Fusegawa
Izumi Fusegawa, Fukushima JP
Patent application number | Description | Published |
---|---|---|
20090232359 | METHOD FOR DETERMINING DISTANCE BETWEEN REFERENCE MEMBER AND MELT SURFACE, METHOD FOR CONTROLLING LOCATION OF MELT SURFACE USING THE SAME, AND APPARATUS FOR PRODUCING SILICON SINGLE CRYSTAL - The present invention is a method for determining a relative distance between a reference member placed above a melt surface and the melt surface upon pulling a silicon single crystal out of a raw material melt in a crucible by a CZ method characterized by at least: pulling the silicon single crystal applying a magnetic field; taking a picture of a real image of the reference member and a mirror image of the reference member reflected on the melt surface with a detector; processing the picture taken of the real image and the mirror image of the reference member as different pictures by separating the picture taken; and calculating the relative distance between the real image and the mirror image of the reference member from the processed pictures to determine the relative distance between the reference member and the melt surface. | 09-17-2009 |
20100126409 | Method of Manufacturing Single Crystal - This invention provides a process for producing a single crystal by a Chokralsky method in which a horizontal magnetic field is applied, characterized in that a single crystal is pulled up so that the radial magnetic field strength gradient ΔBr/ΔRc in such a direction that centers of magnetic field generation coils ( | 05-27-2010 |
20100139549 | Quartz Glass Crucible for Pulling Silicon Single Crystal and Method of Manufacturing Quartz Glass Crucible for Pulling Silicon Single Crystal - The present invention is a quartz glass crucible | 06-10-2010 |
Izumi Fusegawa, Nishishirakawa-Gun JP
Patent application number | Description | Published |
---|---|---|
20130174777 | QUARTZ GLASS CRUCIBLE, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL - Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a synthetic quartz glass material by the direct process or the soot process; processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and welding the synthetic quartz glass material processed into the crucible shape to the inner surface of the crucible base material. As a result, there are provided a quartz glass crucible that avoids generation of dislocation in a silicon single crystal, the generation of dislocation caused by the crucible itself, at the time of production of a silicon single crystal and has high heat resistance, a method for producing the quartz glass crucible, and a method for producing a silicon single crystal, the method using such a quartz glass crucible. | 07-11-2013 |
Izumi Fusegawa, Nishishirakawa JP
Patent application number | Description | Published |
---|---|---|
20140103492 | SILICON WAFER AND METHOD FOR PRODUCING THE SAME - The present invention provides a method for producing a silicon wafer from a defect-free silicon single crystal grown by a CZ method, the method comprising: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 μm or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which LPDs are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage. | 04-17-2014 |
Izumi Fusegawa, Nishigo-Mura JP
Patent application number | Description | Published |
---|---|---|
20140374861 | EPITAXIAL WAFER AND MANUFACTURING METHOD THEREOF - A method for manufacturing an epitaxial wafer for manufacture of an image pickup device, wherein, before the growth of the epitaxial layer, a thickness X of a region where oxygen concentration in the epitaxial layer becomes 4×10 | 12-25-2014 |
Shuichi Fusegawa, Kiryu-Shi JP
Patent application number | Description | Published |
---|---|---|
20090066183 | Motor, rotary electric machine and its stator, and method for manufacturing the stator - A laminated core segment | 03-12-2009 |
Yujiro Fusegawa, Kawasaki JP
Patent application number | Description | Published |
---|---|---|
20090138860 | PROGRAM ANALYSIS METHOD AMD APPARATUS - A program analysis method includes: analyzing, for each program, correlation between plural property values of properties including a property concerning a cost and the accumulated number of failures; calculating a failure forecast value for each program, based on the analysis result and the plural property values of the properties including the property concerning the cost; calculating a latent risk value for each program based on the accumulated number of failures, the failure forecast value, an assumed damage degree per one failure; and selecting a program to be processed based on the latent risk values. Thus, it becomes possible to identify a program for which the maintenance should be carried out, based on the latent risk. | 05-28-2009 |