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Fuyutsume
Toshiyuki Fuyutsume, Kyoto JP
| Patent application number | Description | Published |
|---|---|---|
| 20100293770 | METHOD FOR MANUFACTURING ACOUSTIC WAVE DEVICE - Provided is a method for manufacturing an acoustic wave device that has an excellent temperature coefficient of frequency (TCF) and high accuracy of IDT pattern forming and is capable of resisting high temperature processing of 200 degrees or more. The method for manufacturing an acoustic wave device according to the present invention includes forming an IDT ( | 11-25-2010 |
| 20100301700 | ACOUSTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided are an acoustic wave device and a method for manufacturing the same, the acoustic wave device being effectively prevented from expanding and contracting due to temperature change and having a small frequency shift. The acoustic wave device of the present invention has a piezoelectric substrate ( | 12-02-2010 |
Toshiyuki Fuyutsume, Kanazawa-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090265904 | METHOD FOR MANUFACTURING BOUNDARY ACOUSTIC WAVE DEVICE - A method for manufacturing a boundary acoustic wave device prevents formation of discontinuous portions in a dielectric film without a significant decrease in the thickness of an IDT when the dielectric film is formed by deposition and without deterioration of electrical characteristics. The method includes the steps of forming an IDT on a piezoelectric substrate, forming a lower dielectric film so as to cover the IDT, conducting a planarizing step so as to smooth the rough surface of the lower dielectric film, and forming an upper dielectric film so as to cover the lower dielectric film of which the rough surface is smoothed. | 10-29-2009 |
Toshiyuki Fuyutsume, Moriyama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080290968 | BOUNDARY ACOUSTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A boundary acoustic wave device includes a first medium, a second medium, and an IDT electrode disposed at an interface between the first medium and the second medium, the IDT electrode having an Au layer defining a main electrode layer, wherein a Ni layer is laminated so as to contact at least one surface of the Au layer, and a portion of Ni defining the Ni layer is diffused from the Ni layer side surface of the Au layer toward the inside of the Au layer. | 11-27-2008 |