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Fumitake Nakanishi

Fumitake Nakanishi, Osaka-Shi JP

Patent application numberDescriptionPublished
20100172390SURFACE-EMITTING LASER ELEMENT, FABRICATION METHOD THEREOF, SURFACE-EMITTING LASER ARRAY, AND FABRICATION METHOD THEREOF - A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a plurality of group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.07-08-2010

Fumitake Nakanishi, Hyogo JP

Patent application numberDescriptionPublished
20110236175PROCESSING METHOD AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE - There are obtained a processing method that allows adherence of foreign particles to an object to be processed in a load lock chamber to be suppressed, and a fabrication method of a semiconductor device using the processing method. The processing method includes the step of receiving a substrate that is the object to be processed at a load lock chamber (substrate load lock chamber) to load the substrate into a processing chamber where processing is to be applied to the substrate, and reducing internal pressure from a substrate load lock chamber 09-29-2011