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Galy
Jean Galy, Arachon FR
| Patent application number | Description | Published |
|---|---|---|
| 20110180977 | PROCESS FOR PREPARING A SILICON CARBIDE PART WITHOUT THE NEED FOR ANY SINTERING ADDITIVES - The invention relates to a process for preparation of a part comprising silicon carbide with an average nanometric grain size and a relative density of more than 97%, said process comprising: | 07-28-2011 |
Julien Galy, Carbonne FR
| Patent application number | Description | Published |
|---|---|---|
| 20090056742 | Process for Decontaminating an Organic Solid Substrate Contaminated by Solid Radioactive Particulate Inorganic Contaminants, Using Dense Pressurized CO2 - Process for decontaminating, cleaning a solid organic substrate contaminated by solid radioactive particulate inorganic contaminants, in which: | 03-05-2009 |
Laurent Galy, Saint Paul Sur Save FR
| Patent application number | Description | Published |
|---|---|---|
| 20080214188 | Aircraft Data Transmission System for Transmitting Data Between an Aircraft and a Transmission Station Located Outside Thereof - The invention relates to an aircraft data transmission system for transmitting data between the aircraft and a transmission station located outside thereof. The inventive system consists of a transmitting/receiving device ( | 09-04-2008 |
Philippe Galy, Le Touvet FR
| Patent application number | Description | Published |
|---|---|---|
| 20100271740 | INTEGRATED CIRCUIT PROVIDED WITH A LARGE AREA PROTECTION AGAINST ELECTROSTATIC DISCHARGES - An integrated circuit protected against electrostatic discharges, including: first and second supply rails; first and second intermediary rails normally connected to the first and second supply rails; inverters formed of a P-channel MOS transistor series-connected to an N-channel MOS transistor, the sources of the P-channel and N-channel MOS transistors being respectively connected to the first and second supply rails and the bodies of the P-channel and N-channel transistors being respectively connected to the first and second intermediary rails; a positive overvoltage detector between the first and second supply rails; and a switch for connecting the first and second intermediary rails to the second and first supply rails when a positive overvoltage is detected. | 10-28-2010 |
| 20100271741 | STRUCTURE FOR PROTECTING AN INTEGRATED CIRCUIT AGAINST ELECTROSTATIC DISCHARGES - A structure for protecting an integrated circuit against electrostatic discharges, comprising an assembly of identical cells, each of which is connected to a terminal forming a pad of the circuit, a first supply rail, or a second supply rail, the cells forming between any two of said terminals an assembly of four alternated layers of different conductivity types. | 10-28-2010 |
| 20110042747 | STRUCTURE FOR PROTECTING AN INTEGRATED CIRCUIT AGAINST ELECTROSTATIC DISCHARGES - A structure for protecting an integrated circuit against electrostatic discharges, including a device for removing overvoltages between first and second power supply rails; and a protection cell connected to a pad of the circuit including a diode having an electrode, connected to a region of a first conductivity type, connected to the second power supply rail and having an electrode, connected to a region of a second conductivity type, connected to the pad and, in parallel with the diode, a thyristor having an electrode, connected to a region of the first conductivity type, connected to the pad and having a gate, connected to a region of the second conductivity type, connected to the first rail, the first and second conductivity types being such that, in normal operation, when the circuit is powered, the diode is non-conductive. | 02-24-2011 |
Philippe Galy, Colombes FR
| Patent application number | Description | Published |
|---|---|---|
| 20100027174 | CIRCUIT FOR PROTECTING AN INTEGRATED CIRCUIT AGAINST ELECTROSTATIC DISCHARGES IN CMOS TECHNOLOGY - The integrated circuit may include at least one electronic protection circuit for protecting against at least one electrostatic discharge and being able to discharge the overvoltage current generated by the electrostatic discharge. The electronic protection circuit includes a controlled short-circuiting switch embodied in CMOS technology including a CMOS technology TRIAC or a CMOS technology thyristor arranged in anti-parallel with a CMOS technology diode, and a triggering circuit for controlling the short-circuiting switch. | 02-04-2010 |
Philippe Galy, Lumbin FR
| Patent application number | Description | Published |
|---|---|---|
| 20080218919 | PROTECTION OF INTEGRATED ELECTRONIC CIRCUITS FROM ELECTROSTATIC DISCHARGE - Circuit nodes are identified which, in unpowered mode, can be charged with positive or negative charges but cannot be discharged. Then protective elements are added to allow the discharge of these nodes. These elements do not affect the operation of the circuit in powered mode. Discharges of the two polarities are handled, positive and negative. The circuit is thus more resistant to ESD and passes CDM tests. | 09-11-2008 |