| Patent application number | Description | Published |
|---|
| 20090093077 | METHOD OF MANUFACTURING GaN SUBSTRATE, METHOD OF MANUFACTURING EPITAXIALWAFER, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND EPITAXIALWAFER - Assuming that r (m) represents the radius of a GaN substrate, t | 04-09-2009 |
| 20090258452 | METHOD FOR FORMING QUANTUM WELL STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT - A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light emitting element are provided. In a step of forming a quantum well structure (active layer) by alternately growing barrier layers and well layers on a primary surface of a GaN substrate, the well layers are each formed by growing InGaN, the barrier layers are each grown at a first temperature, the well layers are each grown at a second temperature which is lower than that of the first temperature, and when the well layers are each formed, before a starting material gas for Ga (trimethylgallium) is supplied, a starting material gas for In is supplied. | 10-15-2009 |
| 20100013058 | Semiconductor Wafer and Semiconductor Wafer Inspection Method - Affords semiconductor wafers that achieve uniformization of semiconductor films. In a semiconductor wafer ( | 01-21-2010 |
| 20100224963 | COMPOUND SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND PROCESSES FOR PRODUCING THEM - A compound semiconductor substrate | 09-09-2010 |
| 20100260224 | GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND EPITAXIAL WAFER - A primary surface | 10-14-2010 |
| 20110079790 | GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND EPITAXIAL WAFER - A primary surface | 04-07-2011 |
| 20110084363 | Compound Semiconductor Substrate, Semiconductor Device, and Processes for Producing Them - A compound semiconductor substrate | 04-14-2011 |
| 20110108852 | GaN SUBSTRATE AND LIGHT-EMITTING DEVICE - The present GaN substrate can have an absorption coefficient not lower than 7 cm | 05-12-2011 |
| 20110163325 | METHOD OF MANUFACTURING GaN SUBSTRATE, METHOD OF MANUFACTURING EPITAXIALWAFER, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND EPITAXIALWAFER - Assuming that r (m) represents the radius of a GaN substrate, t | 07-07-2011 |
