| Patent application number | Description | Published |
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| 20080246082 | Trenched mosfets with embedded schottky in the same cell - A semiconductor power device includes trenched semiconductor power device comprising a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an insulation layer covering the trenched semiconductor power device with a source-body contact trench opened therethrough the source and body regions and extending into an epitaxial layer below the body regions and filled with contact metal plug therein. The semiconductor power device further includes an embedded Schottky diode disposed near a bottom of the source-body contact trench below the contact metal plug wherein the Schottky diode further includes a Schottky barrier layer having a barrier height for reducing a leakage current through the embedded Schottky diode during a reverse bias between the drain and the source. | 10-09-2008 |
| 20080258224 | Trenched MOSFETs with improved gate-drain (GD) clamp diodes - A MOSFET device that includes a first Zener diode connected between a gate metal and a drain metal of said semiconductor power device for functioning as a gate-drain (GD) clamp diode. The GD clamp diode includes multiple back-to-back doped regions in a polysilicon layer doped with dopant ions of a first conductivity type next to a second conductivity type disposed on an insulation layer above the MOSFET device, having an avalanche voltage lower than a source/drain avalanche voltage of the MOSFET device wherein the Zener diode is insulated from a doped region of the MOSFET device for preventing a channeling effect. The MOSFET device further includes a second Zener diode connected between a gate metal and a source metal of the MOSFET device for functioning as a gate-source (GS) clamp diode, wherein the GD clamp diode includes multiple back-to-back doped regions in the polysilicon layer doped with dopant ions of a first conductivity type next to a second conductivity type disposed on the insulation layer above the MOSFET device having a lower breakdown voltage than a gate oxide rupture voltage of the MOSFET device. | 10-23-2008 |
| 20080283956 | PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION - A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches in the termination region. The second plurality of trenches are with the dielectric material. | 11-20-2008 |
| 20080290442 | PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION - A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches in the termination region. The second plurality of trenches are with the dielectric material. | 11-27-2008 |
| 20080303081 | Device configuration and method to manufacture trench mosfet with solderable front metal - A vertical semiconductor power device includes a plurality of semiconductor power cells connected to a bottom electric terminal disposed on a bottom surface of a semiconductor substrate and at least a top electrical terminal disposed on a top surface of the substrate and connected to the semiconductor power cells. The top electrical terminal further includes a solderable front metal for soldering to a conductor for providing an electric connection therefrom. In an exemplary embodiment, the conductor soldering to the solderable front metal includes a conductor of a high-heat-conductivity metal plate. In another exemplary embodiment, the conductor soldering to the solderable front metal includes a copper plate. In another exemplary embodiment, the solderable front metal includes a Ti/Ni/Au front metal. In another exemplary embodiment, the solderable front metal includes a Ti/Ni/Ag front metal. | 12-11-2008 |
| 20080315327 | TUNGSTEN PLUG DRAIN EXTENSION - A power metal-oxide-semiconductor field effect transistor (MOSFET) cell includes a semiconductor substrate. A first electrode is disposed on the semiconductor substrate. A voltage sustaining layer is formed on the semiconductor substrate. A highly doped active zone of a first conductivity type is formed in the voltage sustaining layer opposite the semiconductor substrate. The highly doped active zone has a central aperture and a channel region that is generally centrally located within the central aperture. A terminal region of the second conductivity type is disposed in the voltage sustaining layer proximate the highly doped active zone. The terminal region has a central aperture with an opening dimension generally greater than an opening dimension of the central aperture of the highly doped zone. An extension region is disposed in the voltage sustaining region within the central aperture of the highly doped active zone. | 12-25-2008 |
| 20090026533 | Trench MOSFET with multiple P-bodies for ruggedness and on-resistance improvements - A vertical semiconductor power device includes a plurality of semiconductor power cells having a drain disposed at a bottom of a semiconductor substrate. Each of the cells includes a gate surrounded by a body region encompassing a source region. The body region further includes multiple body-dopant implanted regions having a non-Gaussian distribution dopant profile for reducing a width of a transition region transitioning between the multiple body-dopant implanted regions and an epitaxial region underneath having a different conductivity type from the multiple body-dopant implanted regions. | 01-29-2009 |
| 20090085107 | Trench MOSFET with thick bottom oxide tub - A semiconductor power device includes a plurality of trenched gates. The trenched gates include a thin dielectric layer padded sidewalls of the trenched gate and a tub-shaped thick dielectric layer below a bottom of the trenched gates having a width narrower than the trenched gate. In an exemplary embodiment, the tub-shaped thick dielectric layer below a bottom of the trenched gates further includes a local deposition of silicon oxide (LOCOS) filling in a tub-shaped trench having a narrower width than the trenched gate. In another exemplary embodiment, the tub-shaped thick dielectric layer below a bottom of the trenched gates further comprising a high density plasma (HDP) chemical vapor deposition (CVD) silicon oxide filled in a tub-shaped trench having a narrower width than the trenched gate. | 04-02-2009 |
| 20090108338 | Trench MOSFET with implanted drift region - A method to manufacture a trenched semiconductor power device including a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. The method for manufacturing the trenched semiconductor power device includes a step of carrying out a tilt-angle implantation through sidewalls of trenches to form drift regions surrounding the trenches at a lower portion of the body regions with higher doping concentration than the epi layer for Rds reduction, and preventing a degraded breakdown voltage due to a thick oxide in lower portion of trench sidewall and bottom. In an exemplary embodiment, the step of carrying out the tilt-angle implantation through the sidewalls of the trenches further includes a step of carrying out a tilt angle implantation with a tilt-angle ranging between 4 to 30 degrees. | 04-30-2009 |
| 20090206395 | Trench mosfet with double epitaxial structure - A trenched semiconductor power device includes a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. The trenched semiconductor power device further includes a first epitaxial layer above heavily doped substrate and beyond the trench bottom and a second epitaxial layer above said first epitaxial layer wherein a resistivity N | 08-20-2009 |
| 20090219657 | Trenched mosfets with improved gate-drain (GD) clamp diodes - A method for operating a semiconductor power device by in a forward conducting mode instead of an avalanche mode during a voltage fly-back during an inductive switch operation for absorbing a transient energy with less stress. The method includes a step of clamping the semiconductor power device with a Zener diode connected between a gate metal and a drain metal of the semiconductor power device to function as a gate-drain (GD) clamp diode with the GD clamp diode having an avalanche voltage lower than a source/drain avalanche voltage of the semiconductor power device whereby as the voltage fly-back inducing a drain voltage increase rapidly reaching the avalanche voltage of the GD clamp diode for generating the forward conducting mode. | 09-03-2009 |
| 20090294859 | Trench MOSFET with embedded junction barrier Schottky diode - A trenched semiconductor power device that includes a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. Each of the body regions extended between two adjacent trenched gates further having a gap exposing a top surface above an epitaxial layer above said semiconductor substrate. The trenched semiconductor power device further includes a Schottky junction barrier layer covering the top surface above the epitaxial layer between the trenched gate thus forming embedded Schottky diodes between adjacent trenched gates. | 12-03-2009 |
| 20100044796 | Depletion mode trench MOSFET for improved efficiency of DC/DC converter applications - A DC-to-DC converter includes a high-side transistor and a low-side transistor wherein the high-side transistor is implemented with a high-side enhancement mode MOSFET. The low side-transistor further includes a low-side enhancement MOSFET shunted with a depletion mode transistor having a gate shorted to a source of the low-side enhancement mode MOSFET. A current transmitting in the DC-to-DC converter within a time-period between T | 02-25-2010 |
| 20100087039 | Methods for manufacturing trench MOSFET with implanted drift region - A method to manufacture a trenched semiconductor power device including a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. The method for manufacturing the trenched semiconductor power device includes a step of carrying out a tilt-angle implantation through sidewalls of trenches to form drift regions surrounding the trenches at a lower portion of the body regions with higher doping concentration than the epi layer for Rds reduction, and preventing a degraded breakdown voltage due to a thick oxide in lower portion of trench sidewall and bottom. In an exemplary embodiment, the step of carrying out the tilt-angle implantation through the sidewalls of the trenches further includes a step of carrying out a tilt angle implantation with a tilt-angle ranging between 4 to 30 degrees. | 04-08-2010 |
| 20100163975 | Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures - A trenched semiconductor power device includes a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. The trenched semiconductor power device further comprises tilt-angle implanted body dopant regions surrounding a lower portion of trench sidewalls for reducing a gate-to-drain coupling charges Qgd between the trenched gates and a drain disposed at a bottom of the semiconductor substrate. The trenched semiconductor power device further includes a source dopant region disposed below a bottom surface of the trenched gates for functioning as a current path between the drain to the source for preventing a resistance increase caused by the body dopant regions surrounding the lower portions of the trench sidewalls. | 07-01-2010 |
| 20100193835 | Trench insulated gate bipolar transistor (GBT) with improved emitter-base contacts and metal schemes - A trench insulation gate bipolar transistor (IGBT) power device includes a plurality of trench gates surrounded by emitter regions of a first conductivity type near a top surface of a semiconductor substrate encompassed in base regions of a second conductivity type and a collector layer disposed at a bottom surface of the semiconductor substrate. The trench IGBT power device further includes an insulation layer covering over the top surface over the trench gate and the emitter regions having emitter-base contact trenches opened therethrough between the trench gates and extending to the base regions and an emitter-base contact dopant region disposed in the base region of the second conductivity type surrounding a lower region of the contact trenches. The emitter-base contact dopant region is disposed at a distance away from a channel near the trench gates for reducing an emitter-base resistance without increasing a gate-emitter threshold voltage. | 08-05-2010 |
| 20100308370 | Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up - A trench insulation gate bipolar transistor (IGBT) power device with a monolithic deep body clamp diode comprising a plurality of trench gates surrounded by emitter regions of a first conductivity type near a top surface of a semiconductor substrate of the first conductivity type encompassed in base regions of a second conductivity type. The trench semiconductor power device further comprises a collector region of the second conductivity type disposed on a rear side opposite from the top surface of the semiconductor substrate corresponding to and underneath the trench gates surrounded by the emitter regions encompassed in the base regions constituting a plurality of insulation gate bipolar transistors (IGBTs). The IGBT power device further includes a deep dopant region of the second conductivity type having P-N junction depth deeper than the base region, disposed between and extending below the trench gates in the base region of the first conductivity type. The IGBT power device further includes a dopant region of the first conductivity type disposed on the rear side of the semiconductor substrate corresponding to and underneath the deep dopant region disposed between the trench gates thus constituting a plurality of deep body diodes. | 12-09-2010 |
