insertion through a body opening, positions the energy transmitting device in the proximity of the lower esophageal sphincter. The energy source generates and transmits energy via the insertion device to the energy transmitting device which directs the transmitted energy onto the lower esophageal sphincter which is comprised largely of collagen. The energy source transmits energy at a level sufficient to cause heating of the sphincter's collagen resulting in a shrinkage of the collagen and a tightening of the sphincter. | 02-21-2013 |
20130310642 | Device and Method for Treatment of Gastroesophageal Reflux Disease - A lower esophageal sphincter tightening device for treating gastro esophageal reflux disease which includes an insertion device, an energy source, and an energy transmitting device. The insertion device, by insertion through a body opening, positions the energy transmitting device in the proximity of the lower esophageal sphincter. The energy generates and transmits energy via the insertion device to the energy transmitting device which directs the transmitted energy onto the lower esophageal sphincter which is comprised largely of collagen. The energy source transmits energy at a level sufficient to cause heating of the sphincter's collagen resulting in a shrinkage of the collagen and a tightening of the sphincter. | 11-21-2013 |
20140058373 | SYSTEM AND METHOD OF TREATING ABNORMAL TISSUE IN THE HUMAN ESOPHAGUS - An ablation catheter system and method of use is provided to endoscopically access portions of the human esophagus experiencing undesired growth of columnar epithelium. The ablation catheter system and method includes controlled depth of ablation features and use of either radio frequency spectrum, non-ionizing ultraviolet radiation, warm fluid or microwave radiation, which may also be accompanied by improved sensitizer agents. | 02-27-2014 |
Patent application number | Description | Published |
20080275445 | METHOD AND APPARATUS FOR GASTROINTESTINAL TRACT ABLATION FOR TREATMENT OF OBESITY - Devices and methods for ablating tissue in the wall of various organs of the gastrointestinal tract of a patient in order to cure or ameliorate metabolic pathophysiological conditions such as obesity, insulin resistance, or type 2 diabetes mellitus are provided. Ablational treatment of target areas may be fractional or partial, rendering a post-treatment portion of target tissue ablated and another portion that is substantially intact. Fractional ablation is achieved by controlling the delivery of ablational energy across the surface area being treated, and controlling the depth of energy penetration into tissue. Surface area control of energy delivery may controlled by the spatial pattern of distributed ablation elements or by the selective activation of a subset of a dense pattern of ablation elements. Embodiments of the device include an ablational electrode array that spans 360 degrees and an array that spans an arc of less than 360 degrees. | 11-06-2008 |
20090048593 | SYSTEM AND METHOD OF TREATING ABNORMAL TISSUE IN THE HUMAN ESOPHAGUS - An ablation catheter system and method of use is provided to endoscopically access portions of the human esophagus experiencing undesired growth of columnar epithelium. The ablation catheter system and method includes controlled depth of ablation features and use of either radio frequency spectrum, non-ionizing ultraviolet radiation, warm fluid or microwave radiation, which may also be accompanied by improved sensitizer agents. | 02-19-2009 |
20140088581 | METHOD AND APPARATUS FOR GASTROINTESTINAL TRACT ABLATION FOR TREATMENT OF OBESITY - Devices and methods for ablating tissue in the wall of various organs of the gastrointestinal tract of a patient in order to cure or ameliorate metabolic pathophysiological conditions such as obesity, insulin resistance, or type 2 diabetes mellitus are provided. Ablational treatment of target areas may be fractional or partial, rendering a post-treatment portion of target tissue ablated and another portion that is substantially intact. Fractional ablation is achieved by controlling the delivery of ablational energy across the surface area being treated, and controlling the depth of energy penetration into tissue. Surface area control of energy delivery may controlled by the spatial pattern of distributed ablation elements or by the selective activation of a subset of a dense pattern of ablation elements. Embodiments of the device include an ablational electrode array that spans 360 degrees and an array that spans an arc of less than 360 degrees. | 03-27-2014 |
Patent application number | Description | Published |
20090025123 | Digital Printed Applique Emblem - A process for applying digitally printed applique” indicia which results in decorative and identification elements for decoration and identification when applied to uniforms, fashion, “basic” and performance apparel, swimwear and intimate apparel as well as other textile products, the elements being an alternative to direct embroidery, embroidered emblems, thermo-transfer films, silk screen or sublimated printing. The production process includes the following phases ( | 01-29-2009 |
20090286039 | PRINTED APPLIQUE WITH THREE-DIMENSIONAL EMBROIDERED APPEARANCE - An appliqué emblem having a three dimensional embroidered appearance for decoration and identification when applied to uniforms, fashion, “basic” and performance apparel, swimwear, and intimate apparel, as well as other textile products. The appliqué emblem being an alternative to direct embroidery, embroidered emblems, thermo-transfer films, silk screen or sublimated printing. | 11-19-2009 |
20110014837 | METHOD OF PRODUCING TEXTILE EMBLEMS WITH PRESSURE SENSITIVE ADHESIVE PROPERTIES - A new device, pressure sensitive adhesive system for bonding textiles and a method for producing integrated textile emblems such as patches, emblems, emblems, labels and cut textile parts including wovens, knits and nonwoven structures made of both natural and or synthetic fibers incorporating a pressure sensitive adhesive. The resulting room temperature pressure sensitive-patch eliminates tedious and cost intensive sewing operations (embroidery) and or heat-sealing operations (heat transfers) to other textile products such as apparel and or accessories, headwear, crafts home furnishings and luggage. The room temperature pressure sensitive adhesive-patches comprise at least: 1) a top base layer which can be a knitted, woven or non-woven fabric sheet that is stitched, printed, embossed, etched, engraved, flocked or dyed to form a decorative element, and which may be cut into a desired shape; 2) a pressure-sensitive adhesive layer adhered to the top base layer that comprises an adhesive having good medium-to-high surface energy properties, is not water soluble and is of adequate thickness to provide a sustainable bond capable of surviving multiple washes to textile-based products such as apparel and or accessories, headwear, crafts home furnishings and luggage. The room temperature pressure sensitive-patches may be transferred by simple pressure, thereby eliminating the burden and expense of thermal or mechanical (stitched) bonding. | 01-20-2011 |
20110168319 | PRESSURE SENSITIVE TEXTILE ADHESIVE - A method of wash-durably bonding integrated textile emblems such as patches, emblems, labels and cut textile parts to another textile article by laminating a pressure sensitive acrylic polymer adhesive to the back surface of the textile emblem. The acrylic polymer adhesive has a storage modulus that is greater than a loss modulus throughout a frequency range of from 0.1885 Hz to 628 Hz where bonding and debonding are expected to occur, and is devoid of any cross linking additives or reagents. The integrated textile emblem with laminated pressure sensitive acrylic polymer adhesive has improved adhesion to low-to-high energy surfaces, is not water soluble and is of adequate thickness to provide a wash-durable textile-to-textile bond capable of seaming or permanently attaching items such as textile panels, appliqué bearing text, numbers, logos and other indicia for the apparel, accessory and other industries. | 07-14-2011 |