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Fumika
Fumika Kuramae, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080217725 | SCHOTTKY DIODE STRUCTURE WITH MULTI-PORTIONED GUARD RING AND METHOD OF MANUFACTURE - In one embodiment, a semiconductor structure comprises a multi-portioned guard ring that includes a first portion and a second portion formed in a region of semiconductor material. A conductive contact layer forms a first Schottky barrier with the region of semiconductor material. The conductive contact layer overlaps the second portion and forms a second Schottky barrier that has an opposite polarity to the first Schottky barrier. The conductive contact layer does not overlap the first portion, which forms a pn junction with the region of semiconductor material. | 09-11-2008 |
Fumika Taguchi, Atsugi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110316057 | WIRING BOARD, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREOF - It is an object to reduce defective conduction in a wiring board or a semiconductor device whose integration degree is increased. It is another object to manufacture a highly reliable wiring board or semiconductor device with high yield. In a wiring board or a semiconductor device having a multilayer wiring structure, a conductive layer having a curved surface is used in connection between conductive layers used for the wirings. The top of a conductive layer in a lower layer exposed by removal of an insulating layer therearound has a curved surface, so that coverage of the conductive layer in the lower layer with a conductive layer in an upper layer stacked thereover can be favorable. A conductive layer is etched using a resist mask having a curved surface, so that a conductive layer having a curved surface is formed. | 12-29-2011 |
Fumika Taguchi, Atsagi JP
| Patent application number | Description | Published |
|---|---|---|
| 20120074407 | Semiconductor device and method for manufacturing the same - An object is to provide a semiconductor device having a novel structure in which a transistor including an oxide semiconductor and a transistor including a semiconductor material other than an oxide semiconductor are stacked. The semiconductor device includes a first transistor, an insulating layer over the first transistor, and a second transistor over the insulating layer. In the semiconductor device, the first transistor includes a first channel formation region, the second transistor includes a second channel formation region, the first channel formation region includes a semiconductor material different from a semiconductor material of the second channel formation region, and the insulating layer includes a surface whose root-mean-square surface roughness is less than or equal to 1 nm. | 03-29-2012 |
Fumika Yoshida, Hiratsuka-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100128747 | POLARIZATION PURITY CONTROL DEVICE AND GAS LASER APPARATUS PROVIDED WITH THE SAME - A degree of polarization control device includes: | 05-27-2010 |
| 20100200776 | EXTREME ULTRAVIOLET LIGHT SOURCE DEVICE - [Problem] An extreme ultraviolet light source device in accordance with the present invention suppresses a surface that comes into contact with a target material in a molten state from being eroded by the target material, being reacted with the target material, and being cut by the target material. | 08-12-2010 |
| 20110158281 | GAS DISCHARGE CHAMBER - A gas discharge chamber that uses a calcium fluoride crystal which reduces a breakage due to mechanical stress (window holder and laser gas pressure), thermal stress from light absorption, and the like, increases the degree of linear polarization of output laser, and suppresses degradation due to strong ultraviolet (ArF, in particular) laser light irradiation. A first window ( | 06-30-2011 |