| Patent application number | Description | Published |
|---|
| 20080282921 | ELECTRONIC DEVICES AND PROCESSES FOR FORMING THE SAME - An electronic device includes an array. In one embodiment, a process for forming an electronic device includes the array, which includes electronic components, can include printing one or more layers as a series of segments onto a workpiece. In one embodiment, a process includes printing a layer onto the workpiece and at least one exposed portion of the chuck. In still another embodiment, a printing head is greater than 0.5 mm from the workpiece. In a further embodiment, “hybrid” printing can be used to help form a thicker layer having a relatively thinner width. In a further embodiment, processes can be used to reduce the likelihood of a stitching defect, nonuniformity of a layer across an array, or a combination thereof. A printing apparatus can be modified to achieve more flexibility in liquid compositions, temperatures or other conditions used in printing a layer. | 11-20-2008 |
| 20090015141 | Electronic Device Having An Optical Resonator - An optical resonator is provided, and methods for making the same, as well as devices and sub-assemblies including the same. For example, such an electronic device (FIG. | 01-15-2009 |
| 20090059404 | ELECTRONIC DEVICE HAVING A MIRROR STACK - In one embodiment, an electronic device is provided and methods for making the same, as well as devices and sub-assemblies including the same. For example, such an electronic device (FIG. | 03-05-2009 |
| 20090081914 | ORGANIC ELECTRONIC DEVICE AND PROCESS FORMING THE SAME - An organic electronic device includes a first electrode layer, an organic resistive layer coupled to the first electrode layer wherein the organic resistive layer defines at least three regions, an organic active layer coupled to the organic resistive layer, and a second electrode layer coupled to the organic active layer. Each of the at least three regions is characterized by one of the plurality of resistances and the plurality of resistances includes at least three discrete resistances that are different from one another. The regions can be fabricated by selectively exposing portions of the organic resistive layer to a chemical, selectively removing portions of the organic resistive layer, or depositing a plurality of blends. | 03-26-2009 |
| 20090278277 | MULTILAYER FILMS FOR PACKAGE APPLICATIONS AND METHOD FOR MAKING SAME - A multilayer film formed by a solution process. The multilayer film includes a plurality of basic film structures positioned in contiguous overlying relationship to form a common multilayer film. Each of the plurality of basic film structures includes one of: a first two-layer structure with a first layer including either a polymer material or an organic material and a second layer including a functionalized inorganic material; a second two-layer structure with a first layer including either a polymer material or an organic material and a second layer including either a polymer binder and/or an organic binder; and a three layer structure with a first layer including either a polymer material or an organic material, a second layer including a functionalized inorganic material, and a third layer including one of a polymer binder and/or an organic binder. | 11-12-2009 |
| 20100012932 | METAL OXIDE TFT WITH IMPROVED CARRIER MOBILITY - A fabrication method is used in conjunction with a semiconductor device having a metal oxide active layer less than 100 nm thick and the upper major surface and the lower major surface have material in abutting engagement to form underlying interfaces and overlying interfaces. The method of fabrication includes controlling interfacial interactions in the underlying interfaces and the overlying interfaces to adjust the carrier density in the adjacent metal oxide by selecting a metal oxide for the metal oxide active layer and by selecting a specific material for the material in abutting engagement. The method also includes one or both steps of controlling interactions in underlying interfaces by surface treatment of an underlying material forming a component of the underlying interface and controlling interactions in overlying interfaces by surface treatment of the metal oxide film performed prior to deposition of material on the metal oxide layer. | 01-21-2010 |
| 20100019656 | ACTIVE MATRIX ORGANIC LIGHT EMITTING DISPLAY - A full-color active matrix organic light emitting display including a transparent substrate, a color filter positioned on an upper surface of the substrate, a spacer layer formed on the upper surface of the color filter, a metal oxide thin film transistor backpanel formed on the spacer layer and defining an array of pixels, and an array of single color, organic light emitting devices formed on the backpanel and positioned to emit light downwardly through the backpanel, the spacer layer, the color filter, and the substrate in a full-color display. | 01-28-2010 |
| 20100059742 | STABLE AMORPHOUS METAL OXIDE SEMICONDUCTOR - A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer. | 03-11-2010 |
| 20100233383 | Organic electronic devices and methods - Disclosed are methods of fabricating an organic electronic device, which includes dip coating layers, and the devices made therefrom. | 09-16-2010 |
| 20100267197 | DOUBLE SELF-ALIGNED METAL OXIDE TFT - A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area. | 10-21-2010 |
| 20100291721 | PROCESSES FOR FORMING ELECTRONIC DEVICES INCLUDING SPACED-APART RADIATION REGIONS - Processes for forming an electronic device include forming a first radiation region, a second radiation region spaced apart from the first radiation region, and an insulating region. The insulating region can have a first side and a second side opposite the first side. The first radiation region can lie immediately adjacent to the first side, and the second radiation region can lie immediately adjacent to the second side. Within the insulating region, no other radiation region may lie between the first and second radiation regions, and the insulating region can include an insulating layer that includes a plurality of openings. A process for forming the electronic device can include patterning an insulating layer. | 11-18-2010 |
| 20110037054 | AMOLED WITH CASCADED OLED STRUCTURES - An active matrix organic light emitting display includes a plurality of pixels with each pixel including at least one organic light emitting diode circuit. Each diode circuit producing a predetermined amount of light lm in response to power W applied to the circuit and including n organic light emitting diodes cascaded in series so as to increase voltage dropped across the cascaded diodes by the factor of n, where n is an integer greater than one. Each diode of the n organic light emitting diodes produces approximately 1/n of the predetermined amount of light lm so as to reduce current flowing in the diodes by 1/n. The organic light emitting diode circuit of each pixel includes a thin film transistor current driver with the cascaded diodes connected in the source/drain circuit so the current driver provides the current flowing in the diodes. | 02-17-2011 |
| 20110104841 | MASK LEVEL REDUCTION FOR MOFET - A method of fabricating a thin film transistor for an active matrix display using reduced masking operations includes patterning a gate on a substrate. A gate dielectric is formed over the gate and a semiconducting metal oxide is deposited on the gate dielectric. A channel protection layer is patterned on the semiconducting metal oxide overlying the gate to define a channel area and to expose the remaining semiconducting metal oxide. A source/drain metal layer is deposited on the structure and etched through to the channel protection layer above the gate to separate the source/drain metal layer into source and drain terminals and the source/drain metal layer and the semiconducting metal oxide are etched through at the periphery to isolate the transistor. A nonconductive spacer is patterned on the transistor and portions of the surrounding source/drain metal layer. | 05-05-2011 |
| 20110147761 | TWO-TERMINAL SWITCHING DEVICES AND THEIR METHODS OF FABRICATION - Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotating element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points. | 06-23-2011 |
