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Furumura
Katsuya Furumura, Ageo-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090124493 | CATALYST FOR PURIFYING EXHAUST GAS AND METHOD FOR PRODUCING TETRAGONAL SYSTEM COMPOSITE OXIDE - The present invention provides an exhaust gas cleaning catalyst containing a tetragonal-system composite oxide which is produced through a neutralization coprecipitation-drying-firing method and which is represented by A | 05-14-2009 |
Yuji Furumura, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090102025 | Semiconductor device and method for manufacturing the same, dry-etching process, method for making electrical connections, and etching apparatus - A method for manufacturing a semiconductor device comprises dry-etching a thin film using a resist mask carrying patterns in which at least one of the width of each pattern and the space between neighboring two patterns ranges from 32 to 130 nm using a halogenated carbon-containing compound gas with the halogen being at least two members selected from the group consisting of F, I and Br. The ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio to transfer the patterns onto the thin film. Such etching of a thin film avoids causing damage to the resist mask used. The resulting thin film carrying the transferred patterns is used as a mask for subjecting the underlying material to dry-etching. | 04-23-2009 |
| 20100270654 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, DRY-ETCHING PROCESS, METHOD FOR MAKING ELECTRICAL CONNECTIONS, AND ETCHING APPARATUS - A method for manufacturing a semiconductor device comprises dry-etching a thin film using a resist mask carrying patterns in which at least one of the width of each pattern and the space between neighboring two patterns ranges from 32 to 130 nm using a halogenated carbon-containing compound gas with the halogen being at least two members selected from the group consisting of F, I and Br. The ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio to transfer the patterns onto the thin film. Such etching of a thin film avoids causing damage to the resist mask used. The resulting thin film carrying the transferred patterns is used as a mask for subjecting the underlying material to dry-etching. | 10-28-2010 |
Yuji Furumura, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20100090925 | METHOD FOR ADDING RF POWDER AND RF POWDER-ADDED BASE SHEET - A method is provided for adding an RF powder to a sheet-like object having a high property value, such as a variety of cards, paper money, and securities. The RF powder makes it very difficult to produce, for example, counterfeit cards, documents and bills. Also, an RF powder-added base sheet to which the RF powder has been added is provided. In the method for adding the RF powder, the RF powder includes a plurality of RF powder particles | 04-15-2010 |
| 20100134122 | Substrate, substrate holding apparatus, analysis apparatus, program, detection system, semiconductor device, display apparatus, and semiconductor manufacturing apparatus - A substrate including a sensor unit, wherein the sensor unit includes a coil wound at least once arranged on the surface of the sensor or embedded within and near the surface thereof. With such an arrangement, an electric current that corresponds to information with respect to the substrate flows through the coil. | 06-03-2010 |