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Fuseya
Atsushi Fuseya, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090018264 | RESIN COMPOSITION - In order to provide a resin composition which contains a polymer having a furan ring and a layer silicate composition and is excellent in heat resistance and mechanical strength, the present invention provides a resin composition which contains a layer silicate composition and a polymer having a repeating unit represented by the following formula (1). | 01-15-2009 |
| 20110124839 | FLAME-RETARDANT POLYESTER COPOLYMER, AND PRODUCTION PROCESS AND MOLDED ARTICLE THEREOF - The invention provides a production process of a flame-retardant polyester copolymer, having a first step of adding a catalyst to a 2,5-furan dicarboxylic acid compound, an aliphatic or alicyclic diol, itaconic acid and 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide to obtain an oligomer, and a second step of adding a catalyst to the oligomer obtained in the first step to conduct polycondensation, thereby obtaining the flame-retardant polyester copolymer. | 05-26-2011 |
| 20110130498 | FLAME RETARDANT RESIN COMPOSITION AND MOLDED ARTICLE THEREOF - The invention provides a flame retardant resin composition containing a polyalkylene furan dicarboxylate represented by the following formula (1), an aromatic polycarbonate, a phosphazene compound represented by the following formula (2) and a fluorine-containing compound: | 06-02-2011 |
Ichiro Fuseya, Hyogo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090137823 | (E)-N-Monoalkyl-3-Oxo-3-(2-Thienyl) Propenamine and Process for Producing the Same and Process for Producing (E,Z)-N-Monoalkyl-3-Oxo-3-(2-Thienyl) Propenamine - The present invention provides a process for producing (E)-N-monoalkyl-3-oxo-3-(2-thienyl)propenamine represented by Formula (1); | 05-28-2009 |
Tomokatsu Fuseya, Odawara JP
| Patent application number | Description | Published |
|---|---|---|
| 20090066361 | Semiconductor integrated circuit device and storage apparatus having the same - A semiconductor integrated circuit device includes: a first large scale integrated circuit including a plurality of first logical blocks; a programmable second large scale integrated circuit connected the first large scale integrated circuit and including a second logical block; a memory storing data for achieving the purposes of the first logical blocks; and a control unit that, when a failure is detected in any of the first logical blocks during the operation of the first large scale integrated circuit, writes the data for the faulty first logical block stored in the memory to the second logical block, and uses the second logical block in place of the faulty first logical block. | 03-12-2009 |