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Futatsuyama
Kouki Futatsuyama, Anjo-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080228046 | HEALTH CARE SUPPORT SYSTEM - The present invention provides a health care support system that can give appropriate advice depending on a situation. | 09-18-2008 |
Takuya Futatsuyama, Yokohama JP
| Patent application number | Description | Published |
|---|---|---|
| 20090052227 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR WRITING DATA THERETO - The present invention provides a method for writing data to a non-volatile memory device having first wirings and second wirings intersecting one another and memory cells arranged at each intersection therebetween, each of the memory cells having a variable resistive element and a rectifying element connected in series. According to the method, the second wirings are charged to a certain voltage not less than a rectifying-element threshold value, prior to a rise in a selected first wiring. Then, a selected first wiring is charged to a voltage required for writing or erasing, after which a selected second wiring is discharged. | 02-26-2009 |
| 20110103135 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR WRITING DATA THERETO - The present invention provides a method for writing data to a non-volatile memory device having first wirings and second wirings intersecting one another and memory cells arranged at each intersection therebetween, each of the memory cells having a variable resistive element and a rectifying element connected in series. According to the method, the second wirings are charged to a certain voltage not less than a rectifying-element threshold value, prior to a rise in a selected first wiring. Then, a selected first wiring is charged to a voltage required for writing or erasing, after which a selected second wiring is discharged. | 05-05-2011 |
Takuya Futatsuyama, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20110053373 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A first insulating film, a second insulating film, a first resist pattern is formed on a semiconductor substrate, the second insulating film is etched to form a second-insulating-film pattern, a third insulating film is deposited over the second-insulating-film pattern to form a third-insulating-film pattern, the first insulating film is etched to form a first-insulating-film pattern, a fourth insulating film and a second resist pattern is formed over the first-insulating-film pattern, fourth insulating film is etched to form a fourth-insulating-film pattern, a fifth insulating film is deposited over the fourth-insulating-film pattern to form a fifth-insulating-film pattern, line parts of first-insulating-film pattern is etched to form a first-insulating-film pattern for wiring, a wiring film is formed over the first-insulating-film pattern for wiring, the wiring film is removed until the first-insulating-film pattern for wiring is exposed to form a wiring pattern. | 03-03-2011 |
Takuya Futatsuyama, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080247231 | NAND FLASH MEMORY DEVICE - A NAND flash memory device includes: a memory cell array that includes a plurality of NAND memory cell units each including a connection element having a plurality of electrically-rewritable memory cells; a plurality of word lines that are connected to the plurality of memory cells; a plurality of bit lines that are connected to the plurality of memory cells; and a read-write control section that applies a voltage selectively to the plurality of word lines and the plurality of bit lines, wherein each of the plurality of NAND memory cell units includes a first select gate transistor and a second select gate transistor; and wherein the read-write control section sets an voltage level applied to word lines, so that the voltage level becomes lower than a predetermined voltage level applied to other word lines connected to control gate electrodes of memory cells. | 10-09-2008 |