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Futase
Katsunori Futase, Saitama JP
| Patent application number | Description | Published |
|---|---|---|
| 20110220272 | COUPLING STRUCTURE, COUPLING PROCESS AND COUPLING APPARATUS OF LAMINATE FILM - A coupled portion of mutual laminate films sufficiently contributes to the formation of a packaging bag in that the coupled portion itself has excellent air tightness and liquid tightness. The tensile strength required for the laminate film is given to the coupled portion, whereby a temporary stop of a packaging apparatus is useless when a connecting portion of the laminate film is passed through the apparatus, thereby enhancing the operation efficiency and improving the yield of the material. Oriented base film layers are joined in a mitre form at the coupled portion between a rear end portion and a front end portion of laminate films comprising oriented base film layers and sealant layers. | 09-15-2011 |
Takuya Futase, Fussa JP
| Patent application number | Description | Published |
|---|---|---|
| 20090011597 | MASS PRODUCTION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF ELECTRONIC DEVICE - In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film). | 01-08-2009 |
Takuya Futase, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20110237061 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - The present invention improves the performance of a semiconductor device wherein a metal silicide layer is formed through a salicide process. A metal silicide layer is formed over the surfaces of first and second gate electrodes, n | 09-29-2011 |