| Patent application number | Description | Published |
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| 20100085995 | Transistor laser devices and methods - A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region. | 04-08-2010 |
| 20100103971 | Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits - A method for producing wide bandwidth laser emission responsive to high frequency electrical input signals, including the following steps: providing a heterojunction bipolar transistor device having collector, base, and emitter regions; providing at least one quantum size region in the base region, and enclosing at least a portion of the base region in an optical resonant cavity; coupling electrical signals, including the high frequency electrical input signals, with respect to the collector, base and emitter region, to cause laser emission from the transistor device; and reducing the operating beta of the transistor laser device to enhance the optical bandwidth of the laser emission in response to the high frequency electrical signals. | 04-29-2010 |
| 20100202483 | Two terminal light emitting and lasing devices and methods - A method for producing light emission from a semiconductor structure, including the following steps: providing a semiconductor structure that includes a first semiconductor junction between an emitter region of a first conductivity type and a base region of a second conductivity type opposite to that of the first conductivity type, and a second semiconductor junction between the base region and a drain region; providing, within the base region, a region exhibiting quantum size effects; providing an emitter electrode coupled with the emitter region; providing a base/drain electrode coupled with the base region and the drain region; and applying signals with respect to the emitter and base/drain electrodes to obtain light emission from the semiconductor structure. | 08-12-2010 |
| 20100202484 | Light emitting and lasing semiconductor devices and methods - A semiconductor light emitting device, including: a heterojunction bipolar light-emitting transistor having a base region between emitter and collector regions; emitter, base, and collector electrodes for coupling electrical signals with the emitter, base, and collector regions, respectively; and a quantum size region in the base region; the base region including a first base sub-region on the emitter side of the quantum size region, and a second base sub-region on the collector side of the quantum size region; and the first and second base sub-regions having asymmetrical band structures. | 08-12-2010 |
| 20100272140 | High speed light emitting semiconductor methods and devices - A method for producing a high frequency optical signal component representative of a high frequency electrical input signal component, includes the following steps: providing a semiconductor transistor structure that includes a base region of a first semiconductor type between semiconductor emitter and collector regions of a second semiconductor type; providing, in the base region, at least one region exhibiting quantum size effects; providing emitter, base, and collector electrodes respectively coupled with the emitter, base, and collector regions; applying electrical signals, including the high frequency electrical signal component, with respect to the emitter, base, and collector electrodes to produce output spontaneous light emission from the base region, aided by the quantum size region, the output spontaneous light emission including the high frequency optical signal component representative of the high frequency electrical signal component; providing an optical cavity for the light emission in the region between the base and emitter electrodes; and scaling the lateral dimensions of the optical cavity to control the speed of light emission response to the high frequency electrical signal component. | 10-28-2010 |
| 20100289427 | Light emitting and lasing semiconductor methods and devices - A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween. | 11-18-2010 |
| 20110150487 | High speed communication - The disclosure has application for use in establishing a communication link between a first location and a second location, the first location having an electrical driver circuit that receives input data to be communicated, and the second location having an electrical receiver circuit for producing output data representative of the input data. The method includes the following steps: providing a tilted charge light emitting device at the first location and coupled with the driver circuit such that the light produced by the tilted charge light-emitting device is a function of the input data; providing an optical fiber between the first and second locations; coupling light from the tilted charge light emitting device into the optical fiber; and providing, at the second location, a photodetector coupled with the optical fiber and with the receiver circuit; whereby electrical signals representative of the input data are output from the receiver circuit. | 06-23-2011 |
| Patent application number | Description | Published |
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| 20080240173 | Method for controlling operation of light emitting transistors and laser transistors - A method for controlling operation of a transistor includes the following steps: providing a bipolar transistor having emitter, base and collector regions; applying electrical signals to the transistor to produce light emission from the transistor; effecting photon-assisted tunneling of carriers in the transistor with self-generated photons of the light emission, and controlling operation of the transistor by controlling the photon-assisted tunneling. | 10-02-2008 |
| 20090115346 | PNP light emitting transistor and method - A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an emitter contact coupled with the second tunnel junction, and a base contact coupled with the base; whereby, signals applied with respect to the collector, base, and emitter contacts causes light emission from the base by radiative recombination in the base. | 05-07-2009 |
| 20100034228 | Light emitting and lasing semiconductor devices and methods - A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects; an emitter terminal and a collector terminal respectively coupled with the emitter region and the collector region; whereby application of the electrical signals with respect to the emitter and collector terminals, causes light emission from the base region. Application of the electrical signals is operative to reverse bias the tunnel junction. Holes generated at the tunnel junction recombine in the base region with electrons flowing into the base region, resulting in the light emission. The region exhibiting quantum size effects is operative to aid recombination. | 02-11-2010 |
| 20110164639 | Light emitting and lasing semiconductor devices and methods - A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects; an emitter terminal and a collector terminal respectively coupled with the emitter region and the collector region; whereby application of the electrical signals with respect to the emitter and collector terminals, causes light emission from the base region. Application of the electrical signals is operative to reverse bias the tunnel junction. Holes generated at the tunnel junction recombine in the base region with electrons flowing into the base region, resulting in the light emission. The region exhibiting quantum size effects is operative to aid recombination. | 07-07-2011 |
| 20120038243 | HIGH EFFICIENCY 4-PI NEGATRON BETA-3 PARTICLE EMISSION SOURCE FABRICATION AND ITS USE AS AN ELECTRODE IN A SELF-CHARGED HIGH-VOLTAGE CAPACITOR - The present invention is directed to an encapsulated β | 02-16-2012 |
