| Patent application number | Description | Published |
|---|
| 20080224254 | Glass-based SOI structures - Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 10 | 09-18-2008 |
| 20090050901 | GLASS-CERAMIC-BASED SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND METHOD FOR MAKING THE SAME - The present invention relates to a semiconductor-on-insulator structure including a semiconductor component comprised of substantially single-crystal semiconductor material layer and a single-crystal semiconductor material with an enhanced oxygen content layer; an oxide glass material layer; and a glass-ceramic layer. | 02-26-2009 |
| 20090085176 | GLASS-BASED SOI STRUCTURES - Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer ( | 04-02-2009 |
| 20100099237 | FLEXIBLE DISPLAY SUBSTRATES - Processes for transferring a semiconductor material to a polymer substrate to provide flexible semiconductor material include implanting ions to a predetermined depth in a semiconductor substrate, heat-treating the ion-implanted semiconductor substrate for a period of time and at a temperature effective to cause defect formation and enlargement of the implanted ion defect, adhering the ion-implanted, heat-treated substrate to a polymer substrate, and separating a semiconductor film such as a single crystal silicon film from the semiconductor substrate; and devices having single crystal silicon films disposed directly or indirectly on polymer films. | 04-22-2010 |
| 20100213582 | GLASS-BASED SOI STRUCTURES - Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer ( | 08-26-2010 |
| Patent application number | Description | Published |
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| 20100224954 | SUBSTRATE COMPOSITIONS AND METHODS FOR FORMING SEMICONDUCTOR ON INSULATOR DEVICES - Methods and apparatus for producing a semiconductor on insulator structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis, wherein a liquidus viscosity of the glass substrate is about 100,000 Poise or greater. | 09-09-2010 |
| 20100239479 | Process For Removing Toxic Metals From A Fluid Stream - A process for removing at least one of As, Cd, Hg and Se from a fluid stream, comprising: (I) providing a plurality of Group A particles of a Group A sorbent material, said Group A sorbent material comprising: an activated carbon matrix defining a plurality of pores; sulfur; and an additive adapted for promoting the removal of at least one of As, Cd, Hg and Se from a fluid stream, wherein the additive is distributed throughout the activated carbon matrix; and (II) contacting the fluid stream with a plurality of Group A particles of the Group A sorbent material. The process can involve powder injection, a packed sorbent bed, a fluidized sorbent bed, and combinations thereof. | 09-23-2010 |
| 20110020202 | SORBENT BODIES COMPRISING ACTIVATED CARBON, PROCESSES FOR MAKING THEM, AND THEIR USE - Sorbent bodies comprising activated carbon, processes for making them, and methods of using them. The sorbent bodies can be used to remove toxic elements from a fluid, such as from a gas stream. For instance, the sorbent bodies may be used to remove elemental mercury or mercury in an oxidized state from a coal combustion flue gas. | 01-27-2011 |
| 20110070493 | CURRENT COLLECTORS HAVING TEXTURED COATING - A current collector and an electric double layer capacitor including a current collector. The current collector has a conductive layer with an electrode-facing surface and an opposing second surface, each surface having an area, and a textured coating formed over and in contact with at least a majority of the electrode-facing surface. | 03-24-2011 |
