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Fulford
Adam T. Fulford, Cambridge, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20120071792 | PHYSIOLOGICAL AND BEHAVIORAL SENSORS AND METHODS - In various embodiments, a physiological or behavioral signal is derived from a vertical force resulting from the entire weight of a subject. | 03-22-2012 |
Henry Jim Fulford, Meridian, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20110140204 | TRANSISTORS WITH AN EXTENSION REGION HAVING STRIPS OF DIFFERING CONDUCTIVITY TYPE AND METHODS OF FORMING THE SAME - Methods of forming transistors and transistors are disclosed, such as a transistor having a gate dielectric over a semiconductor having a first conductivity type, a control gate over the gate dielectric, source and drain regions having a second conductivity type in the semiconductor having the first conductivity type, and strips having the second conductivity type within the semiconductor having the first conductivity type and interposed between the control gate and at least one of the source and drain regions. | 06-16-2011 |
Howard Charles Fulford, Malmesbury GB
| Patent application number | Description | Published |
|---|---|---|
| 20100225197 | STATOR CORE - A stator core that includes a pair of poles separated by an air gap. Each pole includes a first side adjacent the air gap and a second opposite side remote from the air gap. A pole arc is formed in the first side and an arcuate mounting recess is formed in the second side of each pole. Additionally, an electric machine that includes the stator core. | 09-09-2010 |
Jim Fulford, Meridian, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20110227071 | Semiconductor Constructions, Semiconductor Processing Methods, And Methods Of Forming Isolation Structures - Some embodiments include methods of forming isolation structures. A semiconductor base may be provided to have a crystalline semiconductor material projection between a pair of openings. SOD material (such as, for example, polysilazane) may be flowed within said openings to fill the openings. After the openings are filled with the SOD material, one or more dopant species may be implanted into the projection to amorphize the crystalline semiconductor material within an upper portion of said projection. The SOD material may then be annealed at a temperature of at least about 400° C. to form isolation structures. Some embodiments include semiconductor constructions that include a semiconductor material base having a projection between a pair of openings. The projection may have an upper region over a lower region, with the upper region being at least 75% amorphous, and with the lower region being entirely crystalline. | 09-22-2011 |